Alpha & Omega Semiconductor Inc. AON6382
- Part No.:
- AON6382
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6382.pdf
- Description:
- MOSFET N-CHANNEL 30V 85A 8DFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,846
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AON6382 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET in DFN5x6 package, rated for 85A continuous drain current at VGS=10V, with RDS(ON) < 1.85mΩ and low gate charge (Qg=43–65nC), optimized for high-efficiency DC/DC converters in computing and telecom power supplies.
For engineers reviewing the AON6382 datasheet, pinout, applications, or equivalent options, key selection criteria include its 30V VDS, sub-2mΩ on-resistance at 10V drive, 100% UIS-tested ruggedness, DFN5x6 thermal performance, and suitability for synchronous rectification and high-current POL stages.
Technical Context
The AON6382 employs trench-gate silicon technology to achieve ultra-low RDS(ON) and fast switching with Qg(10V) = 43–65nC and Qgd = 6nC. Its body diode exhibits trr = 17ns and Qrr = 36nC under IF=20A/di/dt=500A/µs conditions, supporting efficient hard-switched and synchronous rectifier topologies.
Thermally, it features RθJC = 2.5°C/W and RθJA = 50°C/W (1in² FR-4, 2oz Cu), enabling >36W steady-state power dissipation at TC=100°C. Absolute maximum ratings include VDS=30V, VGS=±20V, and TJ=−55 to +150°C, with 100% Rg and UIS screening per unit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage compatible with 24V input rails and 3.3V/5V/12V output DC/DC stages. |
| ID (VGS=10V) | 85A - High current capability supports single-phase 50–80A point-of-load converters without paralleling. |
| RDS(ON) (VGS=10V) | <1.85mΩ - Minimizes conduction loss below 13.5W at 85A, critical for >95% efficiency at high load. |
| Qg (10V) | 43–65nC - Enables fast turn-on with low driver power demand, reducing gate drive losses in MHz-range operation. |
| tr/tf | 5ns/8ns - Supports clean edge control in hard-switched topologies with minimal overlap loss. |
| EAS | 32mJ - 100% unclamped inductive switching tested, ensuring robustness against transient overcurrent events. |
| RθJC | 2.5°C/W - Allows direct heatsink mounting for thermal management in compact, high-power-density modules. |
Pinout & Package
Package: DFN5x6 (5.0mm × 6.0mm × 0.75mm), exposed drain pad on bottom side for enhanced thermal conduction and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Internally connected to large copper pad; primary current path for high-side or low-side switching; requires full-solder thermal pad contact. |
| 5 | Gate (G) | Control terminal; low input capacitance (Ciss=3100pF) enables stable 3.3V/5V logic-level drive with minimal ringing. |
| 6 | Source (S) | Reference node for gate drive and current sensing; tied to power ground in low-side configurations or floating reference in high-side layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET technology | Delivers industry-leading RDS(ON) × Qg figure of merit for reduced total switching + conduction loss. |
| 100% UIS tested | Guarantees avalanche energy handling up to 32mJ per pulse, eliminating need for external snubbers in inductive loads. |
| Low gate charge (Qg) | Reduces gate driver power consumption and EMI generation, especially critical in multi-phase VRMs operating above 500kHz. |
| RoHS and halogen-free | Complies with IPC-1752A material declaration requirements for industrial and telecom equipment with extended lifecycle needs. |
| High current capability | Enables single-device replacement for dual-SO8 or paralleled SMT solutions, simplifying layout and reducing BOM count. |
Applications
| Server VRM Phase Legs | Telecom Isolated DC/DC Primary Switch |
|---|---|
Use Scenario: High-current, high-frequency buck converter in 1U server CPU voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000kHz with 3.3V gate drive. Use Value: Sub-2mΩ RDS(ON) cuts conduction loss by >40% vs. comparable 30V SO-8 MOSFETs, directly improving system efficiency and thermal margin. | Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for 48V telecom systems. IC Role / Device Role / Timing Role: High-side main switch with 30V VDS rating and 100% UIS screening for transformer leakage energy absorption. Use Value: 32mJ EAS rating eliminates need for external RCD clamp circuits, reducing component count and board area in space-constrained brick modules. |
| Industrial PLC Power Supplies | GPU Power Delivery Modules |
Use Scenario: Input-stage switch in wide-input (18–36V) industrial DC/DC converters powering programmable logic controllers. IC Role / Device Role / Timing Role: Input FET in non-isolated buck pre-regulator handling peak currents up to 80A. Use Value: DFN5x6 package with 2.5°C/W RθJC sustains full 85A rating at TC=100°C, enabling fanless operation in sealed enclosures. | Use Scenario: Multiphase high-current power stage in AI accelerator GPU boards requiring rapid transient response. IC Role / Device Role / Timing Role: Low-side switch in 6–12 phase interleaved buck converters driven by digital PWM controllers. Use Value: Fast 5ns rise time and low Qgd (6nC) minimize dead-time losses and improve current sharing accuracy across phases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | 30V, 70A, RDS(ON) = 2.2mΩ @10V, DFN5x6, Qg = 42nC | Lower current rating and higher on-resistance reduce efficiency in >60A POL stages. | Preferred where lower gate charge is prioritized over ultimate current density; suitable for cost-sensitive telecom SMPS. |
| SiR872DP-T1-GE3 | 30V, 90A, RDS(ON) = 1.6mΩ @10V, PowerPAK® 5x6, Qg = 72nC | Higher Qg increases driver loss and EMI risk above 1MHz; larger footprint than DFN. | Better for thermally constrained but lower-frequency (<500kHz) industrial supplies needing marginal RDS(ON) improvement. |
Compared with IRLHS6342TRPBF and SiR872DP-T1-GE3, the AON6382 delivers optimal balance of ultra-low RDS(ON), moderate Qg, and DFN5x6 thermal efficiency-making it the preferred choice for high-frequency, high-current computing and telecom DC/DC where both conduction and switching losses must be minimized simultaneously.
Availability
AON6382 is available at Aetrix Electronics and suitable for server VRM phase legs, telecom isolated DC/DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for AON6382 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON6382 belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in space- and thermally-constrained applications such as datacenter power supplies and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for the AON6382?
The AON6382 is rated for 85A continuous drain current at VGS = 10V and TC = 25°C. At elevated case temperatures, derating applies: 60A at TC = 100°C per Figure 13. This rating is package-limited and validated with 100% production testing, not calculated.
Does the AON6382 support 4.5V gate drive in logic-level applications?
Yes, the AON6382 is fully specified for 4.5V gate drive, with RDS(ON) < 2.5mΩ and guaranteed gate threshold voltage (VGS(th)) between 1.3V and 2.2V. It delivers 60A continuous current at VGS = 4.5V and TC = 25°C, making it suitable for 5V and 3.3V controller interfaces without level-shifting.
What thermal resistance values are specified for the AON6382 in DFN5x6 package?
The AON6382 specifies RθJC = 2.5°C/W (junction-to-case) and RθJA = 50°C/W (junction-to-ambient, measured on 1in² FR-4 with 2oz Cu). These values are validated per JEDEC standards and enable accurate thermal modeling for both heatsink-mounted and PCB-only cooling configurations.
Is the AON6382 suitable for synchronous rectification in DC/DC converters?
Yes, the AON6382 is explicitly designed for synchronous rectification, with low RDS(ON), fast body diode recovery (trr = 17ns, Qrr = 36nC), and low Qgd/Qgs ratio. Its DFN5x6 package provides low-inductance source connections critical for minimizing shoot-through risk in high-frequency synchronous buck stages.
What does "100% UIS tested" mean for the AON6382?
"100% UIS tested" means every AON6382 unit undergoes unclamped inductive switching stress at EAS = 32mJ (per pulse), verifying avalanche ruggedness without degradation. This ensures reliable operation during inductive turn-off transients in hard-switched topologies like forward or flyback converters, eliminating field failures due to voltage overshoot.
AON6382 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.85mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3100 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6382 FAQ
1.How can I place an order for AON6382 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6382 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6382 reliable?
The price and inventory of AON6382 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6382 is usually 5 days.
3.What payment methods are accepted for AON6382?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6382 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6382?
AON6382 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6382 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6382?
For technical support, including AON6382 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6382 requirements.
6.How does Aetrix verify that AON6382 is sourced from the original manufacturer or authorized distributors?
All AON6382 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6382 meets industry standards.
7.What is the process for return or replacement of AON6382?
All AON6382 units undergo pre-shipment inspection (PSI). If there is an issue with AON6382, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6382 part is unused and in its original packaging.
Return procedure for AON6382:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6382 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
