Alpha & Omega Semiconductor Inc. AON6384

Overview

AON6384 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET optimized for high-efficiency DC/DC conversion, featuring R_DS(ON) < 3.3 mΩ at V_GS = 10 V, 83 A continuous drain current, and low gate charge (Q_g = 20–35 nC). It serves as a primary synchronous rectifier or high-side switch in point-of-load (POL) regulators for servers and computing systems.

For engineers reviewing the AON6384 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC = 3.5 °C/W), 100% UIS-tested ruggedness, and validated body-diode recovery (t_rr = 11 ns, Q_rr = 17 nC) for hard-switched topologies.

Technical Context

The AON6384 employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive energy. Its gate threshold voltage (1.4–2.2 V typ.) enables compatibility with 3.3 V and 5 V logic-level controllers, while the low R_g (0.7–2.3 Ω) supports stable gate driving under high di/dt conditions.

Thermally, the device uses a copper-clip DFN5x6 package with exposed drain pad for direct PCB heat spreading. Absolute maximum ratings include V_DS = 30 V, T_J = –55 to 150 °C, and 100% avalanche-rated (E_AS = 20 mJ, L = 0.01 mH), confirming robustness in unclamped inductive switching events.

Key Specifications

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked by notch or dot; leads are non-leaded, solderable via bottom thermal pad and perimeter terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, the AON6384 offers the best balance of low R_DS(ON), ultra-low Q_g, and DFN5x6 thermal performance-making it optimal for compact, high-frequency POL designs where gate drive loss and layout density are critical.

Availability

AON6384 is available at Aetrix Electronics and suitable for server power supplies, GPU VRMs, and enterprise SSD power management requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for AON6384 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON6384 belongs to AOS's "NextGen Trench" MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in datacenter and AI hardware where thermal density and switching efficiency are paramount.

FAQ

What is the maximum continuous drain current for the AON6384 at 100°C case temperature?

The AON6384 supports 64 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its R_θJC = 3.5 °C/W and T_J(MAX) = 150 °C. At lower case temperatures, the AON6384 delivers up to 83 A (T_C = 25 °C), making it suitable for thermally constrained POL designs where the AON6384 maintains high current capability without forced airflow.

Does the AON6384 support 4.5 V gate drive in logic-level applications?

Yes, the AON6384 is fully characterized for 4.5 V gate drive: R_DS(ON) < 5.2 mΩ and Q_g(4.5 V) = 10–18 nC. Its V_GS(th) range (1.4–2.2 V) ensures strong enhancement at 4.5 V, enabling direct interface with 3.3 V and 5 V microcontrollers or PWM controllers without level-shifting. This makes the AON6384 ideal for compact, low-voltage gate-drive systems where the AON6384 replaces discrete driver stages.

How is the AON6384 qualified for unclamped inductive switching (UIS)?

The AON6384 undergoes 100% UIS testing per JEDEC JESD22-A110, with E_AS = 20 mJ at L = 0.01 mH and T_J = 25 °C. This qualification confirms ruggedness during freewheeling in synchronous buck converters when the low-side switch turns off before the high-side switch turns on. The AON6384's consistent UIS performance eliminates need for external snubbers in standard POL topologies.

What is the thermal resistance from junction to ambient (R_θJA) for the AON6384 on a standard PCB?

The AON6384 has R_θJA = 55 °C/W when mounted on a 1 in² FR-4 board with 2 oz. copper, measured in still air at T_A = 25 °C. This value assumes no additional heatsinking and defines the upper bound for natural-convection cooling. For thermally aggressive applications, the AON6384's R_θJC = 3.5 °C/W enables effective heat transfer to external copper planes or heatsinks-significantly improving real-world thermal headroom beyond the R_θJA limit.

Is the AON6384 pin-compatible with other DFN5x6 N-channel MOSFETs?

The AON6384 uses a standard DFN5x6 outline with 8-pin configuration (Drain–Drain–Drain–Drain–Source–Gate–Gate–Drain), matching industry-standard pinout for high-current DFN MOSFETs. While mechanical compatibility exists, electrical characteristics-including R_DS(ON), Q_g, and body diode recovery-must be verified per application. The AON6384's dual gate pins and exposed drain pad align with JEDEC MO-252, ensuring interoperability in layouts designed for similar DFN5x6 devices.