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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6414AL

Name: AON6414AL
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6414AL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6414AL

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-VDFN Exposed Pad

Datasheet:: AON6414AL.pdf

Description:: MOSFET N-CH 30V 13A/30A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6414AL from Alpha & Omega Semiconductor is a 30V, 30A N-channel Trench MOSFET in DFN5x6 package with R_DS(ON) < 8 mΩ at V_GS = 10 V and < 10.5 mΩ at V_GS = 4.5 V, featuring 100% UIS and R_g tested units, optimized for high-side switching in DC-DC converters and synchronous rectification.

For engineers reviewing the AON6414AL datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 20 nC typ), fast switching (t_f = 3.5 ns), robust avalanche rating (E_AS = 100 mJ), thermal performance (R_θJC = 4 °C/W), and DFN5x6 footprint compatibility with high-current PCB layouts.

Technical Context

The AON6414AL employs advanced trench-gate technology to achieve low R_DS(ON) and high current density while maintaining stable threshold voltage (V_GS(th) = 1.5–2.5 V) across temperature. Its gate resistance (R_g = 0.55–1.65 Ω) and low Crss (60–150 pF) support clean turn-off and reduced Miller-induced shoot-through risk in half-bridge configurations.

Designed for unclamped inductive switching (UIS) reliability, it delivers 100% tested avalanche energy (E_AS = 100 mJ at L = 0.05 mH) and supports pulsed drain currents up to 140 A. The device's body diode exhibits low forward voltage (V_SD = 0.72–1.0 V) and fast reverse recovery (t_rr = 7–10.5 ns, Q_rr = 11–16 nC), enabling efficient synchronous rectification in buck and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and 12 V rail switching.
I_D (V_GS=10 V)	30 A continuous - Supports high-current power stages without external heatsinking at TC ≤ 100 °C.
R_DS(ON) (V_GS=10 V)	< 8 mΩ - Reduces conduction loss to < 7.2 W at 30 A, critical for >95% efficiency in SMPS.
Q_g (10 V)	20 nC typical - Enables fast, low-loss switching with standard gate drivers (e.g., UCC27531).
R_θJC	4 °C/W - Allows direct thermal coupling to PCB copper or heatsink for sustained 31 W dissipation at T_C = 25 °C.
E_AS	100 mJ - Withstands repetitive inductive turn-off stress in motor drives and DC-DC without derating.
t_rr	7–10.5 ns - Minimizes body-diode conduction loss and EMI during dead-time transitions.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height), exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 8	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface.
5	Source (S)	Low-side reference node; connects to ground plane or low-side switch source in half-bridge.
6, 7	Gate (G)	Dual gate pads reduce gate loop inductance and improve switching stability at high dV/dt.

Key Features

Feature	Design Value
100% UIS tested	Guarantees avalanche ruggedness per JEDEC JESD22-A115, eliminating field failure risk in inductive loads.
Low R_DS(ON) at 4.5 V	< 10.5 mΩ enables full enhancement with 5 V logic-level gate drive, supporting USB PD and battery-powered systems.
Optimized gate charge profile	Q_gd/Q_g ratio of ~25% reduces Miller plateau duration and improves hard-switching immunity.
DFN5x6 thermally enhanced package	4 °C/W R_θJC allows 31 W continuous power at T_C = 25 °C-2.5× higher than SO-8 equivalents.
Fast body diode recovery	Q_rr = 13.5 nC typical minimizes reverse recovery loss and associated voltage overshoot in synchronous rectifiers.

Applications

Server VRM Power Stage	USB-C PD Fast Charger
Use Scenario: High-frequency (500 kHz–1 MHz), high-current (up to 60 A) buck converter delivering 3.3/5/12 V rails to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating in continuous conduction mode with precise gate timing control. Use Value: Low R_DS(ON) and Q_g reduce both conduction and switching losses, directly improving VRM efficiency by ≥0.8% at 40 A load versus SO-8 alternatives.	Use Scenario: Secondary-side synchronous rectification in 65–100 W GaN-based USB-C PD chargers with 30 V output capability. IC Role / Device Role / Timing Role: Output rectifier replacing Schottky diodes to minimize forward drop and thermal rise in compact 30 mm × 30 mm PCBs. Use Value: V_SD = 0.72 V and t_rr = 7 ns cut diode conduction loss by >60%, enabling 95.2% peak efficiency at 100 W without forced air cooling.
Industrial Motor Drive Inverter	Automotive DC-DC Converter
Use Scenario: Half-bridge leg in 24 V BLDC motor controllers driving fans, pumps, or actuators up to 500 W. IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive UIS events during PWM commutation and fault conditions. Use Value: 100% UIS-tested 100 mJ rating ensures reliable operation under short-circuit and stall conditions without snubber circuits.	Use Scenario: Step-down converter in automotive infotainment or ADAS modules converting 12 V battery to 3.3/5 V rails. IC Role / Device Role / Timing Role: Primary high-side switch operating at 250 kHz with 150 °C junction temperature requirement. Use Value: R_θJC = 4 °C/W and TJ range of –55 to 150 °C meet AEC-Q101 stress requirements and enable 10-year lifetime at 105 °C ambient.

Server VRM Power Stage

USB-C PD Fast Charger

Use Scenario: High-frequency (500 kHz–1 MHz), high-current (up to 60 A) buck converter delivering 3.3/5/12 V rails to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating in continuous conduction mode with precise gate timing control.

Use Value: Low R_DS(ON) and Q_g reduce both conduction and switching losses, directly improving VRM efficiency by ≥0.8% at 40 A load versus SO-8 alternatives.

Use Scenario: Secondary-side synchronous rectification in 65–100 W GaN-based USB-C PD chargers with 30 V output capability.

IC Role / Device Role / Timing Role: Output rectifier replacing Schottky diodes to minimize forward drop and thermal rise in compact 30 mm × 30 mm PCBs.

Use Value: V_SD = 0.72 V and t_rr = 7 ns cut diode conduction loss by >60%, enabling 95.2% peak efficiency at 100 W without forced air cooling.

Industrial Motor Drive Inverter

Automotive DC-DC Converter

Use Scenario: Half-bridge leg in 24 V BLDC motor controllers driving fans, pumps, or actuators up to 500 W.

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive UIS events during PWM commutation and fault conditions.

Use Value: 100% UIS-tested 100 mJ rating ensures reliable operation under short-circuit and stall conditions without snubber circuits.

Use Scenario: Step-down converter in automotive infotainment or ADAS modules converting 12 V battery to 3.3/5 V rails.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 250 kHz with 150 °C junction temperature requirement.

Use Value: R_θJC = 4 °C/W and TJ range of –55 to 150 °C meet AEC-Q101 stress requirements and enable 10-year lifetime at 105 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V (lower), but larger PG-TSDSON-8 (5×6 mm same footprint, different pinout), Q_g = 34 nC (higher)	Better conduction loss at high current, but slower switching and incompatible gate-source pin arrangement	Select when ultra-low R_DS(ON) dominates over switching speed and layout reuse is not required.
Vishay SiR626DP	R_DS(ON) = 7.5 mΩ @ 10 V (comparable), Q_g = 22 nC (similar), but PQFN 5×6 with single gate pad and no dual-G configuration	Same thermal performance, but lacks dual gate pads for high-dV/dt noise immunity in dense layouts	Prefer when cost sensitivity outweighs need for enhanced gate drive stability in high-noise environments.

Compared with BSC014N04LS6 and SiR626DP, the AON6414AL uniquely combines dual gate pads for EMI resilience, 100% UIS validation, and industry-leading Q_gd/Q_g ratio-making it optimal for high-reliability, high-frequency synchronous rectification where layout constraints and transient robustness are critical.

Availability

AON6414AL is available at Aetrix Electronics and suitable for server VRMs, USB-C PD chargers, industrial motor drives, and automotive DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AON6414AL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON6414AL belongs to AOS's "AlphaMOS" low-voltage logic-level MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification and high-side switching in space-constrained power supplies.

FAQ

What is the maximum continuous drain current rating for the AON6414AL at 100°C case temperature?

The AON6414AL supports 35 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is silicon-limited and validated under steady-state thermal conditions with proper PCB copper area. The AON6414AL maintains safe operation up to its 150 °C maximum junction temperature when mounted on a 1 in² FR-4 board with 2 oz copper.

Does the AON6414AL have a guaranteed avalanche energy rating, and how is it tested?

Yes, the AON6414AL has a guaranteed unclamped inductive switching (UIS) energy rating of 100 mJ at L = 0.05 mH, with 100% unit testing per JEDEC JESD22-A115. Each AON6414AL device undergoes individual avalanche stress screening during final test, ensuring every shipped unit meets this specification without statistical sampling.

Can the AON6414AL be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

No-the AON6414AL has a gate threshold voltage range of 1.5–2.5 V, but full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(ON) < 10.5 mΩ. Driving with only 3.3 V results in significantly higher on-resistance (>25 mΩ) and excessive conduction loss. A dedicated gate driver or level-shifting circuit is required for reliable operation of the AON6414AL.

What is the thermal resistance from junction to case (R_θJC) for the AON6414AL, and how does it impact heatsink design?

The AON6414AL has a measured R_θJC of 4 °C/W, verified using standardized JEDEC test conditions. This low value means that for a 31 W power dissipation at T_C = 25 °C, the junction temperature rises only 124 °C above case-enabling direct attachment to small aluminum heatsinks or thick copper planes. The AON6414AL's exposed drain pad must be soldered to ≥1 in² of 2 oz copper for rated performance.

Is the AON6414AL suitable for automotive applications, and does it meet AEC-Q101 qualification?

The AON6414AL is not AEC-Q101 qualified. While its absolute maximum ratings (–55 to 150 °C T_J) and UIS robustness align with automotive thermal and stress requirements, Alpha & Omega Semiconductor does not list AON6414AL on its AEC-Q101 qualified product roster. For automotive use, designers should select AOS's explicitly AEC-Q101-certified variants such as AON6254 or AON6260 instead of the AON6414AL.

AON6414AL Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6414AL FAQ

1.How can I place an order for AON6414AL through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6414AL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6414AL reliable?

The price and inventory of AON6414AL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6414AL is usually 5 days.

3.What payment methods are accepted for AON6414AL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6414AL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6414AL?

AON6414AL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6414AL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6414AL?

For technical support, including AON6414AL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6414AL requirements.

6.How does Aetrix verify that AON6414AL is sourced from the original manufacturer or authorized distributors?

All AON6414AL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6414AL meets industry standards.

7.What is the process for return or replacement of AON6414AL?

All AON6414AL units undergo pre-shipment inspection (PSI). If there is an issue with AON6414AL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6414AL part is unused and in its original packaging.

Return procedure for AON6414AL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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