Alpha & Omega Semiconductor Inc. AON6482

Overview

AON6482 from Alpha & Omega Semiconductor is a 100V N-Channel enhancement-mode trench MOSFET in DFN5x6 package, delivering R_DS(ON) < 37 mΩ at V_GS = 10 V and < 42 mΩ at V_GS = 4.5 V, with 28 A continuous drain current at T_C = 25°C. It is optimized for high-efficiency boost converters and synchronous rectifiers in consumer, telecom, and industrial power supplies.

For engineers reviewing the AON6482 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, low gate charge (Q_g = 34 nC typ at 10 V), 100% R_g tested gate resistance, body-diode reverse recovery performance (t_rr = 32 ns max), and thermal capability (R_θJC = 2°C/W).

Technical Context

The AON6482 employs advanced trench-gate silicon technology to achieve low on-resistance while maintaining fast switching speed and robust avalanche capability. Its DFN5x6 thermally enhanced package enables high-current operation with low junction-to-case thermal resistance.

It supports logic-level and standard gate drive (V_GS(th) = 1.6–2.7 V), features low output capacitance (C_oss = 100 pF max), and delivers stable R_DS(ON) over temperature (±20% variation from 25°C to 125°C). The device is rated for 175°C maximum junction temperature and 100% unclamped inductive switching (UIS) tested.

Key Specifications

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height, exposed drain pad). Thermally optimized for high-power density mounting with solderable bottom-side thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPP040N10N5 and SiR626DP, the AON6482 uniquely balances low R_DS(ON), industry-leading UIS validation, and DFN5x6 thermal performance-making it optimal for high-reliability, space-constrained 100 V power stages where both efficiency and ruggedness are mandatory.

Availability

AON6482 is available at Aetrix Electronics and suitable for boost converters, synchronous rectifiers, and telecom server PSUs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AON6482 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON6482 belongs to AOS's advanced trench MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion where low gate charge, rugged UIS performance, and thermally efficient packaging are essential.

FAQ

What is the maximum continuous drain current rating for the AON6482 at 100°C case temperature?

The AON6482 supports 20 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package and ensures safe operation under sustained high-temperature conditions without exceeding the 175°C maximum junction temperature. The AON6482 maintains stable R_DS(ON) performance across this range, making it suitable for enclosed industrial power supplies.

Does the AON6482 support 5 V gate drive in logic-level applications?

Yes, the AON6482 has a gate threshold voltage V_GS(th) of 1.6–2.7 V and delivers R_DS(ON) < 42 mΩ at V_GS = 4.5 V, enabling full enhancement with standard 5 V microcontrollers or PWM controllers. Its low Q_g (34 nC typ) and tested R_g ensure predictable turn-on behavior without external gate resistors in most 5 V-driven topologies. The AON6482 is widely used in such configurations across consumer adapter designs.

Is the AON6482 suitable for synchronous rectification in isolated DC-DC converters?

Yes, the AON6482 is explicitly recommended for synchronous rectification per its General Description. Its low R_DS(ON), fast body-diode recovery (t_rr = 32 ns max), and 100% UIS testing make it ideal for secondary-side switching in flyback, forward, and LLC converters. The AON6482 replaces Schottky diodes with measurable efficiency gains-especially at high output currents-while maintaining robustness against reverse recovery stress.

What is the thermal resistance from junction to ambient (R_θJA) for the AON6482 under standard test conditions?

The AON6482 has R_θJA = 50°C/W when mounted on a 1 in² FR-4 board with 2 oz. copper in still air (per JEDEC JESD51-2). This value assumes no external heatsink and defines the worst-case thermal path for layout estimation. For system-level thermal design, the AON6482's R_θJC = 2°C/W is more relevant when using a heatsink or thermal pad connection. The AON6482 datasheet provides normalized transient impedance curves for dynamic thermal modeling.

Are there any special PCB layout considerations for the AON6482's DFN5x6 package?

Yes-the AON6482's DFN5x6 package features an exposed drain pad that must be soldered to a large, thermally robust PCB copper area (minimum 200 mm² recommended) with multiple thermal vias to inner ground planes. Gate and source traces should be short and low-inductance to minimize ringing; gate resistor placement must be adjacent to the gate pin. The AON6482's performance and reliability depend critically on proper thermal pad implementation and controlled impedance routing.