Alpha & Omega Semiconductor Inc. AON6484

Overview

AON6484 from Alpha & Omega Semiconductor is a 100V N-Channel enhancement-mode trench MOSFET in a DFN5x6 package, rated for 12A continuous drain current at V_GS = 10V, with R_DS(ON) < 79 mΩ and 100% UIS tested. It serves as a high-efficiency power switch in synchronous rectification and boost converter stages for consumer, telecom, and industrial power supplies.

For engineers reviewing the AON6484 datasheet, pinout, applications, or equivalent options, key selection criteria include its low R_DS(ON) at 4.5V (≤90 mΩ), 100% R_g tested gate resistance (0.7–2.2 Ω), and robust avalanche energy rating (2.7 mJ) - critical for reliable operation in hard-switched DC-DC topologies.

Technical Context

The AON6484 employs advanced trench-gate silicon technology optimized for low conduction loss and fast switching. Its dynamic parameters include Q_g(10V) = 15–24 nC, Q_gd = 3–7 nC, and t_r/t_f = 2.5/2.4 ns, enabling high-frequency operation up to several hundred kHz in isolated and non-isolated converters.

Thermally, it features R_θJC = 3.5°C/W and R_θJA = 60°C/W (1-in² FR-4, 2 oz Cu), supporting power dissipation up to 25 W at T_A = 70°C. The device is characterized across –55°C to +150°C junction temperature range and includes 100% body-diode reverse recovery testing (Q_rr = 99–185 nC).

Key Specifications

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height), exposed drain pad on bottom side for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Compared with IPP050N10N5 and SiR626DP, the AON6484 delivers optimal balance of low R_DS(ON), compact DFN5x6 footprint, verified UIS robustness, and 4.5V drive capability - making it preferred for high-density, high-reliability 100V synchronous rectifier designs.

Availability

AON6484 is available at Aetrix Electronics and suitable for LED backlighting boost converters, telecom 48V DC-DC converters, and industrial AC-DC power supplies requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for AON6484 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for power conversion and motor control.

The AON6484 belongs to AOS's advanced trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current rating for the AON6484 at 100°C case temperature?

The AON6484 supports 7.5 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat transfer at elevated temperatures and must be validated against actual PCB layout and airflow conditions. The AON6484 datasheet provides de-rating curves confirming this value under steady-state conditions with proper heatsinking.

Does the AON6484 support gate drive from a 5V microcontroller without a level shifter?

Yes, the AON6484 is fully compatible with 5V gate drive: its R_DS(ON) is guaranteed ≤ 90 mΩ at V_GS = 4.5V, and gate threshold voltage is 1.6–2.7V. This allows direct interface with standard 5V logic outputs, eliminating external level-shifting circuitry. The AON6484's low Q_g(4.5V) = 7–12 nC further ensures fast, low-loss switching under 5V drive.

Is the AON6484 suitable for use in synchronous rectifier applications with reverse recovery stress?

Yes, the AON6484 is explicitly qualified for synchronous rectification: it features a fast, soft body diode with t_rr = 16–30 ns and Q_rr = 99–185 nC, and all units undergo 100% body-diode reverse recovery testing. These characteristics minimize commutation loss and voltage overshoot during freewheeling transitions - a key requirement confirmed in the AON6484 application notes for LLC and active-clamp converters.

What is the thermal resistance from junction to case (R_θJC) for the AON6484, and how is it measured?

The AON6484 has R_θJC = 3.5°C/W, measured with the device mounted to a large heatsink under controlled lab conditions per JEDEC JESD51-1. This value enables accurate thermal modeling when the exposed drain pad is soldered to a multi-layer PCB with internal copper planes or an external heatsink. The AON6484 datasheet specifies this parameter in Section 5, Thermal Characteristics.

How does the AON6484's 100% UIS testing benefit system-level reliability?

The AON6484's 100% unclamped inductive switching (UIS) testing guarantees each unit withstands ≥2.7 mJ of single-pulse avalanche energy. This eliminates field failures caused by transient overvoltage during inductor current interruption - especially critical in boost converters and motor drives where parasitic inductance cannot be fully suppressed. The AON6484's UIS rating is validated per JEDEC JESD24-1 and documented in its production test report.