Alpha & Omega Semiconductor Inc. AON6566

Overview

AON6566 from Alpha & Omega Semiconductor is a 30 V, 42 A, 3.8 mΩ N-channel MOSFET in a 5 mm × 6 mm DFN package with exposed drain pad, designed for high-efficiency DC-DC power conversion in server VRMs and POL converters.

For engineers reviewing the AON6566 datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 10 V and 4.5 V, thermal resistance (R_θJA), gate charge (Q_g), and compliance with halogen-free packaging requirements per AOS Green Policy.

Technical Context

The AON6566 uses Trench Power MOSFET technology to achieve low on-resistance and fast switching. It supports logic-level gate drive (V_GS(th) = 1.2–2.2 V) and features 100% EAS-rated ruggedness for reliable operation under inductive load conditions.

Its DFN5x6 package provides low thermal resistance (R_θJA = 40 °C/W, R_θJC = 1.5 °C/W) and enables high-current density layouts. The device is rated for continuous drain current up to 42 A at T_C = 25 °C and 27 A at T_C = 100 °C.

Key Specifications

Pinout & Package

DFN5x6-8L package with exposed drain pad (Pin 1–3: Source; Pin 4–8: Drain; Gate on Pin 5). Thermal pad must be soldered to PCB ground plane for rated current and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC028N06NS3 and SiR626DP, the AON6566 delivers optimal balance of low R_DS(on), low Q_g, and DFN5x6 thermal performance for space-constrained, high-frequency POL converters requiring halogen-free compliance.

Availability

AON6566 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and industrial PLC power rails requiring stable component supply, halogen-free compliance, and high-current density packaging.

Supply support for AON6566 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, telecom, and industrial markets.

The AON6566 belongs to AOS's DFN-5x6 logic-level MOSFET product line, engineered for high-efficiency, high-frequency DC-DC conversion in space- and thermally constrained applications.

FAQ

What is the maximum continuous drain current rating for the AON6566 at 100 °C case temperature?

The AON6566 is rated for 27 A continuous drain current at T_C = 100 °C, based on its R_DS(on) and thermal resistance (R_θJC = 1.5 °C/W). This rating assumes proper PCB copper area for the exposed drain pad and ambient airflow per JEDEC JESD51-2. Derating applies above 100 °C case temperature.

Does the AON6566 meet halogen-free requirements per AOS Green Policy?

Yes, the AON6566 is manufactured as a halogen-free part per AOS Green Policy: bromine and chlorine content are each below 900 ppm, and total halogens are below 1500 ppm. No "L" suffix is required, as all DFN5x6 devices shipped post-2010 are green-version by default.

What is the gate threshold voltage range for the AON6566, and how does it affect drive compatibility?

The AON6566 has a V_GS(th) range of 1.2–2.2 V, enabling reliable turn-on with standard 3.3 V or 5 V gate drivers. This logic-level characteristic eliminates the need for level-shifting circuitry in synchronous buck controllers such as TI UCC27282 or ON Semi NCP30215, simplifying design of the AON6566-based power stage.

Is the AON6566 suitable for use as a synchronous rectifier in a 12 V input buck converter?

Yes, the AON6566 is well-suited as a low-side synchronous rectifier in 12 V input buck converters. Its 5.2 mΩ R_DS(on) at 4.5 V gate drive ensures full enhancement with typical controller bootstrap outputs, and its enhanced body diode dV/dt immunity prevents false turn-on during high-speed switching transitions in the AON6566-based stage.

How does the AON6566's avalanche rating impact system reliability in hard-switched topologies?

The AON6566 is 100% EAS-rated to 125 mJ, meaning each unit is individually tested for avalanche energy capability. This guarantees robustness against voltage transients caused by transformer leakage in forward converters or parasitic inductance in high-di/dt layouts-critical for maintaining reliability in the AON6566's target applications without adding snubber networks.