Alpha & Omega Semiconductor Inc. AON6572

Overview

AON6572 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS (αMOS LV) MOSFET optimized for high-efficiency DC/DC conversion, delivering 85A continuous drain current at V_GS=10V, <3.2mΩ R_DS(ON) at 10V, and <3.9mΩ at 4.5V - enabling low conduction loss in POL and isolated telecom power stages.

For engineers reviewing the AON6572 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC = 2.6°C/W), 100% UIS-tested ruggedness, and gate charge profile (Q_g(10V) = 46.5–65nC) critical for synchronous buck and OR-ing designs.

Technical Context

The AON6572 employs trench-based αMOS LV process technology to achieve ultra-low R_DS(ON) and gate charge simultaneously, supporting high-frequency switching up to 1MHz in synchronous rectification. Its 30V V_DS rating and 1.2–2.0V gate threshold enable robust operation with 3.3V/5V logic-level drive.

Thermal design is enabled by the DFN5x6 package's exposed drain pad and low junction-to-case resistance (2.6°C/W), while 100% R_g testing ensures consistent gate drive timing across production lots. The device supports unclamped inductive switching (UIS) with E_AS = 48mJ and avalanche-rated current I_AS = 63.5A.

Key Specifications

Pinout & Package

Package: DFN5x6 (5mm × 6mm, 1.0mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked via top-side notch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPP036N04L and SiR872DP, the AON6572 delivers superior thermal efficiency in DFN5x6 form factor due to its 2.6°C/W R_θJC and 85A rating - making it optimal for high-power density 30V synchronous buck stages where board area and junction temperature are constrained.

Availability

AON6572 is available at Aetrix Electronics and suitable for server point-of-load (POL) converters, telecom isolated DC/DC modules, and industrial motor drive gate drivers requiring stable component supply and consistent parametric performance across production batches.

Supply support for AON6572 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6572 belongs to AOS' αMOS LV trench MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(ON), low gate charge, and rugged avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current for AON6572 at 100°C case temperature?

The AON6572 supports 44A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects package-limited current handling under steady-state thermal conditions and assumes proper PCB copper area for heat spreading. Derating curves in the datasheet confirm this rating aligns with the device's R_θJC = 2.6°C/W and maximum junction temperature of 150°C. Always verify actual board-level thermal performance using measured T_C in the target application before finalizing the AON6572 design-in.

Does AON6572 support 5V gate drive in synchronous buck applications?

Yes, the AON6572 is fully compatible with 5V gate drive: its R_DS(ON) is guaranteed at <3.9mΩ with V_GS = 4.5V, and gate threshold voltage ranges from 1.2V to 2.0V (typical 1.6V). This ensures strong enhancement and low conduction loss even with standard 5V PWM controllers. The low Q_g(4.5V) = 20.3–30nC further reduces gate drive power, making the AON6572 suitable for compact 5V-driven POL modules without external level shifters or gate drivers.

What is the body diode forward voltage of AON6572 and how does it affect OR-ing performance?

The AON6572 body diode forward voltage (V_SD) is 0.7–1.0V at I_S = 1A and T_J = 25°C, per Electrical Characteristics. In OR-ing applications, this low V_SD - combined with sub-4mΩ R_DS(ON) - significantly reduces conduction loss compared to Schottky diodes. For example, at 20A, the AON6572 dissipates ~1.4W versus ~3.2W for a typical 40V Schottky, directly lowering thermal load and improving system reliability in redundant power architectures using the AON6572.

Is AON6572 qualified for unclamped inductive switching (UIS)?

Yes, the AON6572 is 100% UIS tested per datasheet specification, with rated avalanche energy E_AS = 48mJ and avalanche current I_AS = 63.5A (L = 0.05mH). This qualification ensures robust operation during inductive turn-off transients in motor drives, relay drivers, and DC/DC converters without external protection components. The test condition matches industry-standard JEDEC JESD24-10, confirming the AON6572 can safely absorb stored inductive energy without parametric shift or failure - a critical requirement for industrial-grade power designs using the AON6572.

What is the thermal resistance from junction to ambient (R_θJA) for AON6572 on a standard PCB?

The AON6572 exhibits R_θJA = 50°C/W when mounted on a 1in² FR-4 board with 2oz copper in still air (per datasheet Note H). This value assumes no additional heatsinking and defines the upper bound for natural-convection cooling. For higher-power applications, the lower R_θJC = 2.6°C/W enables direct thermal coupling to heatsinks or copper planes, allowing the AON6572 to sustain >19W at T_C = 100°C. Always validate R_θJA in the final layout using thermal simulation or IR measurement before committing the AON6572 to production.