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Alpha & Omega Semiconductor Inc. AON6764
- Part No.:
- AON6764
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6764.pdf
- Description:
- MOSFET N-CHANNEL 30V 85A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,528
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Product details
Overview
AON6764 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power αMOS SRFET with integrated Schottky body diode, optimized for high-efficiency DC/DC converters in computing and isolated telecom/industrial power supplies. It delivers 85A continuous drain current at TC=25°C, <2.8mΩ RDS(ON) at VGS=10V, and low 0.9–2.7Ω gate resistance.
For engineers reviewing the AON6764 datasheet, pinout, applications, or equivalent options, key selection criteria include its soft-recovery diode performance (trr=15.5ns, Qrr=33nC), 100% UIS-tested ruggedness, and DFN5x6 package thermal capability (RθJC=3°C/W).
Technical Context
The AON6764 employs trench-based αMOS architecture to achieve ultra-low RDS(ON) and gate charge (Qg=37nC at 10V). Its integrated Schottky diode enables soft reverse recovery-critical for reducing switching losses and EMI in synchronous buck and LLC topologies.
Rated for 30V VDS and 85A ID (TC=25°C), it operates across –55°C to 150°C junction temperature with 100% Rg and UIS testing. Thermal design leverages low RθJC=3°C/W and supports high-current pulse operation up to 190A IDM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage compatible with 24V input bus systems and 12V intermediate bus architectures. |
| ID (TC=25°C) | 85A - Continuous current rating enabling single-device use in high-power point-of-load converters up to ~200W. |
| RDS(ON) @ VGS=10V | <2.8mΩ - Minimizes conduction loss below 24mW at 85A, critical for >95% efficiency targets. |
| Qg (10V) | 37nC - Low total gate charge reduces drive power and enables fast switching with standard gate drivers. |
| trr / Qrr | 15.5ns / 33nC - Soft-recovery body diode limits voltage overshoot and ringing during hard commutation. |
| RθJC | 3°C/W - Enables direct heatsink mounting for high-power density thermal management without PCB copper area dependency. |
| VGS(th) | 1.1–1.9V (typ) - Ensures reliable turn-on with 3.3V or 5V logic-level gate drive in controller-based designs. |
Pinout & Package
Package: DFN5x6 (5mm × 6mm, 1.0mm height), exposed thermal pad, RoHS and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8 | Drain (D) | High-current output node connected to internal MOSFET die and thermal pad; requires low-impedance PCB copper pour for heat dissipation. |
| 5 | Source (S) | Power return path for load current; forms common reference for gate drive and current sensing in high-side configurations. |
| 6, 7 | Gate (G) | Control input with low 0.9–2.7Ω gate resistance; dual-pin layout reduces inductance for stable high-frequency switching. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Body Diode | Enables soft reverse recovery (trr=15.5ns) to suppress voltage spikes and reduce EMI in synchronous rectification. |
| Trench Power αMOS Technology | Delivers <2.8mΩ RDS(ON) at 10V and <3.45mΩ at 4.5V-supporting efficient operation with 3.3V gate drive. |
| 100% UIS Tested | Guarantees unclamped inductive switching robustness up to 44mJ (L=0.05mH), eliminating need for external snubbers. |
| Low Gate Charge | Qg=37nC (10V) and Qg=16.8nC (4.5V) minimize driver losses and enable >1MHz switching in compact converters. |
| Thermal Performance | RθJC=3°C/W allows direct heatsink attachment, supporting >60W continuous power dissipation at TC=100°C. |
Applications
| Server VRMs | Telecom DC/DC Modules |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage (0.8–1.2V) from 12V input in datacenter servers. IC Role / Device Role: Synchronous high-side switch handling up to 85A per phase with minimal conduction loss. Use Value: <2.8mΩ RDS(ON) reduces I²R loss by >30% vs. comparable 30V MOSFETs, improving phase efficiency and thermal margin. | Use Scenario: Isolated half-bridge or active-clamp forward converters in 48V telecom power supplies delivering 12V/24V outputs. IC Role / Device Role: Primary-side switching FET with integrated soft-recovery diode for ZVS-assisted operation. Use Value: trr=15.5ns and Qrr=33nC enable clean turn-off with minimal voltage overshoot, reducing stress on primary-side capacitors and snubbers. |
| Industrial PLC Power Supplies | GPU Power Delivery |
Use Scenario: Non-isolated buck converters powering I/O modules and fieldbus interfaces in harsh industrial environments (–40°C to 85°C ambient). IC Role / Device Role: Main switching element rated for 100% UIS and operating across full industrial temperature range. Use Value: 100% UIS tested and –55°C to 150°C TJ rating ensure reliability under repetitive overload and transient conditions. | Use Scenario: Multi-phase VRMs on high-end graphics cards delivering >400A to GPU cores using 3.3V gate drive controllers. IC Role / Device Role: Logic-level N-channel FET with VGS(th) down to 1.1V, enabling full enhancement from 3.3V gate drivers. Use Value: RDS(ON) <3.45mΩ at VGS=4.5V ensures low conduction loss even with 3.3V drive, maintaining efficiency at high current density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N03L | 30V, 120A, RDS(ON)=2.6mΩ @10V, TO-252 package, no integrated Schottky diode. | Larger footprint and higher RθJA (60°C/W); lacks soft-recovery diode-requires external freewheeling diode for synchronous rectification. | Preferred where board space permits TO-252 and discrete diode integration is acceptable. |
| Vishay SiR626DP | 30V, 80A, RDS(ON)=2.9mΩ @10V, PowerPAK® SO-8, no integrated Schottky diode. | SO-8 package offers easier hand-soldering but higher RθJC (4.5°C/W); no body-diode optimization for soft recovery. | Suitable for lower-power (<150W) or cost-sensitive designs where trr/Qrr are less critical. |
Compared with IPP026N03L and SiR626DP, the AON6764 provides superior thermal performance (RθJC=3°C/W), integrated soft-recovery diode, and DFN5x6 footprint-enabling higher power density and reduced component count in high-frequency, high-current DC/DC converters.
Availability
AON6764 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial PLC power supplies requiring stable component supply and long-term production continuity.
Supply support for AON6764 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON6764 belongs to AOS's SRFET™ family-designed specifically for high-efficiency, high-frequency switching applications where integrated soft-recovery diodes and ultra-low RDS(ON) are essential.
FAQ
What is the maximum continuous drain current rating for the AON6764?
The AON6764 has a maximum continuous drain current of 85A at case temperature TC=25°C, derating to 20A at TC=100°C. This rating is package-limited and validated under steady-state conditions with proper heatsinking. The AON6764 datasheet specifies 190A pulsed drain current (IDM) for ≤10µs pulses, subject to junction temperature limits.
Does the AON6764 have an integrated Schottky diode, and how does it improve performance?
Yes, the AON6764 integrates a soft-recovery Schottky body diode (SRFET™ technology), characterized by trr=15.5ns and Qrr=33nC at IF=20A. This reduces voltage overshoot and switching losses during reverse recovery, enabling cleaner waveforms and lower EMI in synchronous rectifier and hard-switched topologies-key advantages over standard MOSFETs without optimized body diodes.
What gate drive voltage is required to fully enhance the AON6764?
The AON6764 achieves full enhancement with gate-source voltages ≥4.5V, supported by its low VGS(th) range of 1.1–1.9V (typical). At VGS=4.5V, RDS(ON) remains <3.45mΩ, making it compatible with 3.3V and 5V logic-level controllers. For minimum conduction loss, VGS=10V yields <2.8mΩ RDS(ON), but 4.5V operation is sufficient for most high-efficiency designs.
Is the AON6764 suitable for automotive applications?
No-the AON6764 is explicitly qualified for the consumer market only. Its datasheet states: "THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED." It is not AEC-Q101 qualified and lacks automotive-grade screening, so it must not be used in automotive, medical, or safety-critical systems.
What thermal metrics define the AON6764's cooling requirements?
The AON6764 features RθJC=3°C/W (junction-to-case) and RθJA=50°C/W (junction-to-ambient, measured on 1in² FR-4 with 2oz copper). For high-power operation, thermal design should prioritize direct case-to-heatsink contact-since RθJC dominates thermal resistance-and avoid relying solely on PCB copper. The AON6764's exposed thermal pad must be soldered to a large copper area or heatsink to maintain TJ≤150°C.
AON6764 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 1 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2120 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6764 FAQ
1.How can I place an order for AON6764 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6764 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6764 reliable?
The price and inventory of AON6764 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6764 is usually 5 days.
3.What payment methods are accepted for AON6764?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6764 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6764?
AON6764 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6764 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6764?
For technical support, including AON6764 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6764 requirements.
6.How does Aetrix verify that AON6764 is sourced from the original manufacturer or authorized distributors?
All AON6764 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6764 meets industry standards.
7.What is the process for return or replacement of AON6764?
All AON6764 units undergo pre-shipment inspection (PSI). If there is an issue with AON6764, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6764 part is unused and in its original packaging.
Return procedure for AON6764:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6764 Tags
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