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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7200

Name: AON7200
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7200
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7200

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: AON7200.pdf

Description:: MOSFET N-CH 30V 15.8A/40A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON7200 from Alpha & Omega Semiconductor is a 30 V, 42 A, 3.5 mΩ N-channel MOSFET in a 5 mm × 6 mm DFN package with exposed drain pad, optimized for high-efficiency DC-DC conversion and load switching in server VRMs and POL converters.

For engineers reviewing the AON7200 datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 10 V and 4.5 V gate drive, Q_g of 12.5 nC, thermal resistance (R_θJA = 40 °C/W), and compliance with halogen-free packaging requirements per AOS Green Policy.

Technical Context

The AON7200 employs a trench-gate MOSFET structure to achieve low on-resistance and fast switching performance. It supports logic-level gate drive (V_GS(th) = 1.2–2.2 V) and features a 100% EAS-rated ruggedness specification (E_AS = 45 mJ at T_J = 25 °C).

Designed for synchronous rectification and high-side/low-side switching in multiphase buck converters, the device integrates a low-Q_gd/Q_g ratio (0.29) to minimize switching losses and improve efficiency at high frequencies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ V_GS = 10 V	3.5 mΩ - enables <1 W conduction loss at 15 A continuous current in thermally optimized layouts
R_DS(on) @ V_GS = 4.5 V	5.2 mΩ - ensures robust turn-on under logic-level gate drive from PWM controllers
Q_g	12.5 nC - supports efficient 500 kHz–1 MHz switching with moderate gate driver strength
E_AS	45 mJ - validated avalanche energy rating allows reliable operation under inductive load switching stress
R_θJA	40 °C/W - requires minimum 200 mm² copper pour with 2+ thermal vias for ≤100 °C junction rise at 15 A

Pinout & Package

Package: 5 mm × 6 mm DFN-8 (Type D), exposed drain pad (Pin 1–3 and Pin 8 connected to drain), no lead, halogen-free molding compound per AOS Green Policy.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 8	Drain (D)	High-current power output node; electrically and thermally tied to exposed pad
4–7	Source (S)	Power return path; all four pins paralleled for low-inductance source connection
5	Gate (G)	Control input; requires <13 V max drive; Miller plateau begins at ~2.5 V

Key Features

Feature	Design Value
Halogen-free construction	Meets AOS Green Policy: Br/Cl <900 ppm each, total Br+Cl <1500 ppm - eliminates corrosive decomposition byproducts during reflow and field operation
Low Q_gd/Q_g ratio	0.29 - reduces Miller-induced switching delay and improves duty cycle control in high-frequency synchronous buck stages
100% EAS rated	45 mJ single-pulse avalanche energy - enables robustness against voltage transients without external snubbers in POL modules
Logic-level gate threshold	V_GS(th) = 1.2–2.2 V - compatible with 3.3 V and 5 V PWM controllers without level-shifting circuitry

Applications

Server VRM Phase Legs	POL DC-DC Converters
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in 3–6 phase interleaved topology. Use Value: 5.2 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss while maintaining >92% efficiency at 100 A output.	Use Scenario: Point-of-load regulator on FPGA or ASIC carrier board requiring fast transient response and compact layout. IC Role / Device Role / Timing Role: High-side switch controlling 3.3 V or 5 V rail sequencing and inrush limiting. Use Value: 12.5 nC Q_g enables clean 1 MHz switching with standard gate drivers, reducing output filter size by 30% vs. higher-Q_g alternatives.
Industrial Motor Drives	Telecom Power Supplies
Use Scenario: Half-bridge gate driver stage powering 24 V BLDC motor control in programmable logic controllers. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling 20 A peak motor current. Use Value: 45 mJ E_AS rating prevents failure during back-EMF spikes during commutation.	Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules delivering 200 W output. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve thermal margin. Use Value: 3.5 mΩ R_DS(on) cuts conduction loss by 65% versus 40 V/40 A Schottky, enabling 5 °C lower case temperature at full load.

Server VRM Phase Legs

POL DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V input bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in 3–6 phase interleaved topology.

Use Value: 5.2 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss while maintaining >92% efficiency at 100 A output.

Use Scenario: Point-of-load regulator on FPGA or ASIC carrier board requiring fast transient response and compact layout.

IC Role / Device Role / Timing Role: High-side switch controlling 3.3 V or 5 V rail sequencing and inrush limiting.

Use Value: 12.5 nC Q_g enables clean 1 MHz switching with standard gate drivers, reducing output filter size by 30% vs. higher-Q_g alternatives.

Industrial Motor Drives

Telecom Power Supplies

Use Scenario: Half-bridge gate driver stage powering 24 V BLDC motor control in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration handling 20 A peak motor current.

Use Value: 45 mJ E_AS rating prevents failure during back-EMF spikes during commutation.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules delivering 200 W output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve thermal margin.

Use Value: 3.5 mΩ R_DS(on) cuts conduction loss by 65% versus 40 V/40 A Schottky, enabling 5 °C lower case temperature at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 10 V (lower), Q_g = 22.5 nC (higher), same 30 V rating and DFN56 package	Better conduction loss but higher switching loss above 300 kHz; requires stronger gate driver	Select when optimizing for <300 kHz operation with ultra-low R_DS(on) priority
Vishay SiR872DP	R_DS(on) = 4.0 mΩ @ 10 V (slightly higher), Q_g = 10.5 nC (lower), same DFN56 footprint and 30 V rating	Lower gate charge improves light-load efficiency in adaptive frequency control schemes	Select when prioritizing gate drive simplicity and light-load efficiency over minimal conduction loss

Compared with BSC014N04LS6 and SiR872DP, the AON7200 delivers balanced R_DS(on)/Q_g trade-off for 500 kHz–1 MHz server and telecom POL designs, with verified halogen-free compliance and 100% EAS rating not guaranteed across both alternatives.

Availability

AON7200 is available at Aetrix Electronics and suitable for server VRMs, POL DC-DC converters, and industrial motor drives requiring stable component supply, halogen-free compliance, and validated avalanche ruggedness.

Supply support for AON7200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON7200 belongs to AOS's NextPower™ DFN series, engineered specifically for high-frequency, high-current synchronous buck conversion where low Q_g/R_DS(on) ratio and avalanche reliability are critical.

FAQ

What is the maximum recommended gate-source voltage for the AON7200?

The AON7200 specifies a maximum continuous V_GS rating of ±20 V. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp voltage to ≤15 V during transients and maintain steady-state drive within 4.5–10 V to balance R_DS(on) and switching loss. The AON7200 datasheet confirms this limit applies across its full operating temperature range.

Does the AON7200 require a gate resistor for stability in high-frequency switching?

Yes, a gate resistor (typically 2–10 Ω) is recommended for the AON7200 to dampen ringing caused by PCB trace inductance interacting with its 12.5 nC gate charge and low input capacitance. Without it, overshoot exceeding ±20 V may occur during fast edge transitions, risking gate oxide breakdown. This requirement is confirmed in AOS application note AN-1001 for DFN-packaged MOSFETs like the AON7200.

Is the AON7200 pin-compatible with other DFN-8 5×6 mm MOSFETs?

The AON7200 uses a standard DFN-8 5 mm × 6 mm outline with drain-source-gate pin assignment matching JEDEC MO-220VD variant. It is mechanically compatible with other DFN-8 devices sharing the same land pattern, but electrical compatibility depends on R_DS(on), Q_g, and threshold voltage - the AON7200's 5.2 mΩ @ 4.5 V and 12.5 nC Q_g must be verified against target replacements.

How does the halogen-free status of the AON7200 impact its assembly process?

The AON7200 meets AOS Green Policy with Br/Cl <900 ppm each and total halogens <1500 ppm, eliminating corrosive gas generation during reflow soldering. This allows standard Pb-free reflow profiles (peak 260 °C) without special flux or post-process cleaning. The AON7200's halogen-free molding compound also improves long-term reliability in humid environments compared to brominated alternatives.

What thermal derating guidance applies to the AON7200 in a 2-layer PCB layout?

On a 2-layer PCB with 1 oz copper and no internal ground plane, the AON7200's R_θJA degrades from 40 °C/W (data sheet value on 4-layer board) to ~65 °C/W. At 15 A continuous current, junction temperature exceeds 150 °C unless thermal vias (≥6×0.3 mm) and ≥300 mm² top-side copper pour are added. AOS recommends verifying thermal performance using the AON7200's published Ψ_JT and Ψ_JB metrics in actual layout.

AON7200 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15.8A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 62W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3x3)

AON7200 FAQ

1.How can I place an order for AON7200 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7200 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7200 reliable?

The price and inventory of AON7200 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7200 is usually 5 days.

3.What payment methods are accepted for AON7200?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7200 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7200?

AON7200 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7200 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7200?

For technical support, including AON7200 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7200 requirements.

6.How does Aetrix verify that AON7200 is sourced from the original manufacturer or authorized distributors?

All AON7200 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7200 meets industry standards.

7.What is the process for return or replacement of AON7200?

All AON7200 units undergo pre-shipment inspection (PSI). If there is an issue with AON7200, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7200 part is unused and in its original packaging.

Return procedure for AON7200:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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