Alpha & Omega Semiconductor Inc. AON7246E

Overview

AON7246E from Alpha & Omega Semiconductor is a 60V, 24A N-channel Trench Power AlphaSGT™ MOSFET in DFN 3×3 EP package, featuring <13.2mΩ R_DS(ON) at V_GS=10V and <17.7mΩ at V_GS=4.5V, logic-level gate drive compatibility, and 100% UIS-tested ruggedness for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the AON7246E datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge × R_DS(ON) figure-of-merit (13.5–20nC total Q_g at 10V), HBM Class 2 ESD protection, and thermal resistance of 5.2°C/W junction-to-case - critical for compact power stage designs requiring high efficiency and reliability.

Technical Context

The AON7246E employs AlphaSGT™ trench technology to achieve optimized conduction and switching trade-offs, with verified unclamped inductive switching (UIS) capability up to 29mJ and body-diode reverse recovery charge (Q_rr) of 49nC at I_F=13A, di/dt=500A/μs. Its gate threshold voltage (1.2–2.2V) ensures robust turn-on under logic-level drive conditions.

Thermal performance is characterized by R_θJC = 5.2°C/W and R_θJA = 55°C/W on 1in² FR-4 board, supporting continuous operation up to T_J = 150°C. The device passes 100% R_g screening and is rated for avalanche energy L=0.3mH per JEDEC JESD24-11.

Key Specifications

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad for efficient heat transfer to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSC014N06LS6 and SiR626DP, the AON7246E delivers optimal balance of low R_DS(ON), moderate Q_g, and proven UIS ruggedness - making it preferred for high-frequency, high-reliability 48V power stages where both efficiency and transient robustness are critical.

Availability

AON7246E is available at Aetrix Electronics and suitable for server VRMs, industrial 48V DC-DC modules, and telecom rectifier applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for AON7246E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON7246E belongs to AOS' AlphaSGT™ family, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained applications where low R_DS(ON), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for the AON7246E at 100°C case temperature?

The AON7246E supports 24A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is validated under steady-state conditions with the DFN 3×3 EP package's 5.2°C/W junction-to-case thermal resistance.

Does the AON7246E support logic-level gate drive from a 3.3V microcontroller?

Yes, the AON7246E supports logic-level gate drive: its gate threshold voltage V_GS(th) ranges from 1.2V to 2.2V, and it achieves <17.7mΩ R_DS(ON) at V_GS = 4.5V. At 3.3V, it remains fully enhanced for most medium-current applications, though R_DS(ON) increases slightly - confirmed by Figure 3 and Figure 5 in the datasheet.

Is the AON7246E qualified for unclamped inductive switching (UIS) and what is its rated avalanche energy?

Yes, the AON7246E is 100% UIS tested per JEDEC JESD24-11. Its rated single-pulse avalanche energy is 29mJ with L = 0.3mH, measured at T_J = 25°C. This ruggedness is critical for reliability in hard-switched topologies like synchronous buck converters where inductive kickback occurs.

What is the thermal resistance from junction to ambient (RθJA) for the AON7246E under standard test conditions?

The AON7246E has R_θJA = 55°C/W when mounted on a 1in² FR-4 board with 2oz copper in still air (per Note H). This value is used for conservative ambient-limited thermal design; for heatsink-assisted applications, the lower R_θJC = 5.2°C/W is more relevant.

How does the body-diode performance of the AON7246E compare to discrete Schottky diodes in synchronous rectification?

The AON7246E's body diode exhibits V_SD = 0.72V typical at I_S = 1A and Q_rr = 49nC at I_F = 13A, di/dt = 500A/μs. While forward voltage is higher than Schottky diodes, its integrated gate control enables zero-voltage switching and eliminates reverse recovery loss - resulting in net system efficiency gain in properly designed synchronous rectifiers.