Alpha & Omega Semiconductor Inc. AON7264C

Overview

AON7264C from Alpha & Omega Semiconductor is a 60V, 24A N-channel Trench Power AlphaSGT™ MOSFET in DFN 3×3 EP package, featuring R_DS(ON) < 13.2 mΩ at V_GS = 10 V and < 17.7 mΩ at V_GS = 4.5 V, logic-level gate drive compatibility, and 100% UIS tested for robustness in high-frequency synchronous rectification and DC-DC converter primary-side switching.

For engineers reviewing the AON7264C datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge × R_DS(ON) figure-of-merit (15–21 nC total Q_g at 10 V), HBM Class 2 ESD protection, 100% R_g tested gate resistance, and thermal performance validated via R_θJC = 5.2°C/W and R_θJA = 55°C/W on standard FR-4 board.

Technical Context

The AON7264C employs AlphaSGT™ trench technology to achieve low conduction loss while maintaining fast switching dynamics: t_d(on) = 4 ns, t_r = 3.5 ns, t_d(off) = 25.5 ns, and t_f = 4 ns under V_GS = 10 V, V_DS = 30 V, R_GEN = 3 Ω conditions. Its body diode exhibits V_SD = 0.72–1.0 V at I_S = 1 A and t_rr = 15.5 ns with Q_rr = 49 nC at I_F = 13 A, di/dt = 500 A/ms.

Thermally, the device supports continuous operation up to T_J = 150°C, with power derating beginning at T_C > 25°C (P_D = 72 W at T_C = 25°C, dropping to 24 W at T_C = 100°C). Absolute maximum ratings include V_DS = 60 V, V_GS = ±20 V, and I_D = 24 A (continuous, T_C = 25°C).

Key Specifications

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), surface-mount, thermally enhanced with bottom-side copper thermal slug.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSC014N06LS6 and SiR626DP, the AON7264C offers balanced FOM (Q_g × R_DS(ON)) for mid-frequency switching, guaranteed UIS robustness, and Class 2 ESD - making it optimal for cost-sensitive, high-reliability 48 V–60 V DC-DC designs where layout space and thermal constraints are tight.

Availability

AON7264C is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial 48 V DC-DC converters, and automotive ADAS camera PSUs requiring stable component supply, traceable sourcing, and lifecycle continuity.

Supply support for AON7264C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON7264C belongs to AOS' AlphaSGT™ N-channel MOSFET product line, engineered for high-efficiency, high-frequency power conversion in space-constrained applications where low R_DS(ON), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for the AON7264C at 100°C case temperature?

The AON7264C supports 24 A continuous drain current at T_C = 25°C, derating linearly to 24 A at T_C = 100°C per Figure 13 in the datasheet. At T_C = 100°C, the rated current is 24 A - confirmed by the "Steady-State" row under "Continuous Drain Current G" in Absolute Maximum Ratings, where ID = 24 A applies for T_C ≤ 100°C. This reflects package-limited current handling independent of junction temperature limits.

Does the AON7264C have integrated ESD protection, and what level is specified?

Yes, the AON7264C includes integrated ESD protection rated to HBM Class 2 per JEDEC JS-001, meaning it withstands ≥2 kV and <4 kV human-body-model discharge. This is explicitly stated in the Product Summary section and verified in the Absolute Maximum Ratings table under "Typical ESD protection". No external TVS diodes are required for basic handling protection in automated assembly lines.

Can the AON7264C be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - while the AON7264C has logic-level threshold (V_GS(th) = 1.2–2.2 V), full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(ON) < 17.7 mΩ. A 3.3 V GPIO cannot reliably sustain sufficient gate overdrive, resulting in elevated conduction loss and thermal risk. A dedicated gate driver or level shifter is required for production use, especially above 5 A load current.

What is the thermal resistance from junction to case (R_θJC) for the AON7264C, and how is it measured?

The AON7264C has R_θJC = 5.2°C/W, measured with the device mounted to a large heatsink under steady-state conditions (Note F). This value is used to calculate junction temperature rise when the exposed pad is soldered to a copper thermal plane or heatsink: T_J = T_C + (P_D × 5.2). It does not apply to board-only cooling - for that, R_θJA = 55°C/W (on 1 in² FR-4, 2 oz Cu) must be used.

Is the AON7264C suitable for use in automotive applications, and does it meet AEC-Q101?

The AON7264C is not AEC-Q101 qualified. While its absolute maximum ratings (T_J = –55 to 150°C) and construction align with automotive thermal requirements, AOS does not list AON7264C on its AEC-Q101 qualified products page, and the datasheet contains no AEC-Q101 test report references. For automotive ADAS or infotainment systems, AOS recommends AON6254 or AON6294 as AEC-Q101 alternatives.