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Alpha & Omega Semiconductor Inc. AON7264E
- Part No.:
- AON7264E
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
AON7264E.pdf
- Description:
- MOSFET N-CHANNEL 60V 28A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,884
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Product details
Overview
AON7264E from Alpha & Omega Semiconductor is a 60V, 28A N-channel Trench Power AlphaSGT™ MOSFET in DFN 3×3 EP package, featuring RDS(ON) < 9.5 mΩ at VGS = 10 V and < 13.3 mΩ at VGS = 4.5 V, with 100% UIS and Rg tested, optimized for high-efficiency power supplies and secondary synchronous rectification.
For engineers reviewing the AON7264E datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg(10V) = 14.5–25 nC), HBM Class 2 ESD protection, 100% avalanche-tested ruggedness, thermal resistance RθJC = 4.5 °C/W, and DFN 3×3 EP package compatibility with high-density PCB layouts.
Technical Context
The AON7264E employs AlphaSGT™ trench technology to achieve low RDS(ON) and high current density in a thermally enhanced DFN package. Its gate threshold voltage (1.4–2.4 V) enables robust 4.5 V logic-level drive, while Qgd = 3.5 nC and Crss = 28 pF support fast switching with reduced Miller-induced shoot-through risk.
Designed for unclamped inductive switching (UIS) reliability, it delivers 43 mJ avalanche energy (L = 0.3 mH) and supports continuous drain current up to 28 A at TC = 25 °C. Body diode characteristics (VSD = 0.72–1.0 V, trr = 19 ns, Qrr = 65 nC) are specified for synchronous rectifier operation with controlled reverse recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage compatible with 48 V input systems and 24 V bus architectures. |
| RDS(ON) @ VGS=10 V | < 9.5 mΩ - Enables <1.5 W conduction loss at 28 A, critical for high-current synchronous rectifiers. |
| RDS(ON) @ VGS=4.5 V | < 13.3 mΩ - Ensures full enhancement with standard 5 V logic drivers, eliminating need for level-shifting. |
| Qg(10V) | 14.5–25 nC - Low total gate charge reduces driver power demand and switching losses in high-frequency DC/DC converters. |
| RθJC | 4.5 °C/W - Junction-to-case thermal resistance allows >11 W steady-state power dissipation at TC = 100 °C with minimal heatsinking. |
| EAS | 43 mJ - Single-pulse avalanche energy rating confirms ruggedness under transient overvoltage conditions without derating. |
| tr/tf | 3.5 ns / 3 ns - Fast rise/fall times support >1 MHz switching frequencies while maintaining low ESW. |
Pinout & Package
Package: DFN 3×3 mm, Exposed Pad (EP), 8-pin, bottom-side thermal pad for enhanced heat transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8, 7, 6 | Drain (D) | Seven parallel drain terminals connected to internal die source metallization and exposed thermal pad - primary current path and thermal conduction path to PCB. |
| 5 | Source (S) | Single-source terminal; connects to source bond wires and serves as reference node for gate drive and current sensing. |
| G (Pin 5 adjacent) | Gate (G) | Standard gate input; located adjacent to Source (Pin 5) to minimize loop inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ trench process | Delivers 30% lower RDS(ON) × Qg figure-of-merit vs. conventional Trench MOSFETs, improving efficiency in 300–1000 kHz converters. |
| 100% UIS tested | Every unit validated for unclamped inductive switching survival at rated EAS, eliminating field failure risk from inductive transients. |
| HBM Class 2 ESD protection | Withstands ≥2 kV human-body-model discharge, enabling robust handling during SMT assembly and board-level testing. |
| Low Qgd/Qg ratio | Qgd = 3.5 nC / Qg(10V) ≈ 14% - minimizes Miller plateau duration and improves controllability during hard-switching transitions. |
| Optimized body diode | trr = 19 ns, Qrr = 65 nC - enables zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge topologies with predictable recovery behavior. |
Applications
| Server VRM Output Stage | Industrial 48V DC/DC Converter |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores. IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: RDS(ON) < 9.5 mΩ at 10 V enables <1.2 W loss at 35 A, lowering output stage temperature rise by >15 °C vs. legacy MOSFETs. |
Use Scenario: Isolated 48 V to 12 V/24 V DC/DC module in PLC and motor drive power supplies. IC Role / Device Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology. Use Value: 4.5 V drive capability eliminates gate driver IC, reducing BOM count; 100% UIS test ensures reliability during load dump transients. |
| Telecom Rectifier Module | Automotive ADAS Power Supply |
|
Use Scenario: 48 V telecom rectifier with >95% efficiency target and forced-air cooling. IC Role / Device Role: Primary-side high-side switch in interleaved two-phase buck converter. Use Value: RθJC = 4.5 °C/W allows direct mounting to cold plate, sustaining 28 A continuous current without thermal throttling. |
Use Scenario: Compact 12 V input power supply for radar sensor ECUs operating at ambient up to 105 °C. IC Role / Device Role: Input-stage switch in buck controller with integrated FET driver. Use Value: VGS(th) = 1.4–2.4 V ensures reliable turn-on across automotive temperature range; HBM Class 2 prevents ESD damage during automated assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | RDS(ON) = 4.0 mΩ @ 10 V (lower), but 40 V VDS rating limits use to ≤36 V systems; DPAK package increases RθJA to 62 °C/W. | Suitable only for 24 V or lower input rails; requires larger PCB area and additional thermal vias for equivalent thermal performance. | Select when VDS margin is not required and ultra-low RDS(ON) dominates system efficiency goals. |
| Vishay SiR626DP | RDS(ON) = 9.0 mΩ @ 10 V (comparable), but Qg(10V) = 31 nC (2.2× higher); SO-8 package lacks exposed thermal pad. | Higher gate charge increases driver loss and limits max switching frequency; SO-8 footprint restricts thermal management in high-power density designs. | Prefer for cost-sensitive, lower-frequency (<500 kHz) applications where layout space and thermal headroom are less constrained. |
Compared with IPP040N04L and SiR626DP, the AON7264E provides optimal balance of 60 V rating, low Qg, DFN thermal performance, and 4.5 V drive-making it uniquely suited for compact, high-frequency, 48 V-input power stages requiring both efficiency and ruggedness.
Availability
AON7264E is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, and telecom rectifier modules requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for AON7264E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON7264E belongs to AOS' AlphaSGT™ family-engineered specifically for high-current, high-frequency power conversion where low RDS(ON) × Qg and rugged avalanche capability are essential.
FAQ
What is the maximum continuous drain current for AON7264E at 100°C case temperature?
The AON7264E supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table under "Power Dissipation B." This rating is derived from RθJC = 4.5 °C/W and TJ(MAX) = 150 °C, ensuring safe operation without external heatsink in thermally managed PCB layouts. The AON7264E maintains this current capability while preserving its <9.5 mΩ RDS(ON) at 10 V gate drive.
Does AON7264E support 5 V logic-level gate drive?
Yes, the AON7264E is fully characterized for 4.5 V gate drive, with RDS(ON) < 13.3 mΩ at VGS = 4.5 V and ID = 15 A. Its gate threshold voltage (1.4–2.4 V) guarantees strong enhancement at 5 V, eliminating the need for gate driver boost circuits. This makes the AON7264E ideal for microcontroller-driven power stages where 5 V GPIO is used directly to control the MOSFET.
Is AON7264E suitable for synchronous rectification in flyback converters?
Yes, the AON7264E is explicitly recommended for secondary synchronous rectification applications. Its low VSD (0.72–1.0 V), fast trr (19 ns), and low Qrr (65 nC) minimize body diode conduction loss and reverse recovery spikes. The AON7264E's 100% Rg testing further ensures consistent gate drive timing critical for accurate synchronous timing control in flyback topologies.
What is the thermal resistance from junction to ambient (RθJA) for AON7264E on a standard PCB?
The AON7264E has RθJA = 55 °C/W when mounted on a 1 in² FR-4 board with 2 oz. copper (per Note H). This value assumes still air and defines the worst-case thermal path for natural convection cooling. For high-power applications, the exposed pad must be soldered to a large copper pour with ≥6 thermal vias to achieve this rating. The AON7264E's RθJC = 4.5 °C/W enables superior thermal performance when using heatsinking or cold-plate mounting.
Are SPICE models or layout footprints available for AON7264E?
Yes, official PSpice and LTspice models for AON7264E are published on the Alpha & Omega Semiconductor website (aosmd.com), including transient and thermal behavioral models. Standard IPC-7351-compliant DFN 3×3 EP footprint files (Gerber, Altium, and Eagle formats) are also provided in the product design support section. These resources ensure accurate simulation and reliable PCB implementation of the AON7264E in power stage designs.
AON7264E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN-EP (3x3)
AON7264E FAQ
1.How can I place an order for AON7264E through Aetrix?
Please submit a Request for Quotation (RFQ) for AON7264E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON7264E reliable?
The price and inventory of AON7264E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7264E is usually 5 days.
3.What payment methods are accepted for AON7264E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7264E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON7264E?
AON7264E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON7264E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON7264E?
For technical support, including AON7264E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7264E requirements.
6.How does Aetrix verify that AON7264E is sourced from the original manufacturer or authorized distributors?
All AON7264E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7264E meets industry standards.
7.What is the process for return or replacement of AON7264E?
All AON7264E units undergo pre-shipment inspection (PSI). If there is an issue with AON7264E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON7264E part is unused and in its original packaging.
Return procedure for AON7264E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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