Alpha & Omega Semiconductor Inc. AON7380

Overview

AON7380 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS (αMOS LV) MOSFET optimized for high-efficiency DC/DC converters, delivering 24A continuous drain current at V_GS=10V, <6.8mΩ R_DS(ON) at V_GS=10V, and <10.5mΩ at V_GS=4.5V, with 100% UIS and R_g testing for robustness in telecom and industrial isolated power supplies.

For engineers reviewing the AON7380 datasheet, pinout, applications, or equivalent options, key selection considerations include its DFN 3×3 EP package thermal performance (R_θJC = 5.2°C/W), low gate charge (Q_g(10V) = 13–25nC), body-diode recovery characteristics (t_rr = 11ns, Q_rr = 17nC), and avalanche-rated operation in hard-switching topologies.

Technical Context

The AON7380 employs trench-gate αMOS LV process technology to achieve low R_DS(ON) and fast switching with minimal gate drive requirements. Its 8-pin DFN 3×3 EP package features four parallel source terminals and two drain terminals to reduce parasitic inductance and improve current sharing in high-frequency synchronous buck stages.

Static parameters are characterized across –55°C to 150°C junction temperature range, with gate threshold voltage V_GS(th) tightly specified at 1.4–2.2V (typ. 1.8V) and forward transconductance g_FS = 40S. Dynamic behavior is validated under unclamped inductive switching (UIS) and body-diode reverse recovery (IF = 20A, di/dt = 500A/μs).

Key Specifications

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), 8-lead, RoHS and halogen-free compliant. Thermal pad soldered to PCB for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSC014N04LS and SiR872DP, the AON7380 offers best-in-class balance of low gate charge, proven UIS robustness, and compact DFN thermal performance - making it preferred for space-constrained, high-frequency isolated DC/DC where reliability under transient stress is non-negotiable.

Availability

AON7380 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON7380 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, telecom, and industrial markets.

The AON7380 belongs to AOS' αMOS LV low-voltage trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion where low R_DS(ON), fast switching, and avalanche ruggedness are jointly required.

FAQ

What is the maximum continuous drain current rating for the AON7380 at 100°C case temperature?

The AON7380 supports 24A continuous drain current at V_GS = 10V and T_C = 100°C, as confirmed in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal via design to maintain R_θJC = 5.2°C/W. At higher ambient temperatures or reduced heatsinking, derating per Figure 13 applies - e.g., 15A at T_C = 125°C.

Does the AON7380 have a specified gate threshold voltage range, and how does it affect 5V logic-level drive?

Yes, the AON7380 has a gate threshold voltage V_GS(th) of 1.4–2.2V (typ. 1.8V) at T_J = 25°C. This ensures reliable enhancement-mode turn-on with standard 5V microcontroller or PWM controller outputs, even at elevated temperatures - V_GS(th) remains ≤2.2V up to 125°C, guaranteeing full enhancement at V_GS = 4.5V across the full operating range.

Is the AON7380 suitable for synchronous rectification in a 600kHz flyback converter?

Yes, the AON7380 is well-suited for synchronous rectification in 600kHz flyback converters. Its 11ns body-diode reverse recovery time (t_rr) and 17nC reverse recovery charge (Q_rr) minimize switching loss and cross-conduction risk, while its low Q_gd/Q_g ratio enhances noise immunity. The DFN 3×3 EP package also supports tight layout for low-stray-inductance secondary-side routing.

What thermal resistance values are specified for the AON7380, and how do they impact heatsink selection?

The AON7380 specifies R_θJC = 5.2°C/W (junction-to-case) and R_θJA = 60°C/W (junction-to-ambient, on 1in² FR-4 board). For heatsink design, R_θJC governs the interface between the exposed pad and heatsink - a thermal interface material with ≤0.5°C·in²/W resistance yields ≤2.6°C/W total junction-to-heatsink resistance. R_θJA is used only for baseline ambient-limited operation without added heatsinking.

How is avalanche ruggedness verified for the AON7380, and what energy level is guaranteed?

The AON7380 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A116, with guaranteed single-pulse avalanche energy E_AS = 2mJ at T_J = 25°C. This is measured using L = 0.001mH, I_AS = 24A, and V_DS spike ≤30V. The test ensures robustness in hard-switching topologies like active clamp forward or LLC, eliminating need for external clamping circuits.