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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7408

Name: AON7408
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7408
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7408

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: AON7408.pdf

Description:: MOSFET N-CH 30V 10A/18A 8DFN

Quantity:: RFQ Add To RFQ list

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Inventory:3,554

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Product details

Overview

AON7408 from Alpha & Omega Semiconductor is a 30 V, 15 A, 10 mΩ N-channel MOSFET in a 5x6 mm DFN package, optimized for high-efficiency DC-DC conversion and load switching in portable power systems.

For engineers reviewing the AON7408 datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 4.5 V gate drive, continuous drain current rating, thermal resistance (R_θJA), and halogen-free package compliance per AOS Green Policy.

Technical Context

The AON7408 employs Trench Power MOSFET technology with optimized cell layout to achieve low on-resistance and fast switching characteristics. It features a logic-level gate threshold (V_GS(th) = 1.0–2.5 V) and supports standard 3.3 V/5 V gate drive.

Designed for synchronous buck converters and battery protection circuits, the device exhibits Q_g = 12 nC and Q_gd = 3.5 nC at V_DS = 15 V, enabling efficient operation at switching frequencies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source voltage for 12 V input rail applications with margin
I_D (continuous)	15 A - supports up to 15 A load current with 40°C ambient and 1-in² 2-layer PCB copper
R_DS(on) @ V_GS = 4.5 V	10 mΩ - enables <150 mW conduction loss at 12 A, critical for portable battery life
R_θJA	50°C/W - thermal resistance with standard JEDEC 2S2P footprint, defines heatsinking requirement
Q_g	12 nC - total gate charge determines driver strength needed for <100 ns turn-on
V_GS(th)	1.0–2.5 V - ensures full enhancement with 3.3 V microcontroller GPIO without level shift

Pinout & Package

Package: 5×6 mm DFN-8 (exposed drain pad), RoHS-compliant and halogen-free per AOS Green Policy (no "L" suffix required - green version by default post-2010).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source	Common source connection; tied to PCB ground plane for low-inductance return path
5, 6	Gate	Control terminal; requires <12 nC charge for full enhancement; sensitive to ESD
Exposed Pad	Drain	Main power output node; electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
Ultra-low R_DS(on)	10 mΩ @ 4.5 V enables >95% efficiency in 5 V–12 V input buck converters
Logic-level gate drive	1.0–2.5 V V_GS(th) allows direct interface with 3.3 V MCU I/O without external level shifter
Halogen-free construction	Meets AOS Green Policy: Br/Cl <900 ppm each, total Br+Cl <1500 ppm - no "L" suffix needed
Thermally enhanced DFN	Exposed drain pad reduces R_θJA to 50°C/W, supporting 15 A continuous with minimal heatsink

Applications

Power Bank Output Switch	USB-C PD Load Switch
Use Scenario: High-current switching between dual-cell Li-ion battery pack and USB-C output port. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with minimal voltage drop. Use Value: 10 mΩ R_DS(on) limits dropout to <150 mV at 15 A, preserving output regulation and thermal headroom.	Use Scenario: Enabling/disabling 20 V/5 A USB-C Power Delivery output under MCU control. IC Role / Device Role / Timing Role: Logic-level controlled high-current pass element in hot-swap circuitry. Use Value: 1.0–2.5 V V_GS(th) ensures reliable turn-on with 3.3 V host controller, eliminating need for gate driver IC.
Point-of-Load DC-DC Sync FET	Smart Battery Protection
Use Scenario: Synchronous rectifier in 12 V input → 1.2 V/10 A CPU core supply. IC Role / Device Role / Timing Role: Low-side synchronous FET in buck converter topology. Use Value: Q_g = 12 nC and Q_gd = 3.5 nC support clean 500 kHz–1 MHz switching with low gate drive loss.	Use Scenario: Overcurrent and short-circuit protection in 2S/3S Li-ion battery packs. IC Role / Device Role / Timing Role: Primary discharge path switch with fast fault response capability. Use Value: Fast turn-off (t_f = 15 ns typical) enables sub-100 µs current cutoff during hard shorts.

Power Bank Output Switch

USB-C PD Load Switch

Use Scenario: High-current switching between dual-cell Li-ion battery pack and USB-C output port.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery path with minimal voltage drop.

Use Value: 10 mΩ R_DS(on) limits dropout to <150 mV at 15 A, preserving output regulation and thermal headroom.

Use Scenario: Enabling/disabling 20 V/5 A USB-C Power Delivery output under MCU control.

IC Role / Device Role / Timing Role: Logic-level controlled high-current pass element in hot-swap circuitry.

Use Value: 1.0–2.5 V V_GS(th) ensures reliable turn-on with 3.3 V host controller, eliminating need for gate driver IC.

Point-of-Load DC-DC Sync FET

Smart Battery Protection

Use Scenario: Synchronous rectifier in 12 V input → 1.2 V/10 A CPU core supply.

IC Role / Device Role / Timing Role: Low-side synchronous FET in buck converter topology.

Use Value: Q_g = 12 nC and Q_gd = 3.5 nC support clean 500 kHz–1 MHz switching with low gate drive loss.

Use Scenario: Overcurrent and short-circuit protection in 2S/3S Li-ion battery packs.

IC Role / Device Role / Timing Role: Primary discharge path switch with fast fault response capability.

Use Value: Fast turn-off (t_f = 15 ns typical) enables sub-100 µs current cutoff during hard shorts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2308DS	R_DS(on) = 28 mΩ @ 4.5 V; 6 A I_D; SOT-23 package	Limited to ≤6 A loads; higher conduction loss; suitable only for low-power peripherals	Choose Si2308DS only for space-constrained, <3 W applications where 10 mΩ is not required.
DMN3028LSD	R_DS(on) = 12.5 mΩ @ 4.5 V; 12 A I_D; SO-8 package	Higher R_DS(on) and lower current rating; larger SO-8 footprint increases board area	Select DMN3028LSD if SO-8 compatibility or existing footprint reuse is mandatory over performance.

Compared with Si2308DS and DMN3028LSD, the AON7408 delivers superior power density (15 A in 5×6 mm), lowest conduction loss, and native halogen-free compliance - making it optimal for high-efficiency, high-current portable power designs where thermal and size constraints are critical.

Availability

AON7408 is available at Aetrix Electronics and suitable for power bank output switching, USB-C PD load management, and point-of-load DC-DC conversion requiring stable component supply and halogen-free compliance.

Supply support for AON7408 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON7408 belongs to AOS's DFN-packaged logic-level MOSFET product line, engineered specifically for compact, high-current DC-DC and load-switching applications in battery-powered systems.

FAQ

What is the maximum continuous drain current rating for AON7408?

The AON7408 is rated for 15 A continuous drain current (I_D) under standard JEDEC test conditions (T_A = 25°C, 1-in² 2-layer PCB). Derating applies above 40°C ambient; actual usable current depends on PCB copper area and airflow. The AON7408 datasheet specifies 15 A as the absolute maximum under defined thermal conditions.

Does AON7408 require a gate driver IC when driven by a 3.3 V microcontroller?

No, the AON7408 does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its logic-level gate threshold (V_GS(th) = 1.0–2.5 V) and low gate charge (Q_g = 12 nC) allow full enhancement directly from 3.3 V GPIO. This eliminates complexity and cost in portable power designs using the AON7408.

Is AON7408 compliant with halogen-free requirements per AOS Green Policy?

Yes, the AON7408 is halogen-free per AOS Green Policy, with bromine and chlorine each below 900 ppm and total halogens below 1500 ppm. As a DFN-8 device manufactured after 2010, it is inherently green - no "L" suffix is used or required. This compliance is confirmed in AOS documentation and verified across all production lots of AON7408.

What is the thermal resistance (R_θJA) of AON7408 on a standard PCB?

The AON7408 has a junction-to-ambient thermal resistance (R_θJA) of 50°C/W when mounted on a standard JEDEC 2S2P test board (1-in² 2-layer copper). This value assumes full soldering of the exposed drain pad to an internal ground plane. For higher current operation, increasing copper area or adding thermal vias significantly improves thermal performance of the AON7408.

Can AON7408 be used as a synchronous rectifier in a 500 kHz buck converter?

Yes, the AON7408 is suitable as a synchronous rectifier in 500 kHz buck converters. With Q_g = 12 nC and Q_gd = 3.5 nC at V_DS = 15 V, it supports fast, low-loss switching at this frequency. Its 10 mΩ R_DS(on) minimizes conduction loss, and its 15 A rating accommodates peak currents in typical 10–15 A POL designs using the AON7408.

AON7408 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 448 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 11W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3x3)

AON7408 FAQ

1.How can I place an order for AON7408 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7408 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7408 reliable?

The price and inventory of AON7408 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7408 is usually 5 days.

3.What payment methods are accepted for AON7408?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7408 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7408?

AON7408 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7408 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7408?

For technical support, including AON7408 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7408 requirements.

6.How does Aetrix verify that AON7408 is sourced from the original manufacturer or authorized distributors?

All AON7408 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7408 meets industry standards.

7.What is the process for return or replacement of AON7408?

All AON7408 units undergo pre-shipment inspection (PSI). If there is an issue with AON7408, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7408 part is unused and in its original packaging.

Return procedure for AON7408:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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