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Alpha & Omega Semiconductor Inc. AON7502

Part No.:
AON7502
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixAON7502.pdf
Description:
MOSFET N-CH 30V 21A/30A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,881

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Product details

Overview

AON7502 from Alpha & Omega Semiconductor is a 30V N-Channel enhancement-mode MOSFET in DFN 3×3 EP package, featuring RDS(ON) < 4.7 mΩ at VGS = 10 V and < 7.6 mΩ at VGS = 6 V, 30 A continuous drain current, and low gate charge (Qg = 15.6–22 nC). It serves as a high-efficiency load switch in battery-powered systems requiring fast switching and robust avalanche capability.

For engineers reviewing the AON7502 datasheet, pinout, applications, or equivalent options, key selection criteria include its 30V VDS, 30A ID rating at TC = 25°C, 100% UIS-tested ruggedness, 1.1–3.3 Ω gate resistance, and thermal performance with RθJC = 4°C/W and RθJA = 75°C/W on standard FR-4.

Technical Context

The AON7502 employs AlphaMOS LV trench technology to achieve low conduction loss and fast switching. Its gate threshold voltage (1.4–3.0 V) enables reliable turn-on with 4.5 V logic-level drive, while Qg(4.5V) = 6.2–12 nC supports efficient PWM control in DC-DC converters and load switches.

It delivers 17 A avalanche current (IAS) and 31 mJ single-pulse avalanche energy (EAS) under L = 0.05 mH conditions, with body-diode reverse recovery time trr = 15.3 ns and Qrr = 20 nC - critical for synchronous rectification and bidirectional power flow in portable power management.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage; defines safe operating range in 12–24 V battery and adapter input stages.
ID (TC = 25°C)30 A - Continuous drain current rating at case temperature 25°C; supports high-current load switching without forced cooling.
RDS(ON) (VGS = 10 V)< 4.7 mΩ - Low on-resistance minimizes I²R losses in high-current paths; enables <100 mW conduction loss at 15 A.
Qg(10V)15.6–22 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers like AOZ128x series.
RθJC4°C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for >3 W steady-state dissipation at TJ ≤ 150°C.
EAS31 mJ - Single-pulse unclamped inductive switching energy; ensures reliability during load dump or hot-swap transients.
tr/tf4 ns / 4.3 ns - Fast rise/fall times reduce switching losses in high-frequency (>500 kHz) DC-DC topologies.

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad for PCB heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 8, 7, 6, 5 (GND-connected pads)Source (S)All source terminals are internally tied and connected to the exposed thermal pad - must be soldered to large copper pour for optimal thermal and electrical performance.
1 (Top View)Gate (G)Single gate input; requires low-impedance drive path to minimize ringing and ensure clean turn-on/turn-off.
2, 3, 4, 5, 6, 7, 8 (Top View)Drain (D)Multiple drain terminals distributed across package edges - reduces current crowding and improves current sharing in high-ID operation.

Key Features

FeatureDesign Value
Latest Trench Power AlphaMOS (αMOS LV) technologyEnables sub-5 mΩ RDS(ON) at 10 V while maintaining high cell density and low gate charge for compact, high-efficiency designs.
100% UIS testedEach unit validated for unclamped inductive switching robustness - eliminates field failure risk in motor drive or hot-swap applications.
Low RDS(ON) at 6 VGSRDS(ON) < 7.6 mΩ at 6 V enables full enhancement with 5 V microcontroller GPIO or USB-powered logic, reducing need for level shifters.
High current capability (30 A)Rated for 30 A continuous drain current at TC = 25°C - supports high-power load switching in PD adapters, e-bike controllers, and industrial SMPS.
RoHS and Halogen-Free CompliantMeets IPC-1752A material declaration requirements and EU RoHS Directive 2011/65/EU - suitable for consumer and medical end equipment.

Applications

Battery Protection CircuitUSB-C Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in 2-cell Li-ion battery packs with integrated fuel gauge and protection IC.

IC Role / Device Role: Primary high-side load switch controlling main power path between battery and system bus.

Use Value: Low RDS(ON) minimizes voltage drop across protection FET, preserving battery runtime; 100% UIS testing ensures survival during sudden short events.

Use Scenario: 20 V/5 A power path switching in USB-C PD 3.0 compliant chargers and power banks.

IC Role / Device Role: High-side power switch enabling dynamic VBUS routing between input and output ports.

Use Value: Fast tr/tf and low Qg support high-frequency soft-start and precise current limiting; DFN 3×3 footprint saves board space vs. SO-8 alternatives.

DC-DC Synchronous RectifierIndustrial Load Switching Module

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V flyback converters for PoE-powered devices.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency above 85%.

Use Value: Body-diode VSD = 0.71–1.0 V and trr = 15.3 ns enable low-loss commutation; low RDS(ON) reduces conduction loss by >60% vs. 40 V Schottky.

Use Scenario: Remote-controlled 24 V load switching in PLC I/O modules with surge and ESD immunity requirements.

IC Role / Device Role: High-reliability power switch interfacing MCU GPIO to solenoid, relay, or LED bank.

Use Value: 30 V rating accommodates 24 V nominal + 30% line surge; RθJC = 4°C/W enables stable operation up to 70°C ambient without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiR20DPRDS(ON) = 3.9 mΩ @ 10 V; higher Qg = 28 nC; TO-252 package; RθJA = 62°C/WRequires larger PCB area and more gate drive power; better thermal performance in open-frame heatsinked designsPrefer when board space permits TO-252 and higher peak current (>35 A) is needed
DMN3025LFG-7RDS(ON) = 4.5 mΩ @ 10 V; Qg = 16.5 nC; same DFN 3×3 EP package; lower EAS = 22 mJLower avalanche ruggedness; not 100% UIS tested per datasheetAcceptable for non-critical load switching where transient stress is limited and cost is prioritized

Compared with SiR20DP and DMN3025LFG-7, the AON7502 offers superior UIS ruggedness and lower gate charge in the same DFN 3×3 footprint, making it optimal for space-constrained, high-reliability battery and USB-C power delivery designs where transient immunity and driver simplicity are critical.

Availability

AON7502 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial load switching modules requiring stable component supply and long-term production continuity.

Supply support for AON7502 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON7502 belongs to the AlphaMOS LV trench MOSFET product line, engineered for high-current, low-voltage load switching and synchronous rectification in portable and high-density power systems.

FAQ

What is the maximum continuous drain current rating for the AON7502?

The AON7502 is rated for 30 A continuous drain current at case temperature TC = 25°C. At TC = 100°C, the derated current is 21 A. This rating assumes proper PCB copper area for thermal conduction via the exposed drain pad and adherence to the SOA curve in the datasheet. The AON7502's 30 A rating reflects package-limited current handling, not silicon-limited capability.

Does the AON7502 support 5 V logic-level gate drive?

Yes, the AON7502 supports 5 V logic-level gate drive. Its gate threshold voltage VGS(th) ranges from 1.4 V to 3.0 V, and RDS(ON) remains < 7.6 mΩ at VGS = 6 V. With Qg(4.5V) = 6.2–12 nC, the AON7502 turns on fully using standard 5 V MCU GPIO or dedicated 5 V gate drivers - no level shifter required in most battery management and USB-C applications.

What does "100% UIS tested" mean for the AON7502?

"100% UIS tested" means every AON7502 unit undergoes unclamped inductive switching validation per JEDEC JESD22-A110. Each device is subjected to a controlled inductive transient (L = 0.05 mH) to verify it can safely absorb 31 mJ of avalanche energy without parametric shift or failure. This ensures field reliability in hot-swap, motor stall, and cable disconnect scenarios where voltage spikes occur.

Can the AON7502 be used in synchronous rectification applications?

Yes, the AON7502 is suitable for synchronous rectification. Its body diode exhibits VSD = 0.71–1.0 V at IS = 1 A and fast reverse recovery (trr = 15.3 ns, Qrr = 20 nC), minimizing dead-time losses. Combined with low RDS(ON) and high current capability, the AON7502 replaces Schottky diodes in 12–24 V secondary-side flyback and LLC converters, improving efficiency by 2–4% at full load.

What is the thermal resistance from junction to ambient (RθJA) for the AON7502?

The AON7502 has RθJA = 75°C/W when mounted on a 1 in² FR-4 board with 2 oz. copper in still air (per JEDEC JESD51-7). This value assumes standard layout practices: full thermal pad soldering, 4 thermal vias under the EP, and minimal trace length. For higher power operation, RθJC = 4°C/W enables direct heatsink attachment to the exposed drain pad, decoupling thermal performance from PCB design limitations.

AON7502 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
1022 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN-EP (3x3)

AON7502 FAQ

1.How can I place an order for AON7502 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7502 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7502 reliable?

The price and inventory of AON7502 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7502 is usually 5 days.

3.What payment methods are accepted for AON7502?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7502 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7502?

AON7502 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7502 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7502?

For technical support, including AON7502 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7502 requirements.

6.How does Aetrix verify that AON7502 is sourced from the original manufacturer or authorized distributors?

All AON7502 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7502 meets industry standards.

7.What is the process for return or replacement of AON7502?

All AON7502 units undergo pre-shipment inspection (PSI). If there is an issue with AON7502, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7502 part is unused and in its original packaging.

Return procedure for AON7502:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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