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Alpha & Omega Semiconductor Inc. AON7514

Part No.:
AON7514
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixAON7514.pdf
Description:
MOSFET N-CH 30V 20A/30A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,635

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Product details

Overview

AON7514 from Alpha & Omega Semiconductor is a 30V N-Channel enhancement-mode MOSFET in DFN 3×3 EP package, featuring RDS(ON) < 5 mΩ at VGS = 10 V and < 8.5 mΩ at VGS = 4.5 V, 30 A continuous drain current, and low gate charge (Qg = 15.7–22.5 nC). It serves as a high-efficiency synchronous rectifier or power switch in DC/DC converters for computing and telecom POL applications.

For engineers reviewing the AON7514 datasheet, pinout, applications, or equivalent options, key selection criteria include its 4.5 V logic-level gate drive compatibility, 100% UIS-tested ruggedness, low RDS(ON) at low VGS, thermal performance (RθJC = 5.4 °C/W), and DFN 3×3 EP footprint suitability for high-density power stages.

Technical Context

The AON7514 employs AlphaMOS LV trench technology optimized for low-voltage, high-current switching. Its gate threshold voltage (1.2–2.2 V) enables reliable turn-on with 3.3 V or 4.5 V controllers, while low Qgd (3.2 nC) and fast switching (tr = 2.5 ns, tf = 4 ns) reduce switching losses in high-frequency buck converters.

It integrates a robust body diode (VSD = 0.7–1.0 V, Qrr = 13.6 nC, trr = 10.2 ns) and is fully characterized for unclamped inductive switching (UIS), supporting reliable operation in hard-switched topologies without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial/computing supplies.
RDS(ON) @ VGS=10 V< 5 mΩ - Enables ≤15 W conduction loss at 30 A, critical for high-current point-of-load stages.
RDS(ON) @ VGS=4.5 V< 8.5 mΩ - Ensures full enhancement with standard 5 V or 4.5 V gate drivers, eliminating need for level shifters.
Qg (10 V)15.7–22.5 nC - Low total gate charge reduces driver power demand and supports >1 MHz switching in compact designs.
RθJC5.4 °C/W - Enables direct heatsinking via exposed pad; allows ~23 W power dissipation at TC = 100 °C.
ID (continuous)30 A @ TC = 25 °C - Package-limited current rating suitable for single-phase CPU/GPU VRMs and server VR13.x modules.
EAS32 mJ - 100% avalanche-rated for robustness against inductive energy spikes in non-isolated converters.

Pinout & Package

Package: DFN 3×3 mm with exposed thermal pad (EP); bottom-side thermal interface required for rated power dissipation.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 7, 8Source (S)Common source connection; pins 1–4 and 7–8 are internally paralleled for low-inductance, high-current return path.
5Gate (G)Control terminal; low input capacitance (Ciss = 951 pF) minimizes driver loading and EMI during fast transitions.
6Drain (D)Main power output node; connected to exposed copper pad on bottom surface for thermal and electrical conduction to PCB ground plane.

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.2–2.2 V ensures full enhancement with 3.3 V microcontrollers or PWM controllers without gate boosting.
Low RDS(ON) at 4.5 V< 8.5 mΩ enables high efficiency in 5 V-input synchronous buck converters used in SSDs and networking ASICs.
100% UIS testedGuarantees single-pulse avalanche energy handling up to 32 mJ, improving reliability in overload or short-circuit conditions.
RoHS & halogen-freeComplies with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), enabling standard reflow assembly without baking.
Low Qgd/Qg ratioQgd = 3.2 nC / Qg ≈ 14% - improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments.

Applications

Server Point-of-Load RegulatorsTelecom Isolated DC/DC Converters

Use Scenario: High-current, multi-phase VRMs supplying CPUs and FPGAs in 1U/2U rack servers with strict thermal budgets.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter power stage, operating at 300–600 kHz with 30 A per phase.

Use Value: Sub-5 mΩ RDS(ON) at 10 V reduces conduction loss by ≥25% versus comparable 30 V MOSFETs, directly lowering junction temperature rise.

Use Scenario: Secondary-side synchronous rectification in isolated forward or LLC converters for 48 V telecom systems.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology, driven by transformer-coupled gate signal.

Use Value: 4.5 V RDS(ON) < 8.5 mΩ ensures minimal voltage drop across rectifier under light-load conditions where VGS may sag.

Industrial Motor Drive Gate DriversHigh-Density Computing Power Modules

Use Scenario: Half-bridge high-side/low-side switching in 24 V BLDC motor control inverters for factory automation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at ≤20 kHz with bootstrap gate drive.

Use Value: 100% UIS testing and 120 A pulsed current rating allow safe operation during motor stall or regenerative braking events.

Use Scenario: Compact 12 V input, 0.8–1.8 V output power modules for AI accelerators and GPU memory subsystems.

IC Role / Device Role / Timing Role: Primary switching element in stacked dual-phase buck converter with integrated inductors.

Use Value: DFN 3×3 EP package enables ≤12 mm² per phase layout area, while RθJC = 5.4 °C/W supports >40 A/in² power density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiR872DPRDS(ON) = 4.2 mΩ @ 10 V, Qg = 24.5 nC, DFN 5×6 mmLarger footprint; higher gate charge increases driver loss at >1 MHzPreferred when higher current derating margin or legacy 5×6 layout reuse is needed.
IRF7759L2TRPBFRDS(ON) = 6.2 mΩ @ 10 V, Qg = 17.5 nC, SO-8 packageSO-8 limits thermal performance (RθJA ≈ 62 °C/W); unsuitable for >15 A continuousAcceptable for lower-current (<12 A), cost-sensitive designs where DFN assembly is not available.

Compared with SiR872DP and IRF7759L2TRPBF, the AON7514 delivers best-in-class RDS(ON)/Qg ratio in a thermally optimized 3×3 mm DFN, making it optimal for space-constrained, high-frequency, high-current POL converters where thermal resistance and gate drive efficiency are critical.

Availability

AON7514 is available at Aetrix Electronics and suitable for server point-of-load regulators, telecom isolated DC/DC converters, and industrial motor drive gate drivers requiring stable component supply, consistent parametric performance, and long-term production availability.

Supply support for AON7514 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON7514 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for low-voltage, high-current DC/DC conversion with emphasis on RDS(ON) optimization at logic-level gate voltages and ruggedness in real-world switching stress conditions.

FAQ

What is the maximum continuous drain current rating for AON7514?

The AON7514 has a continuous drain current rating of 30 A at case temperature TC = 25 °C, derating to 23 A at TC = 70 °C and 12 A at TC = 100 °C. This rating is package-limited and assumes proper PCB copper area and thermal vias under the exposed pad to maintain junction temperature ≤150 °C. The AON7514 datasheet specifies these values in the Absolute Maximum Ratings table on page 1.

Does AON7514 support 3.3 V gate drive?

Yes, the AON7514 supports 3.3 V gate drive due to its low gate threshold voltage range of 1.2–2.2 V and RDS(ON) < 8.5 mΩ at VGS = 4.5 V. At 3.3 V, it achieves partial enhancement with RDS(ON) approximately 12–15 mΩ (per Figure 5), making it usable in 3.3 V controller designs where moderate conduction loss is acceptable. Full specification compliance requires ≥4.5 V.

What is the thermal resistance from junction to case (RθJC) for AON7514?

The AON7514 has a junction-to-case thermal resistance (RθJC) of 5.4 °C/W, measured with the device mounted to a large heatsink. This value enables precise thermal design when the exposed pad is soldered to a dedicated thermal plane on the PCB. The AON7514's low RθJC supports high-power operation in compact layouts where case temperature can be actively managed.

Is AON7514 suitable for synchronous rectification in isolated flyback converters?

Yes, the AON7514 is suitable for synchronous rectification in isolated flyback converters due to its low RDS(ON) at 4.5 V, fast body diode recovery (trr = 10.2 ns, Qrr = 13.6 nC), and 100% UIS testing. Its DFN 3×3 EP package provides low parasitic inductance, reducing ringing during reverse recovery. The AON7514's gate threshold and capacitance profile also support reliable timing control with common SR controller ICs.

What does "100% Rg tested" mean for AON7514?

"100% Rg tested" means every AON7514 unit undergoes production screening for gate resistance (Rg = 0.7–2.3 Ω), ensuring consistency in switching speed and gate driver interaction. This test verifies that gate resistance falls within the specified range, minimizing unit-to-unit variation in turn-on/turn-off timing and reducing risk of shoot-through in half-bridge configurations. The AON7514's tight Rg tolerance supports predictable, repeatable switching behavior in high-volume power designs.

AON7514 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
951 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 23W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN-EP (3x3)

AON7514 FAQ

1.How can I place an order for AON7514 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7514 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7514 reliable?

The price and inventory of AON7514 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7514 is usually 5 days.

3.What payment methods are accepted for AON7514?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7514 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7514?

AON7514 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7514 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7514?

For technical support, including AON7514 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7514 requirements.

6.How does Aetrix verify that AON7514 is sourced from the original manufacturer or authorized distributors?

All AON7514 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7514 meets industry standards.

7.What is the process for return or replacement of AON7514?

All AON7514 units undergo pre-shipment inspection (PSI). If there is an issue with AON7514, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7514 part is unused and in its original packaging.

Return procedure for AON7514:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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