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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7530

Name: AON7530
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7530
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7530

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: AON7530.pdf

Description:: N

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON7530 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power AlphaMOS (αMOS LV) discrete MOSFET optimized for high-efficiency DC/DC conversion. It delivers 30A continuous drain current at V_GS=10V, <4.7mΩ R_DS(ON) at 10V, and <7.2mΩ at 4.5V, with low gate charge (Q_g=27nC max) and fast switching (t_on=7ns, t_off=21ns), enabling use in point-of-load and isolated telecom power stages.

For engineers reviewing the AON7530 datasheet, pinout, applications, or equivalent options, key selection considerations include its DFN 3×3 EP package thermal performance (R_θJC=5.2°C/W), 100% UIS-tested ruggedness, and body-diode recovery characteristics (Q_rr=20.6nC, t_rr=13.5ns) critical for synchronous rectification and hard-switched topologies.

Technical Context

The AON7530 employs trench-gate αMOS LV process technology to achieve low R_DS(ON) and low Q_g, balancing conduction and switching losses in high-frequency power stages. Its gate threshold voltage (1.4–2.2V) supports 4.5V logic-level drive, while the integrated body diode exhibits controlled reverse recovery (t_rr=13.5ns, Q_rr=20.6nC) suitable for synchronous buck and LLC resonant converters.

Thermal design is enabled by the exposed-pad DFN 3×3 EP package, delivering R_θJC=5.2°C/W and R_θJA=55°C/W on standard FR-4. The device is 100% avalanche-rated (E_AS=27mJ) and 100% gate resistance (R_g) tested, ensuring robustness under transient overvoltage and gate-drive mismatch conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage compatible with 24V input rails and 30V bus systems
I_D (V_GS=10V)	30A - Continuous current rating at full gate drive, supporting high-current POL modules
R_DS(ON) (V_GS=10V)	<4.7mΩ - Low conduction loss enabling >95% efficiency in 12V→1V/30A buck converters
R_DS(ON) (V_GS=4.5V)	<7.2mΩ - Ensures strong turn-on with 5V logic or controller outputs without level-shifting
Q_g (10V)	27nC max - Enables efficient 500kHz–1MHz switching with moderate gate driver strength
t_rr / Q_rr	13.5ns / 20.6nC - Fast, low-charge body diode recovery reduces shoot-through risk in synchronous rectification
R_θJC	5.2°C/W - Exposed-pad thermal path allows direct heatsinking for sustained 24W dissipation at T_C=100°C

Pinout & Package

Package: DFN 3×3 mm with exposed thermal pad (EP), RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally paralleled drain terminals connected to exposed pad - primary current path and thermal conduction path
5	Gate (G)	Control terminal requiring <27nC total charge; sensitive to ESD; requires stable 4.5–20V drive
S (pins not numbered but labeled on top view)	Source (S)	Three source terminals (pins 1, 2, 3 per top-view diagram) - low-inductance return path for high di/dt switching

Key Features

Feature	Design Value
Trench αMOS LV process	Enables simultaneous optimization of R_DS(ON) and Q_g, reducing both conduction and switching losses in 300kHz–2MHz converters
100% UIS tested	Guarantees unclamped inductive switching ruggedness up to 27mJ, eliminating need for external snubbers in hard-switched designs
Low Q_gd/Q_g ratio	Q_gd=4nC (15% of Q_g) minimizes Miller plateau duration, improving noise immunity and dV/dt tolerance
Body diode with soft recovery	Q_rr=20.6nC and t_rr=13.5ns enable reliable synchronous rectification without excessive ringing or cross-conduction
DFN 3×3 EP package	0.55mm profile and 9mm² footprint support ultra-thin, high-density power modules with superior thermal transfer vs. SO-8

Applications

Server Point-of-Load (POL)	Telecom Isolated DC/DC
Use Scenario: High-current, high-frequency buck converter supplying core voltage to CPUs/FPGAs in 1U servers. IC Role / Device Role: High-side synchronous rectifier MOSFET in multiphase buck regulator. Use Value: Sub-5mΩ R_DS(ON) at 10V and low Q_g reduce conduction loss and gate drive power, enabling >94% efficiency at 30A/1V output.	Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converter for telecom base stations. IC Role / Device Role: Low-V_DS secondary-side switch replacing Schottky diodes. Use Value: Body diode t_rr=13.5ns and Q_rr=20.6nC minimize reverse recovery loss and EMI, improving efficiency by 2–3% over diode solutions.
Industrial Motor Drive Gate Driver	Automotive ADAS Power Supply
Use Scenario: Half-bridge high-side switch in 24V BLDC motor gate driver IC auxiliary supply. IC Role / Device Role: Input-stage MOSFET in buck converter powering gate driver bias rails. Use Value: 30V V_DS rating and 100% UIS testing ensure reliability during load dump transients and inductive kickback events.	Use Scenario: Compact 12V-to-3.3V/5V buck converter in radar or camera ECU power management. IC Role / Device Role: Primary switching FET in space-constrained automotive power module. Use Value: DFN 3×3 EP package enables <10mm² layout area while maintaining R_θJC=5.2°C/W for operation up to 105°C ambient.

Server Point-of-Load (POL)

Telecom Isolated DC/DC

Use Scenario: High-current, high-frequency buck converter supplying core voltage to CPUs/FPGAs in 1U servers.

IC Role / Device Role: High-side synchronous rectifier MOSFET in multiphase buck regulator.

Use Value: Sub-5mΩ R_DS(ON) at 10V and low Q_g reduce conduction loss and gate drive power, enabling >94% efficiency at 30A/1V output.

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converter for telecom base stations.

IC Role / Device Role: Low-V_DS secondary-side switch replacing Schottky diodes.

Use Value: Body diode t_rr=13.5ns and Q_rr=20.6nC minimize reverse recovery loss and EMI, improving efficiency by 2–3% over diode solutions.

Industrial Motor Drive Gate Driver

Automotive ADAS Power Supply

Use Scenario: Half-bridge high-side switch in 24V BLDC motor gate driver IC auxiliary supply.

IC Role / Device Role: Input-stage MOSFET in buck converter powering gate driver bias rails.

Use Value: 30V V_DS rating and 100% UIS testing ensure reliability during load dump transients and inductive kickback events.

Use Scenario: Compact 12V-to-3.3V/5V buck converter in radar or camera ECU power management.

IC Role / Device Role: Primary switching FET in space-constrained automotive power module.

Use Value: DFN 3×3 EP package enables <10mm² layout area while maintaining R_θJC=5.2°C/W for operation up to 105°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40V V_DS, 4.5mΩ @ 10V, Q_g=31nC, same DFN 3.3×3.3mm package	Higher voltage margin suits 36V industrial inputs; slightly higher Q_g increases gate drive loss	Select when 40V rating is required for wider input range; verify gate driver capability for +13% Q_g
Vishay SiR872DP	30V V_DS, 4.2mΩ @ 10V, Q_g=24nC, PowerPAK® 3.3×3.3mm package	Lower Q_g improves high-frequency efficiency; different pinout (G/S/D vs. AON7530's S/G/D/S configuration)	Prefer for ultra-high-frequency (>1MHz) designs; requires PCB layout revision due to non-identical pin mapping

Compared with BSC014N04LS6 and SiR872DP, the AON7530 offers the lowest R_DS(ON) × Q_g figure-of-merit among 30V DFN options, making it optimal for thermally constrained, medium-frequency POL applications where conduction loss dominates.

Availability

AON7530 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom isolated DC/DC supplies, and industrial motor drive auxiliary power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for AON7530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON7530 belongs to AOS' αMOS LV (Low Voltage) trench MOSFET product line, engineered specifically for high-current, high-efficiency DC/DC conversion below 40V, emphasizing low R_DS(ON), low Q_g, and ruggedness in compact DFN packages.

FAQ

What is the maximum continuous drain current rating for the AON7530?

The AON7530 is rated for 30A continuous drain current (I_D) at T_C=25°C with V_GS=10V. At elevated case temperatures, derating applies: 23A at T_C=70°C and 19A at T_C=100°C per the datasheet's current de-rating curve. This rating is package-limited and assumes proper PCB copper area and thermal vias for the exposed pad.

Does the AON7530 support 5V gate drive in practical applications?

Yes, the AON7530 supports robust 5V gate drive: its R_DS(ON) remains <7.2mΩ at V_GS=4.5V, and gate threshold voltage is specified 1.4–2.2V (typical 1.8V). This ensures full enhancement with standard 5V logic or PWM controller outputs, eliminating need for gate drivers in many low-to-medium frequency applications.

How is the thermal performance of the AON7530 validated in real PCB layouts?

The AON7530's R_θJA=55°C/W is measured on a 1in² FR-4 board with 2oz copper; R_θJC=5.2°C/W reflects direct junction-to-case conduction via the exposed pad. For production designs, thermal performance depends on solder coverage, thermal via count (≥9 recommended), and copper area under the pad - validated using JEDEC JESD51-14 standards per the AOS datasheet test methodology.

Is the AON7530 suitable for synchronous rectification in flyback converters?

Yes, the AON7530 is well-suited for synchronous rectification in flyback converters due to its fast, low-charge body diode (t_rr=13.5ns, Q_rr=20.6nC) and low R_DS(ON). Its 30V rating matches typical 12–24V output stages, and 100% UIS testing ensures reliability during output short-circuit or no-load transient events common in flyback topologies.

What does "100% Rg tested" mean for the AON7530?

"100% Rg tested" means every AON7530 unit undergoes individual gate resistance (R_g) screening during final test, with values guaranteed between 0.7Ω and 2.1Ω. This ensures consistent gate drive timing and switching behavior across production lots, critical for parallel operation and predictable EMI performance in high-volume power supply manufacturing.

AON7530 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1320 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 24W

Operating Temperature:: -55°C ~ 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3x3)

AON7530 FAQ

1.How can I place an order for AON7530 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7530 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7530 reliable?

The price and inventory of AON7530 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7530 is usually 5 days.

3.What payment methods are accepted for AON7530?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7530 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7530?

AON7530 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7530 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7530?

For technical support, including AON7530 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7530 requirements.

6.How does Aetrix verify that AON7530 is sourced from the original manufacturer or authorized distributors?

All AON7530 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7530 meets industry standards.

7.What is the process for return or replacement of AON7530?

All AON7530 units undergo pre-shipment inspection (PSI). If there is an issue with AON7530, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7530 part is unused and in its original packaging.

Return procedure for AON7530:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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