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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7566

Name: AON7566
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7566
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7566

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: AON7566.pdf

Description:: MOSFET N-CHANNEL 30V 34A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON7566 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power AlphaMOS (αMOS LV) MOSFET optimized for high-efficiency load switching in portable power systems, featuring R_DS(ON) < 3.7 mΩ at V_GS = 10 V, 34 A continuous drain current, and DFN 3×3 EP package with exposed thermal pad.

For engineers reviewing the AON7566 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 57–80 nC at 10 V), robust UIS rating, HBM Class 2 ESD protection, and thermal performance validated under real-world load-switch transient conditions.

Technical Context

The AON7566 employs trench-based αMOS LV process technology to achieve ultra-low on-resistance while maintaining fast switching characteristics-evidenced by t_D(on) = 7.5 ns, t_f = 13 ns, and C_iss = 3020 pF at V_DS = 15 V. Its gate threshold voltage (1.4–2.4 V) enables reliable turn-on with 4.5 V logic-level drive.

Thermally, it delivers 12 W power dissipation at T_C = 100 °C (R_θJC = 4.2 °C/W), and supports 100% UIS and R_g testing per production lot-critical for battery protection circuits where avalanche energy (E_AS = 45 mJ) and pulsed current (I_DM = 135 A) must be guaranteed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 3S Li-ion battery packs (12.6 V nominal) and USB PD 3.0 auxiliary rails.
R_DS(ON) @ 10 V	< 3.7 mΩ - Enables <10 mW conduction loss at 20 A, reducing thermal stress in compact load switches.
I_D Continuous	34 A - Package-limited current rating suitable for high-current NB battery pack main FETs and e-fuse applications.
Q_g @ 10 V	57–80 nC - Low gate charge minimizes driver power and switching losses in 500 kHz–1 MHz DC/DC load switches.
E_AS	45 mJ - Guaranteed unclamped inductive switching energy supports robust overcurrent fault handling without external snubbers.
R_θJC	4.2 °C/W - Exposed pad thermal path enables direct heatsinking to PCB ground plane for sustained 12 W operation.

Pinout & Package

Package: DFN 3×3 mm with exposed thermal pad (EP), RoHS and halogen-free compliant. Thermal pad must be soldered to PCB copper for rated power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally bonded to reduce source inductance and improve switching stability.
5, 6	Drain (D)	Main power output node; connected to exposed thermal pad for low-inductance, high-current path and thermal conduction.
G	Gate (G)	Control input; requires <2.4 V threshold for turn-on; gate resistance R_g = 1–3 Ω ensures stable switching without oscillation.

Key Features

Feature	Design Value
Trench αMOS LV Process	Enables sub-4 mΩ R_DS(ON) at 30 V while maintaining >10⁶ cycle reliability in portable power switching.
100% UIS Tested	Every production unit validated for 45 mJ avalanche energy-eliminates need for batch-level qualification sampling.
HBM Class 2 ESD Protection	Withstands ±2 kV human-body-model discharge, enabling safe handling during SMT assembly and board-level integration.
Optimized for Load Switch	Low Q_gd/Q_g ratio (≈0.18) and fast t_r/t_f reduce Miller-induced shoot-through risk in high-side switch configurations.

Applications

Notebook Battery Pack Protection	USB-C Power Delivery E-Fuse
Use Scenario: Primary FET in smart battery pack protection IC (e.g., BQ series) controlling charge/discharge paths and overcurrent cutoff. IC Role / Device Role / Timing Role: High-side load switch with fast fault response (<1 µs) and bidirectional current sensing capability via R_DS(ON) monitoring. Use Value: Sub-4 mΩ on-resistance reduces voltage drop across battery terminals, preserving state-of-charge accuracy and extending runtime by up to 1.2% at 20 A load.	Use Scenario: Overcurrent protection FET in USB-C PD sink port, interrupting power delivery within 10 µs upon 5 A fault detection. IC Role / Device Role / Timing Role: Low-voltage, high-current e-fuse element controlled by PD controller (e.g., FUSB302), requiring minimal gate drive overhead. Use Value: 57–80 nC total gate charge enables full turn-off using standard 3.3 V GPIO, eliminating need for level-shifted gate drivers in space-constrained Type-C modules.
Industrial Portable Tool Battery Management	Medical Portable Monitor Power Sequencing
Use Scenario: Main isolation switch in 20–40 V cordless power tool battery packs, managing motor start surge and hot-swap insertion. IC Role / Device Role / Timing Role: Bidirectional load switch supporting reverse-current blocking during cell balancing and pack reconfiguration. Use Value: 135 A pulsed drain current (I_DM) handles 3× motor stall surges without derating, while 100% R_g test ensures consistent switching timing across temperature.	Use Scenario: Sequenced power enable for multi-rail medical monitors (e.g., 3.3 V, 5 V, 12 V subsystems), preventing inrush-induced brownout. IC Role / Device Role / Timing Role: Controlled soft-start switch with body diode forward voltage (V_SD = 0.68–1.0 V) used for reverse-polarity protection during rail sequencing. Use Value: Body diode recovery time (t_rr = 12 ns) and Q_rr = 20 nC minimize cross-conduction losses during staggered rail activation, improving system startup stability.

Notebook Battery Pack Protection

USB-C Power Delivery E-Fuse

Use Scenario: Primary FET in smart battery pack protection IC (e.g., BQ series) controlling charge/discharge paths and overcurrent cutoff.

IC Role / Device Role / Timing Role: High-side load switch with fast fault response (<1 µs) and bidirectional current sensing capability via R_DS(ON) monitoring.

Use Value: Sub-4 mΩ on-resistance reduces voltage drop across battery terminals, preserving state-of-charge accuracy and extending runtime by up to 1.2% at 20 A load.

Use Scenario: Overcurrent protection FET in USB-C PD sink port, interrupting power delivery within 10 µs upon 5 A fault detection.

IC Role / Device Role / Timing Role: Low-voltage, high-current e-fuse element controlled by PD controller (e.g., FUSB302), requiring minimal gate drive overhead.

Use Value: 57–80 nC total gate charge enables full turn-off using standard 3.3 V GPIO, eliminating need for level-shifted gate drivers in space-constrained Type-C modules.

Industrial Portable Tool Battery Management

Medical Portable Monitor Power Sequencing

Use Scenario: Main isolation switch in 20–40 V cordless power tool battery packs, managing motor start surge and hot-swap insertion.

IC Role / Device Role / Timing Role: Bidirectional load switch supporting reverse-current blocking during cell balancing and pack reconfiguration.

Use Value: 135 A pulsed drain current (I_DM) handles 3× motor stall surges without derating, while 100% R_g test ensures consistent switching timing across temperature.

Use Scenario: Sequenced power enable for multi-rail medical monitors (e.g., 3.3 V, 5 V, 12 V subsystems), preventing inrush-induced brownout.

IC Role / Device Role / Timing Role: Controlled soft-start switch with body diode forward voltage (V_SD = 0.68–1.0 V) used for reverse-polarity protection during rail sequencing.

Use Value: Body diode recovery time (t_rr = 12 ns) and Q_rr = 20 nC minimize cross-conduction losses during staggered rail activation, improving system startup stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(ON) = 3.2 mΩ @ 10 V; higher Q_g = 92 nC; SO-8 package (larger footprint, lower thermal density).	Preferred where board area allows larger package and higher gate drive capability exists.	Select SiR872DP only if thermal interface design accommodates SO-8's higher R_θJA (50 °C/W vs. AON7566's 55 °C/W on same board).
DMN3028LSD	R_DS(ON) = 3.0 mΩ @ 10 V; no UIS rating specified; DFN 3×3 but lacks 100% R_g test documentation.	Suitable for cost-sensitive consumer applications where avalanche robustness is not required.	Choose DMN3028LSD only when system-level fault testing confirms absence of inductive transients; not recommended for battery pack primary protection.

Compared with SiR872DP and DMN3028LSD, the AON7566 uniquely combines guaranteed UIS performance, 100% R_g screening, and DFN 3×3 thermal efficiency-making it the preferred choice for safety-critical, space-constrained load switch designs requiring field-proven ruggedness.

Availability

AON7566 is available at Aetrix Electronics and suitable for notebook battery pack protection, USB-C power delivery e-fuse, and industrial portable tool battery management requiring stable component supply and long-term lifecycle support.

Supply support for AON7566 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON7566 belongs to AOS's AlphaMOS LV family-designed specifically for low-voltage, high-current load switching in battery-powered systems where efficiency, thermal density, and production-test reliability are critical.

FAQ

What is the maximum continuous drain current rating for the AON7566?

The AON7566 has a maximum continuous drain current (I_D) of 34 A at T_C = 25 °C, limited by package thermal capacity-not silicon capability. At T_C = 100 °C, the derated current is 23 A per Figure 13. This rating assumes proper PCB copper area and thermal pad soldering per AOS layout guidelines.

Does the AON7566 support 4.5 V logic-level gate drive?

Yes, the AON7566 supports 4.5 V logic-level gate drive with R_DS(ON) < 5.2 mΩ and guaranteed turn-on at V_GS(th) = 1.4–2.4 V. Its transfer characteristics (Figure 2) show strong transconductance (g_FS = 90 S) at 4.5 V, making it suitable for direct microcontroller GPIO control without level-shifting.

Is the AON7566 qualified for automotive applications?

No, the AON7566 is explicitly designed and qualified for the consumer market only. The datasheet states: "THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED." It is not AEC-Q101 qualified.

What is the thermal resistance from junction to case (R_θJC) for the AON7566?

The AON7566 has an R_θJC of 4.2 °C/W, measured from junction to the exposed thermal pad. This value assumes full solder coverage of the EP pad to a minimum 1-in² 2-oz copper area. Effective thermal design requires this pad to be connected to internal ground planes or external heatsinks.

How is the AON7566 tested for unclamped inductive switching (UIS) robustness?

Every AON7566 unit undergoes 100% UIS testing per production lot using standardized unclamped inductive switching (UIS) test circuitry (Figure C). Each device is stressed at E_AS = 45 mJ (L = 0.1 mH), verifying avalanche capability without degradation-ensuring consistent field reliability in battery protection and motor drive applications.

AON7566 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaMOS

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3020 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3x3)

AON7566 FAQ

1.How can I place an order for AON7566 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7566 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7566 reliable?

The price and inventory of AON7566 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7566 is usually 5 days.

3.What payment methods are accepted for AON7566?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7566 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7566?

AON7566 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7566 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7566?

For technical support, including AON7566 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7566 requirements.

6.How does Aetrix verify that AON7566 is sourced from the original manufacturer or authorized distributors?

All AON7566 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7566 meets industry standards.

7.What is the process for return or replacement of AON7566?

All AON7566 units undergo pre-shipment inspection (PSI). If there is an issue with AON7566, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7566 part is unused and in its original packaging.

Return procedure for AON7566:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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