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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7568

Name: AON7568
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7568
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7568

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: AON7568.pdf

Description:: MOSFET N-CH 30V 25A/32A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON7568 from Alpha & Omega Semiconductor is a 30V N-Channel MOSFET in DFN 3×3 EP package, optimized for high-current load switching with R_DS(ON) < 4.6 mΩ at V_GS = 10 V and < 7.2 mΩ at 4.5 V, rated for 32 A continuous drain current, and used in notebook battery pack charging/discharging circuits.

For engineers reviewing the AON7568 datasheet, pinout, applications, or equivalent options, key selection factors include its low on-resistance at 4.5 V gate drive, 100% UIS testing, HBM Class 2 ESD protection, and thermal performance validated under junction-to-case (R_θJC = 4.5 °C/W) and junction-to-ambient (R_θJA = 55 °C/W) conditions.

Technical Context

The AON7568 employs a trench-gate silicon process optimized for fast switching and low conduction loss in synchronous buck, load switch, and battery protection topologies. Its gate charge profile (Q_g = 40–60 nC at 10 V, Q_g(4.5 V) = 18–30 nC) supports efficient operation with standard gate drivers.

It features a robust body diode with t_rr = 10.5 ns and Q_rr = 16 nC at I_F = 20 A, di/dt = 500 A/µs, and is fully characterized for unclamped inductive switching (UIS), with avalanche energy E_AS = 45 mJ at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 3.3 V–24 V system rails and notebook battery packs (e.g., 3S Li-ion).
I_D (V_GS = 10 V)	32 A - Continuous current rating enabling high-power load switching without external heatsink at TC ≤ 100 °C.
R_DS(ON) (V_GS = 4.5 V)	< 7.2 mΩ - Ensures low conduction loss when driven by 4.5 V logic or battery-powered controllers.
Q_g(4.5 V)	18–30 nC - Enables fast turn-on with minimal gate drive power in high-frequency DC-DC and load-switch applications.
R_θJC	4.5 °C/W - Confirms effective heat transfer to PCB copper pad or external heatsink, supporting >28 W power dissipation at T_C = 100 °C.
E_AS	45 mJ - Validated single-pulse avalanche capability allows safe operation during transient overcurrent or inductive kick events.

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad soldered to PCB ground plane for optimal heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source (S)	Multi-pin source connection reduces parasitic inductance and improves current sharing in high-di/dt switching.
8	Drain (D)	Exposed pad - primary thermal and electrical path to PCB ground plane; must be soldered for rated current and thermal performance.
G (Pin 1 side marking)	Gate (G)	Single gate input located adjacent to corner; requires low-impedance routing to minimize ringing and ensure stable switching.

Key Features

Feature	Design Value
100% UIS tested	Guarantees ruggedness against unclamped inductive transients in battery disconnect and hot-swap circuits.
HBM Class 2 ESD protection	Withstands ≥2 kV human-body-model ESD, reducing need for external protection in portable systems.
Optimized for load switch	Low R_DS(ON) at 4.5 V and fast switching (t_on ≈ 16.5 ns, t_off ≈ 48 ns) minimize voltage drop and transition losses.
RoHS and halogen-free	Complies with environmental regulations for consumer electronics including notebooks and tablets.

Applications

Battery Protection Circuit	Notebook Battery Pack
Use Scenario: Bidirectional current control between battery cells and system bus during charge/discharge cycles with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Primary N-channel power switch in high-side or low-side configuration, controlled by battery management IC. Use Value: Low R_DS(ON) at 4.5 V enables efficient operation directly from battery voltage without level-shifting, minimizing power loss and thermal rise.	Use Scenario: Load switching for auxiliary power rails (e.g., USB-C PD, display backlight, SSD) in ultrabooks and 2-in-1 devices. IC Role / Device Role / Timing Role: High-current load switch enabling rapid on/off control with minimal voltage droop and fast response to enable signals. Use Value: 32 A rating and 100% UIS testing support reliable hot-plug and fault recovery in compact, thermally constrained designs.
Power Bank Output Stage	USB-C Power Delivery Sink
Use Scenario: Output switching for multi-cell power banks delivering up to 20 V/5 A, requiring reverse current blocking and thermal resilience. IC Role / Device Role / Timing Role: Synchronous rectifier or main output switch managing bidirectional power flow and reverse polarity protection. Use Value: Body diode V_SD = 0.7–1.0 V and t_rr = 10.5 ns reduce conduction loss and switching noise during reverse recovery.	Use Scenario: Input power path management in USB-C PD sink devices accepting variable input (5–20 V) while maintaining low insertion loss. IC Role / Device Role / Timing Role: Low-R_DS(ON) pass transistor in ideal diode or OR-ing configuration for redundant input sources. Use Value: R_DS(ON) < 7.2 mΩ at 4.5 V ensures < 150 mV drop at 20 A, meeting USB-C PD voltage tolerance requirements.

Battery Protection Circuit

Notebook Battery Pack

Use Scenario: Bidirectional current control between battery cells and system bus during charge/discharge cycles with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Primary N-channel power switch in high-side or low-side configuration, controlled by battery management IC.

Use Value: Low R_DS(ON) at 4.5 V enables efficient operation directly from battery voltage without level-shifting, minimizing power loss and thermal rise.

Use Scenario: Load switching for auxiliary power rails (e.g., USB-C PD, display backlight, SSD) in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: High-current load switch enabling rapid on/off control with minimal voltage droop and fast response to enable signals.

Use Value: 32 A rating and 100% UIS testing support reliable hot-plug and fault recovery in compact, thermally constrained designs.

Power Bank Output Stage

USB-C Power Delivery Sink

Use Scenario: Output switching for multi-cell power banks delivering up to 20 V/5 A, requiring reverse current blocking and thermal resilience.

IC Role / Device Role / Timing Role: Synchronous rectifier or main output switch managing bidirectional power flow and reverse polarity protection.

Use Value: Body diode V_SD = 0.7–1.0 V and t_rr = 10.5 ns reduce conduction loss and switching noise during reverse recovery.

Use Scenario: Input power path management in USB-C PD sink devices accepting variable input (5–20 V) while maintaining low insertion loss.

IC Role / Device Role / Timing Role: Low-R_DS(ON) pass transistor in ideal diode or OR-ing configuration for redundant input sources.

Use Value: R_DS(ON) < 7.2 mΩ at 4.5 V ensures < 150 mV drop at 20 A, meeting USB-C PD voltage tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(ON) = 2.5 mΩ @ 10 V (lower), but only 25 A rated; no UIS test data published.	Higher current density but less rugged for inductive loads; better suited for fixed 10 V gate drive.	Select when gate drive is stable ≥10 V and avalanche stress is absent.
SiR872DP-T1-GE3	R_DS(ON) = 5.2 mΩ @ 10 V, 30 A rated, R_θJA = 49 °C/W (better ambient cooling), no HBM Class 2 rating.	Superior thermal performance in still-air environments but lacks ESD hardening for handheld integration.	Select when board-level ESD protection is already implemented and ambient cooling dominates thermal design.

Compared with DMN3025LSD-13 and SiR872DP-T1-GE3, the AON7568 uniquely combines 32 A rating, 4.5 V drive capability, 100% UIS validation, and HBM Class 2 ESD - making it preferred for battery-pack-integrated load switches where gate voltage headroom and system-level ruggedness are critical.

Availability

AON7568 is available at Aetrix Electronics and suitable for notebook battery protection, USB-C PD sink power path, and power bank output stage applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for AON7568 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON7568 belongs to AOS's DFN-packaged TrenchMOS® family, designed specifically for high-current, low-voltage load switching in space-constrained portable electronics where thermal efficiency and gate-drive flexibility are essential.

FAQ

What is the maximum continuous drain current for AON7568 at 100°C case temperature?

The AON7568 supports 28 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 3×3 EP package and assumes proper PCB copper area and soldering of the exposed drain pad. The AON7568 datasheet confirms this value under steady-state conditions with junction temperature capped at 150 °C.

Does AON7568 require a gate resistor for stable switching in load-switch applications?

The AON7568 has a typical gate resistance (R_g) of 1.2–4 Ω, but an external gate resistor is recommended to dampen ringing and control dV/dt during turn-on/turn-off. For 4.5 V drive with 20 A load, a 3–10 Ω resistor balances switching speed and EMI. The AON7568 evaluation data shows clean waveforms with R_GEN = 3 Ω in resistive switching tests.

Is AON7568 suitable for reverse polarity protection in battery-powered systems?

Yes - the AON7568 can be configured in low-side or high-side orientation for reverse polarity protection. Its low R_DS(ON) (< 7.2 mΩ at 4.5 V) minimizes forward voltage drop, and its body diode V_SD = 0.7–1.0 V provides inherent reverse-blocking capability when oriented correctly. The AON7568 datasheet validates this use in battery charging/discharging applications.

What is the avalanche energy rating of AON7568 and how is it tested?

The AON7568 is rated for E_AS = 45 mJ at T_J = 25 °C, measured using unclamped inductive switching (UIS) with L = 0.1 mH. Each AON7568 unit undergoes 100% UIS testing per the datasheet, ensuring single-pulse avalanche robustness in real-world overcurrent events such as hot-plug or short-circuit faults.

How does the thermal performance of AON7568 compare between junction-to-case and junction-to-ambient metrics?

The AON7568 has R_θJC = 4.5 °C/W and R_θJA = 55 °C/W (measured on 1 in² FR-4, 2 oz Cu). This 12× difference highlights that thermal performance is highly dependent on PCB layout: the exposed drain pad must be soldered to a large copper area to realize the lower R_θJC value. The AON7568 datasheet emphasizes that R_θJA is board-dependent and not intrinsic to the device itself.

AON7568 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2270 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3x3)

AON7568 FAQ

1.How can I place an order for AON7568 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7568 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7568 reliable?

The price and inventory of AON7568 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7568 is usually 5 days.

3.What payment methods are accepted for AON7568?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7568 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7568?

AON7568 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7568 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7568?

For technical support, including AON7568 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7568 requirements.

6.How does Aetrix verify that AON7568 is sourced from the original manufacturer or authorized distributors?

All AON7568 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7568 meets industry standards.

7.What is the process for return or replacement of AON7568?

All AON7568 units undergo pre-shipment inspection (PSI). If there is an issue with AON7568, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7568 part is unused and in its original packaging.

Return procedure for AON7568:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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