Alpha & Omega Semiconductor Inc. AON7752

Overview

AON7752 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power MOSFET in DFN 3×3 EP package, featuring R_DS(ON) < 8.2 mΩ at V_GS = 10 V and < 14.5 mΩ at V_GS = 4.5 V, 16 A continuous drain current, integrated Schottky body diode (SRFET), and 100% UIS-tested ruggedness for high-efficiency DC/DC converters in computing and telecom power supplies.

For engineers reviewing the AON7752 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g = 11–15 nC @ 10 V), fast switching (t_r = 2.5 ns, t_f = 3 ns), soft-recovery diode performance (t_rr = 11.5 ns, Q_rr = 12.5 nC), and thermal resistance R_θJC = 6 °C/W for compact high-power-density designs.

Technical Context

The AON7752 implements AlphaMOS LV trench technology optimized for low-voltage, high-current synchronous rectification. Its integrated Schottky-replacement body diode enables soft recovery with t_rr = 11.5 ns and Q_rr = 12.5 nC under IF = 16 A, dI/dt = 500 A/µs conditions, reducing switching losses in hard-switched topologies.

It supports gate drive down to 4.5 V with R_DS(ON) < 14.5 mΩ, enabling compatibility with 5 V and 3.3 V logic-level controllers. The device is rated for V_GS = ±20 V, features g_FS = 62 S, and delivers avalanche energy E_AS = 2 mJ with 100% UIS testing per JEDEC JESD22-A115.

Key Specifications

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad for direct PCB copper connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC014N04LS6 and SiR872DP, the AON7752 offers superior soft-recovery diode integration and lower gate charge for high-frequency synchronous rectification, while maintaining competitive R_DS(ON) in a compact DFN 3×3 EP package ideal for space-constrained POL modules.

Availability

AON7752 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial point-of-load modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON7752 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON7752 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for high-efficiency, high-current, low-voltage synchronous rectification in DC/DC converters where thermal density, switching speed, and body-diode quality are critical.

FAQ

What is the maximum continuous drain current rating for the AON7752 at 100°C case temperature?

The AON7752 supports 12 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 3×3 EP package with R_θJC = 6 °C/W. At T_C = 25°C, the rating increases to 16 A. Designers must verify PCB copper area and airflow to sustain target current without exceeding T_J(max) = 150°C. The AON7752 datasheet provides de-rating curves in Figure 13.

Does the AON7752 have an integrated Schottky diode, and how does it differ from a standard body diode?

Yes, the AON7752 integrates a Schottky-replacement body diode branded SRFET™, delivering soft reverse recovery with t_rr = 11.5 ns and Q_rr = 12.5 nC - significantly faster and lower charge than conventional silicon body diodes. This reduces voltage spikes and EMI in synchronous rectifier applications. Unlike discrete Schottky diodes, the SRFET is monolithically integrated, eliminating parasitic inductance and assembly cost. The AON7752's SRFET performance is validated across temperature and current per datasheet Figure 6.

What gate drive voltage range is supported by the AON7752, and what is its gate threshold voltage?

The AON7752 supports gate-source voltage from –20 V to +20 V, with gate threshold voltage V_GS(th) specified as 1.5–2.5 V (typical 2.0 V) at T_J = 25°C. It fully enhances at V_GS = 4.5 V, delivering R_DS(ON) < 14.5 mΩ - making it compatible with 5 V and 3.3 V logic-level controllers. Gate drive design must limit dV/dt to avoid false turn-on; the AON7752's Q_gd = 2.6 nC helps suppress Miller-induced oscillation.

Is the AON7752 suitable for unclamped inductive switching (UIS) applications, and what is its rated avalanche energy?

Yes, the AON7752 is 100% UIS tested per JEDEC JESD22-A115, with rated single-pulse avalanche energy E_AS = 2 mJ at T_J = 25°C. This ruggedness supports reliable operation in non-isolated DC/DC converters subject to load dump or short-circuit transients. The device's avalanche current I_AS = 12 A and V_DS spike tolerance are confirmed in Figure 14 of the AON7752 datasheet, enabling robust design without external clamping circuits.

What is the thermal resistance from junction to case (R_θJC) for the AON7752, and how should it be used in thermal design?

The AON7752 has R_θJC = 6 °C/W, measured with the device mounted to a large heatsink per Note F. This value applies when the exposed pad is soldered to substantial PCB copper (≥1 in², 2 oz.) acting as a thermal plane. Designers use R_θJC to calculate junction temperature rise above case temperature: ΔT_J-C = P_D × 6 °C/W. For ambient-referenced design, R_θJA = 75 °C/W (on 1 in² FR-4, 2 oz. Cu) is used instead. Both values are provided in the AON7752 Thermal Characteristics table.