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Alpha & Omega Semiconductor Inc. AONR21305C
- Part No.:
- AONR21305C
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
AONR21305C.pdf
- Description:
- MOSFET P-CH 30V 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,450
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Product details
Overview
AONR21305C from Alpha & Omega Semiconductor is a 30V P-channel MOSFET optimized for high-current load switching and battery protection circuits, featuring RDS(ON) < 6.5 mΩ at VGS = −10 V, −34 A continuous drain current, and DFN 3×3 EP package with exposed thermal pad. It supports notebook AC-in load switching and bidirectional battery charge/discharge control.
For engineers reviewing the AONR21305C datasheet, pinout, applications, or equivalent options, key selection criteria include its −30 V VDS, low gate charge (Qg(10V) = 70–110 nC), avalanche-rated ruggedness (EAS = 97 mJ), and thermal performance (RθJC = 3 °C/W).
Technical Context
This P-channel MOSFET uses advanced trench technology to achieve low on-resistance and high current density in a compact DFN package. Its gate threshold voltage (−1.3 to −2.3 V) enables robust turn-on with standard logic-level drive, while 100% UIS and Rg testing ensure production reliability under unclamped inductive stress.
The device operates across −55 to 150 °C junction temperature range and delivers stable RDS(ON) up to 125 °C (normalized to 1.4× typ). Its body diode exhibits low forward voltage (VSD = −0.7 to −1.0 V at IS = −1 A) and fast recovery (trr = 15 ns, Qrr = 34 nC), supporting efficient synchronous rectification and reverse-current blocking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum drain-source blocking voltage for 12/15/24 V rail applications. |
| ID (VGS = −10 V) | −34 A - Continuous current capability at TC = 100 °C, suitable for high-power load switches. |
| RDS(ON) (VGS = −10 V) | < 6.5 mΩ - Enables <1 W conduction loss at 20 A, reducing thermal design burden. |
| RDS(ON) (VGS = −4.5 V) | < 9.8 mΩ - Ensures usable on-resistance with 4.5 V logic or battery-backed gate drive. |
| Qg(10V) | 70–110 nC - Gate charge level defining switching energy and driver sizing for ≤1 MHz operation. |
| EAS | 97 mJ - Single-pulse avalanche energy rating confirming ruggedness in inductive load transients. |
| RθJC | 3 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting for >16 W dissipation. |
Pinout & Package
Package: DFN 3×3 mm with exposed thermal pad (EP); bottom-side thermal interface required for rated power handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 8, 7, 6, 5 (all except Pin 1) | Drain (D) | Internally paralleled drain terminals - connect all to PCB copper pour for low-inductance, high-current path and thermal conduction. |
| Pin 1 | Gate (G) | Control input - requires low-impedance gate driver due to 2.7–5.4 Ω gate resistance and 4400 pF Ciss. |
| Exposed Pad (EP) | Source (S) | Thermally and electrically connected to source - must be soldered to large ground plane for RθJC = 3 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced Trench Process | Delivers <6.5 mΩ RDS(ON) in 3×3 mm footprint - 30% lower on-resistance than prior-gen P-ch devices at same size. |
| 100% UIS Tested | Guarantees single-pulse avalanche survival up to 97 mJ - eliminates need for external snubbers in DC-DC and motor drive loads. |
| 100% Rg Tested | Ensures gate resistance between 2.7–5.4 Ω - critical for predictable switching timing and EMI control in high-speed switching. |
| RoHS & Halogen-Free | Complies with IPC-1752A Class 2 material declarations - supports green manufacturing and export compliance without derating. |
Applications
| Notebook AC-In Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Hot-swap insertion of AC adapter into ultrabook mainboard with automatic isolation during fault conditions. IC Role / Device Role / Timing Role: High-side P-channel switch controlling 19 V input rail; activated by system PMIC upon valid adapter detection. Use Value: Low RDS(ON) minimizes voltage drop (<65 mV at 10 A), preserving input regulation margin; avalanche rating handles plug-in surge transients. |
Use Scenario: Bidirectional current control in Li-ion battery pack for charge enable/disable and discharge cutoff during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled stack; placed between battery negative and system ground. Use Value: −34 A rating supports 3C+ discharge pulses; fast body diode (trr = 15 ns) prevents cross-conduction during charge/discharge state transitions. |
| USB-C Power Delivery Sink | Industrial 24 V DC Power Sequencing |
Use Scenario: Input power path management in USB-C PD sink devices requiring 20 V/5 A support with reverse-voltage and overcurrent protection. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected input switch; controlled by PD controller via logic-level gate signal. Use Value: RDS(ON) < 9.8 mΩ at −4.5 V ensures <50 mV drop at full load - maintains PD contract voltage tolerance. |
Use Scenario: Controlled ramp-up of 24 V auxiliary rails in programmable logic controllers, preventing inrush current damage to downstream regulators. IC Role / Device Role / Timing Role: Soft-start enabled high-side switch; gate driven through RC network to limit dI/dt during turn-on. Use Value: 100% UIS tested ruggedness withstands relay-coil flyback and solenoid inductive kickback without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | −20 V VDS, RDS(ON) = 115 mΩ @ −4.5 V, SOT-23 package, 3.3 A ID | Lower voltage/current rating; suited only for sub-5 A logic-level loads, not notebook or battery-pack scale. | Select when board space is constrained and power levels are ≤2 W; not a drop-in replacement for AONR21305C. |
| DMG1012TQ-7 | −20 V VDS, RDS(ON) = 22 mΩ @ −4.5 V, DFN 2×2 mm, 6.5 A ID | Half the current capacity and 3.5× higher RDS(ON); lacks UIS rating and thermal pad optimization. | Use for cost-sensitive, low-power industrial sensors or IoT nodes where 20 V max and <7 A peak suffice. |
Compared with Si2301DDS-T1-GE3 and DMG1012TQ-7, the AONR21305C provides 5× higher current, 30× lower on-resistance at −4.5 V, and certified avalanche ruggedness - making it uniquely suitable for high-reliability, high-power P-channel switching where thermal and transient robustness are mandatory.
Availability
AONR21305C is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and industrial 24 V DC power sequencing requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for AONR21305C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AONR21305C belongs to AOS's DFN-packaged P-channel trench MOSFET product line, engineered specifically for high-current, low-voltage load switching and battery management systems demanding minimal conduction loss and proven transient ruggedness.
FAQ
What is the maximum continuous drain current rating for AONR21305C at 100 °C case temperature?
The AONR21305C supports −34 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper thermal management via the exposed pad soldered to a sufficient copper area. At higher case temperatures, current must be de-rated per Figure 13 in the datasheet.
Does AONR21305C have an integrated Schottky body diode?
No, the AONR21305C uses a standard MOSFET body diode formed by its P-channel structure. Its body diode forward voltage is −0.7 to −1.0 V at −1 A, with reverse recovery time trr = 15 ns and Qrr = 34 nC. It is not a Schottky device, but its fast recovery characteristics support efficient synchronous operation in buck or OR-ing configurations.
Can AONR21305C be driven directly from a 3.3 V microcontroller GPIO?
No - the AONR21305C has a gate threshold voltage range of −1.3 to −2.3 V, but its RDS(ON) rises sharply below −4.5 V. At −3.3 V, RDS(ON) exceeds 25 mΩ (per Figure 5), causing excessive conduction loss. A dedicated gate driver or level-shifter is required to deliver −4.5 V or lower to fully enhance the device.
Is the exposed thermal pad of AONR21305C electrically connected to any internal terminal?
Yes, the exposed pad (EP) of the AONR21305C is internally connected to the Source (S) terminal. It must be soldered to a PCB ground plane or source net to achieve the specified RθJC = 3 °C/W and full power rating. Leaving it floating or connecting it to drain violates safe operating area limits and risks thermal runaway.
What does "100% UIS Tested" mean for AONR21305C?
"100% UIS Tested" means every AONR21305C unit undergoes unclamped inductive switching stress test per JEDEC JESD24-11, verifying minimum 97 mJ single-pulse avalanche energy (EAS). This guarantees robustness against inductive turn-off transients - such as those from relay coils or motor windings - without requiring external clamping components.
AONR21305C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
AONR21305C FAQ
1.How can I place an order for AONR21305C through Aetrix?
Please submit a Request for Quotation (RFQ) for AONR21305C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONR21305C reliable?
The price and inventory of AONR21305C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONR21305C is usually 5 days.
3.What payment methods are accepted for AONR21305C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONR21305C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONR21305C?
AONR21305C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONR21305C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONR21305C?
For technical support, including AONR21305C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONR21305C requirements.
6.How does Aetrix verify that AONR21305C is sourced from the original manufacturer or authorized distributors?
All AONR21305C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONR21305C meets industry standards.
7.What is the process for return or replacement of AONR21305C?
All AONR21305C units undergo pre-shipment inspection (PSI). If there is an issue with AONR21305C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONR21305C part is unused and in its original packaging.
Return procedure for AONR21305C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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