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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONR32314

Name: AONR32314
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONR32314
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONR32314

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: AONR32314.pdf

Description:: MOSFET N-CH 30V 17A/30A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AONR32314 from Alpha & Omega Semiconductor is a 30V N-channel MOSFET in DFN 3×3 EP package, rated for 30A continuous drain current at V_GS=10V, with R_DS(ON) < 8.7 mΩ (V_GS=10V) and < 12.3 mΩ (V_GS=4.5V), optimized for notebook AC-in load switching and battery protection circuits.

For engineers reviewing the AONR32314 datasheet, pinout, applications, or equivalent options, key selection criteria include its low R_DS(ON) at 4.5V gate drive, 100% UIS-tested ruggedness, DFN thermal performance (R_θJC = 5.2°C/W), and RoHS/Halogen-Free compliance for space-constrained power management designs.

Technical Context

The AONR32314 employs advanced trench MOSFET technology to achieve high current density and low conduction loss. Its gate threshold voltage (1.25–2.25V) enables reliable turn-on with standard logic-level drivers, while its 100% avalanche-rated design supports unclamped inductive switching up to E_AS = 27 mJ (L = 0.05 mH).

Thermal performance is defined by junction-to-case resistance of 5.2°C/W and junction-to-ambient of 60°C/W on FR-4 (2 oz Cu). The device features low gate charge (Q_g(10V) = 22–32 nC) and fast switching (t_f = 3 ns, t_r = 2.5 ns), supporting high-frequency synchronous rectification and load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 5–12 V input rail protection
I_D (V_GS=10V)	30 A - Continuous current capability at full gate drive, suitable for >25 W load switches
R_DS(ON) (V_GS=10V)	< 8.7 mΩ - Enables ≤0.26 W conduction loss at 30 A, reducing thermal stress in compact layouts
R_DS(ON) (V_GS=4.5V)	< 12.3 mΩ - Ensures robust operation with 3.3 V/5 V microcontroller GPIO drive
Q_g(10V)	22–32 nC - Low gate charge minimizes driver power and enables efficient 500 kHz+ PWM control
E_AS	27 mJ - 100% tested unclamped inductive energy rating ensures reliability in battery disconnect transients
R_θJC	5.2 °C/W - Enables direct heatsink mounting for >9 W steady-state power dissipation at T_C = 100°C

Pinout & Package

Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad for PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection across six pins; low-inductance parallel routing for high-current return path
5, 6	Drain (D)	Two drain terminals tied internally; intended for high-current output connection with thermal pad coupling
G (Pin 5 side marker)	Gate (G)	Single gate input; located adjacent to drain for minimized gate loop inductance in high-dI/dt switching

Key Features

Feature	Design Value
Advanced trench process	Enables <8.7 mΩ R_DS(ON) in 3×3 mm DFN, improving power density over legacy SO-8 equivalents
100% UIS tested	Guarantees single-pulse avalanche energy handling up to 27 mJ without degradation-critical for battery disconnect safety
100% R_g tested	Ensures gate resistance between 1–3 Ω, stabilizing switching speed and reducing EMI variation across production lots
RoHS & Halogen-Free	Complies with IPC-1752A material declarations and JEDEC MSL-1 moisture sensitivity for reflow compatibility
Low Q_gd/Q_g ratio	Q_gd = 4 nC / Q_g(10V) ≈ 13% - improves Miller immunity and hard-switching robustness in synchronous buck stages

Applications

Notebook AC-in Load Switch	Battery Protection Circuit
Use Scenario: Hot-swap insertion of AC adapter into ultrabook mainboard, requiring controlled inrush and reverse-current blocking. IC Role / Device Role / Timing Role: High-side load switch controlling 19 V input rail; driven by system PMIC with 4.5 V gate signal. Use Value: R_DS(ON) < 12.3 mΩ at 4.5 V ensures <700 mW loss during sustained 30 A load, enabling fanless thermal design.	Use Scenario: Bidirectional current control in Li-ion battery pack for charge/discharge path isolation and short-circuit cutoff. IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for true bidirectional blocking; body diode used for discharge path. Use Value: 100% UIS-tested 27 mJ rating withstands inductive kick during 100 A fault interruption without failure.
USB-C Power Delivery Sink	Industrial 24 V DC Load Switch
Use Scenario: Input power path management in portable USB-C PD sink devices accepting up to 20 V/5 A input. IC Role / Device Role / Timing Role: Primary input FET in PD controller reference design; switched via I²C-controlled gate driver. Use Value: Low Q_g(4.5V) = 10–15 nC allows fast turn-on (<100 ns) for dynamic load-step response under PD contract negotiation.	Use Scenario: Remote-controlled 24 V industrial load switching in PLC I/O modules with surge and ESD immunity requirements. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay; driven by 3.3 V microcontroller GPIO. Use Value: R_θJC = 5.2°C/W enables 7.5 W continuous dissipation at T_C = 85°C without external heatsink-reducing BOM count.

Notebook AC-in Load Switch

Battery Protection Circuit

Use Scenario: Hot-swap insertion of AC adapter into ultrabook mainboard, requiring controlled inrush and reverse-current blocking.

IC Role / Device Role / Timing Role: High-side load switch controlling 19 V input rail; driven by system PMIC with 4.5 V gate signal.

Use Value: R_DS(ON) < 12.3 mΩ at 4.5 V ensures <700 mW loss during sustained 30 A load, enabling fanless thermal design.

Use Scenario: Bidirectional current control in Li-ion battery pack for charge/discharge path isolation and short-circuit cutoff.

IC Role / Device Role / Timing Role: Back-to-back N-channel configuration for true bidirectional blocking; body diode used for discharge path.

Use Value: 100% UIS-tested 27 mJ rating withstands inductive kick during 100 A fault interruption without failure.

USB-C Power Delivery Sink

Industrial 24 V DC Load Switch

Use Scenario: Input power path management in portable USB-C PD sink devices accepting up to 20 V/5 A input.

IC Role / Device Role / Timing Role: Primary input FET in PD controller reference design; switched via I²C-controlled gate driver.

Use Value: Low Q_g(4.5V) = 10–15 nC allows fast turn-on (<100 ns) for dynamic load-step response under PD contract negotiation.

Use Scenario: Remote-controlled 24 V industrial load switching in PLC I/O modules with surge and ESD immunity requirements.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay; driven by 3.3 V microcontroller GPIO.

Use Value: R_θJC = 5.2°C/W enables 7.5 W continuous dissipation at T_C = 85°C without external heatsink-reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3028LSD-13 (Diodes Inc.)	R_DS(ON) = 9.5 mΩ @ 10 V; DFN 3.3×3.3 mm; higher Q_g = 36 nC	Higher gate drive energy required; less suitable for 500 kHz+ switching	Prefer when lower cost is prioritized over switching efficiency in <200 kHz load switches
SIS822DN-T1-GE3 (Vishay)	R_DS(ON) = 7.8 mΩ @ 10 V; same DFN 3×3 EP; no 100% UIS test data published	Lacks documented avalanche ruggedness-requires additional external clamping for inductive loads	Prefer when conduction loss dominates design and transient energy is externally managed

Compared with DMN3028LSD-13 and SIS822DN-T1-GE3, the AONR32314 offers superior UIS ruggedness and lower Q_g, making it optimal for high-reliability battery protection and fast-switching AC-in load control where transient immunity and driver efficiency are critical.

Availability

AONR32314 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and USB-C PD sink power path management requiring stable component supply and long-term lifecycle support.

Supply support for AONR32314 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONR32314 belongs to AOS's low-voltage trench MOSFET product line, engineered specifically for high-current, low-R_DS(ON) load switching in space-constrained portable and battery-powered systems.

FAQ

What is the maximum continuous drain current rating for AONR32314 at 100°C case temperature?

The AONR32314 supports 24 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 3×3 EP package and ensures safe operation without exceeding T_J(MAX) = 150°C. Designers must verify PCB copper area and airflow to sustain this current in actual layout.

Does AONR32314 have a specified gate threshold voltage range, and how does it affect logic-level drive compatibility?

Yes, the AONR32314 has a gate threshold voltage (V_GS(th)) range of 1.25–2.25 V at I_D = 250 µA. This ensures reliable turn-on with 3.3 V and 5 V logic outputs, and its low V_GS(th) upper limit prevents unintended conduction during noise transients-critical for battery protection FETs.

Is AONR32314 suitable for use in back-to-back configuration for battery protection, and what body diode characteristics support this?

Yes, the AONR32314 is commonly used in back-to-back N-channel configurations for Li-ion battery charge/discharge control. Its body diode forward voltage is 0.7–1.0 V at I_S = 1 A, and reverse recovery charge Q_rr is 9.0 nC, enabling efficient discharge path conduction while limiting reverse-recovery losses during switching transitions.

What thermal metrics define the AONR32314's cooling requirements, and how do they differ between junction-to-case and junction-to-ambient?

The AONR32314 specifies R_θJC = 5.2°C/W (junction-to-case) and R_θJA = 60°C/W (junction-to-ambient on 1 in² FR-4, 2 oz Cu). R_θJC governs heatsink interface design, while R_θJA applies to board-level natural convection. For >5 W dissipation, thermal vias under the EP pad and copper pour are essential to approach R_θJC-limited performance.

How is the 100% UIS testing performed on AONR32314, and what energy level is guaranteed?

The AONR32314 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A110, using L = 0.05 mH and I_AS = 33 A to guarantee E_AS ≥ 27 mJ. This qualification ensures each unit can safely absorb inductive energy during fault events like hot-plug disconnection or battery short-circuit interruption without parametric shift or failure.

AONR32314 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1420 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.1W (Ta), 24W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (3x3)

AONR32314 FAQ

1.How can I place an order for AONR32314 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONR32314 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONR32314 reliable?

The price and inventory of AONR32314 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONR32314 is usually 5 days.

3.What payment methods are accepted for AONR32314?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONR32314 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONR32314?

AONR32314 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONR32314 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONR32314?

For technical support, including AONR32314 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONR32314 requirements.

6.How does Aetrix verify that AONR32314 is sourced from the original manufacturer or authorized distributors?

All AONR32314 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONR32314 meets industry standards.

7.What is the process for return or replacement of AONR32314?

All AONR32314 units undergo pre-shipment inspection (PSI). If there is an issue with AONR32314, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONR32314 part is unused and in its original packaging.

Return procedure for AONR32314:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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