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Alpha & Omega Semiconductor Inc. AONR34332C
- Part No.:
- AONR34332C
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
AONR34332C.pdf
- Description:
- MOSFET N-CH 30V 48A/50A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,512
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Product details
Overview
AONR34332C from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET optimized for high-current load switching in portable power systems, featuring RDS(ON) < 1.6 mΩ at VGS = 10 V, 100 A continuous drain current capability, and low gate charge (Qg = 78–110 nC), deployed in battery protection and USB-C PD power path control.
For engineers reviewing the AONR34332C datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.5V gate drive compatibility, 100% UIS-tested ruggedness, DFN3.3x3.3 EP thermal performance (RθJC = 2.2°C/W), and HBM Class 2 ESD rating-critical for compact, high-reliability DC-DC and battery-switching designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance with strong gate control down to 2.5 V, enabling direct interfacing with low-voltage microcontrollers and PMICs without level-shifting. Its body diode exhibits fast reverse recovery (trr = 21 ns, Qrr = 57 nC) and low forward voltage (VSD = 0.6–1.0 V), supporting synchronous rectification and bidirectional current handling in buck converters and OR-ing circuits.
The device is fully characterized for unclamped inductive switching (UIS) with 123 mJ avalanche energy (L = 0.05 mH) and undergoes 100% Rg screening, ensuring consistent gate drive timing (td(on) = 9 ns, tf = 18 ns) and robustness against transient overvoltage in automotive and industrial load-switch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12–24 V battery and adapter input stages. |
| ID (TC = 100°C) | 100 A - Continuous current rating at case temperature 100°C; enables high-power load switching without external heatsink in thermally optimized PCB layouts. |
| RDS(ON) (VGS = 10 V) | < 1.6 mΩ - Low conduction loss; yields ≤160 mW power dissipation at 10 A, critical for efficiency in portable battery systems. |
| Qg (10 V) | 78–110 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in high-frequency (>500 kHz) power stages. |
| RθJC | 2.2°C/W - Junction-to-case thermal resistance; supports >30 W steady-state power dissipation when mounted to copper plane or heatsink. |
| trr / Qrr | 21 ns / 57 nC - Body diode reverse recovery metrics; enables efficient operation in synchronous buck topologies with minimal shoot-through risk. |
| VGS(th) | 0.5–1.2 V (typ. 0.85 V) - Gate threshold voltage range; ensures reliable turn-on with 1.8 V and 3.3 V logic-level controllers. |
Pinout & Package
Package: DFN3.3×3.3 EP (exposed pad), surface-mount, RoHS and halogen-free compliant. Thermal pad must be soldered to PCB ground plane for optimal RθJC performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 2.5–12 V logic-compatible drive; low Rg (0.3–1.5 Ω) minimizes gate ringing. |
| 2, 3, 6, 7 (D) | Drain | High-current output node; paralleled pins reduce package inductance and resistive loss in high-di/dt switching. |
| 4, 5, 8 (S) | Source | Power return path; multiple pins lower source inductance and improve stability in fast-switching configurations. |
| EP (Exposed Pad) | Thermal & Electrical Ground | Primary heat transfer path to PCB; must be connected to large copper area for RθJC = 2.2°C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET architecture | Enables sub-2 mΩ RDS(ON) at 30 V while maintaining <1.2 V VGS(th), supporting direct low-voltage MCU drive. |
| 100% UIS tested | Guarantees 123 mJ single-pulse avalanche energy (L = 0.05 mH), eliminating need for external clamping in inductive load switching. |
| Low gate charge (Qg) | 78–110 nC total gate charge reduces driver power consumption and switching losses in high-frequency DC-DC converters. |
| HBM Class 2 ESD rating | ≥2 kV human-body-model robustness enables handling and assembly without special ESD controls in standard production environments. |
| DFN3.3×3.3 EP thermal design | 2.2°C/W RθJC allows >30 W continuous power dissipation with PCB copper thermal spreading-no discrete heatsink required. |
Applications
| USB-C Power Delivery Switching | Battery Protection Circuitry |
|---|---|
Use Scenario: Bidirectional 20 V/5 A power path management between USB-C port and Li-ion battery pack. IC Role / Device Role / Timing Role: Primary high-side load switch controlling power flow direction and fault isolation. Use Value: Ultra-low RDS(ON) (<1.6 mΩ) limits voltage drop to <100 mV at 60 A peak, preserving PD negotiation accuracy and minimizing thermal rise. |
Use Scenario: Overcurrent and short-circuit protection in 2-cell (8.4 V) smart battery packs for power tools and drones. IC Role / Device Role / Timing Role: Main discharge FET with integrated current-sense and fast shutdown response. Use Value: 100% UIS testing ensures survival during 100 A short-circuit events; low Qg enables <100 ns turn-off for precise fault containment. |
| Industrial 24 V DC Load Switching | Server VRM High-Current Sync Rectifier |
Use Scenario: Remote-controlled power enable/disable of 24 V solenoids, pumps, and actuators in PLC I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, driven by 3.3 V GPIO. Use Value: Logic-level gate drive (VGS(th) ≤ 1.2 V) eliminates level shifters; DFN thermal performance sustains 100 A surges without derating. |
Use Scenario: Synchronous rectification in 48 V → 12 V intermediate bus converters delivering up to 200 A per phase. IC Role / Device Role / Timing Role: Low-side synchronous FET with fast body diode recovery for zero-voltage switching (ZVS) operation. Use Value: trr = 21 ns and Qrr = 57 nC minimize dead-time losses and EMI; parallel drain/source pins reduce layout parasitics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N03LS | RDS(ON) = 1.0 mΩ @ 10 V (lower), but VDS = 30 V same; Qg = 85 nC; DSO-8 package (larger footprint, higher RθJA). | Preferred where board space permits larger package and lowest possible conduction loss dominates over thermal density. | Select BSC010N03LS only if PCB layout allows DSO-8 and junction temperature margin is sufficient without exposed-pad thermal optimization. |
| Vishay SiR626DP | RDS(ON) = 1.7 mΩ @ 10 V (slightly higher); Qg = 92 nC; PowerPAK® 3.3×3.3 same footprint; no 100% UIS test data published. | Suitable for cost-sensitive industrial loads where avalanche ruggedness is less critical than footprint compatibility. | Choose SiR626DP when matching AONR34332C's DFN3.3×3.3 layout is mandatory and full UIS validation is not required per system safety spec. |
Compared with BSC010N03LS and SiR626DP, the AONR34332C uniquely combines 100% UIS qualification, 2.5 V gate drive capability, and DFN3.3×3.3 EP thermal performance-making it optimal for space-constrained, high-reliability battery and USB-C power path designs where both efficiency and transient survivability are non-negotiable.
Availability
AONR34332C is available at Aetrix Electronics and suitable for USB-C power delivery modules, battery protection IC subsystems, and industrial 24 V load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AONR34332C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AONR34332C belongs to AOS's "NextGen Trench" N-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching in portable and power-dense systems where thermal performance and gate-drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for AONR34332C at 100°C case temperature?
The AONR34332C supports 100 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper thermal management via the exposed pad soldered to a ≥1 in² 2 oz. copper area. At higher ambient temperatures or reduced copper area, derating per Figure 13 applies.
Does AONR34332C support logic-level gate drive from a 3.3 V microcontroller?
Yes, the AONR34332C has a gate threshold voltage VGS(th) of 0.5–1.2 V (typ. 0.85 V), and its RDS(ON) remains < 2.9 mΩ even at VGS = 2.5 V. This ensures full enhancement and low conduction loss when driven directly by standard 3.3 V GPIO outputs without level-shifting circuitry.
Is AONR34332C qualified for unclamped inductive switching (UIS)?
Yes, every unit of AONR34332C undergoes 100% UIS testing per JEDEC JESD22-A115, achieving 123 mJ avalanche energy with L = 0.05 mH. This qualification ensures robust operation in motor drive, solenoid, and relay-switching applications where inductive kickback is unavoidable.
What is the thermal resistance from junction to case (RθJC) for AONR34332C, and how should the exposed pad be implemented?
The AONR34332C has RθJC = 2.2°C/W, measured with the exposed pad fully soldered to a large internal or bottom-side copper plane. For optimal thermal performance, use ≥9 solder paste apertures under the pad, connect to ≥1 in² of 2 oz. copper, and avoid thermal relief patterns that impede heat transfer.
Can AONR34332C be used as a synchronous rectifier in a buck converter?
Yes, the AONR34332C is suitable for low-side synchronous rectification due to its fast body diode characteristics: trr = 21 ns and Qrr = 57 nC at IF = 20 A. Its low RDS(ON) and low Qg further reduce conduction and switching losses, improving efficiency in high-current, high-frequency buck regulators.
AONR34332C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaMOS
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 48A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4175 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 83.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN-EP (3.3x3.3)
AONR34332C FAQ
1.How can I place an order for AONR34332C through Aetrix?
Please submit a Request for Quotation (RFQ) for AONR34332C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONR34332C reliable?
The price and inventory of AONR34332C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONR34332C is usually 5 days.
3.What payment methods are accepted for AONR34332C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONR34332C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONR34332C?
AONR34332C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONR34332C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONR34332C?
For technical support, including AONR34332C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONR34332C requirements.
6.How does Aetrix verify that AONR34332C is sourced from the original manufacturer or authorized distributors?
All AONR34332C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONR34332C meets industry standards.
7.What is the process for return or replacement of AONR34332C?
All AONR34332C units undergo pre-shipment inspection (PSI). If there is an issue with AONR34332C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONR34332C part is unused and in its original packaging.
Return procedure for AONR34332C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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