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Alpha & Omega Semiconductor Inc. AONR36328
- Part No.:
- AONR36328
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
AONR36328.pdf
- Description:
- N
- Quantity:
- Payment:
- Shipping:
Inventory:9,636
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Product details
Overview
AONR36328 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET in DFN 3×3 EP package, rated for 20A continuous drain current at VGS=10V, with RDS(ON) < 8.4 mΩ (VGS=10V) and < 11.5 mΩ (VGS=4.5V), optimized for high-efficiency DC/DC converters in computing, servers, and POL applications.
For engineers reviewing the AONR36328 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg(10V) = 11–20 nC), robust avalanche rating (EAS = 15 mJ), HBM Class 2 ESD protection, 100% UIS and Rg tested qualification, and thermal performance (RθJC = 5.2°C/W).
Technical Context
The AONR36328 employs Trench Power MOSFET technology to achieve low RDS(ON) at both 10V and 4.5V gate drive, enabling compatibility with standard and logic-level controllers. Its gate threshold voltage (1.3–2.1 V) ensures reliable turn-on with minimal drive overhead.
Dynamic parameters-including Qgd = 1.8 nC, Ciss = 700 pF, and tr/tf = 2.5 ns-support high-frequency switching in synchronous buck and isolated forward topologies. The device features an integrated body diode with VSD = 0.7–1.0 V and Qrr = 12.7 nC, validated under 500 A/μs di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24V input rails and transient margin in industrial/computing power stages. |
| ID (VGS=10V) | 20 A - Continuous current capability at full gate drive, suitable for 30–50W POL modules without forced cooling. |
| RDS(ON) (VGS=4.5V) | < 11.5 mΩ - Enables efficient operation with 5V or 3.3V gate drivers in compact, low-voltage DC/DC designs. |
| Qg(10V) | 11–20 nC - Low total gate charge reduces driver loss and enables >1 MHz switching in high-density converters. |
| EAS | 15 mJ - Rated unclamped inductive switching energy supports robustness against load dump and fault transients. |
| RθJC | 5.2 °C/W - Junction-to-case thermal resistance allows direct heatsinking via exposed pad for thermal management in space-constrained layouts. |
| HBM ESD | Class 2 (≥2 kV) - Validated electrostatic discharge immunity for handling and assembly in automated SMT lines. |
Pinout & Package
Package: DFN 3×3 mm with exposed thermal pad (EP); bottom-side thermal interface required for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; low Rg (0.7–2.3 Ω) minimizes gate loop oscillation and improves switching stability. |
| 2, 3, 4, 5, 6, 7, 8 (D) | Drain | High-current output node; multiple parallel pins reduce current density and parasitic inductance in high-di/dt paths. |
| S (all remaining pads) | Source | Power return path; tied to internal source metallization and exposed pad for low-inductance source routing and thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET architecture | Delivers sub-12 mΩ RDS(ON) at 4.5V drive, enabling high efficiency in 5V-gate synchronous rectifiers and POL regulators. |
| 100% UIS tested | Guarantees minimum 15 mJ avalanche energy per device, eliminating need for external snubbers in inductive load switching. |
| Low Qgd/Qg ratio (≈16%) | Reduces Miller-induced shoot-through risk and improves controllability during hard-switching transitions. |
| RoHS and Halogen-Free compliant | Meets IPC-1752A material declaration requirements for industrial and telecom equipment targeting EU and global markets. |
| DFN 3×3 EP thermal design | Exposed pad enables ≤5.2°C/W RθJC, supporting >24 W continuous power dissipation with minimal PCB copper area. |
Applications
| Server Point-of-Load Regulators | Telecom Isolated DC/DC Converters |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying core voltage to CPUs/FPGAs in 1U server blades. IC Role / Device Role: Synchronous high-side switch operating at 500 kHz–1 MHz with 3.3V/5V gate drive. Use Value: Sub-12 mΩ RDS(ON) at 4.5V reduces conduction loss by ≥18% vs. legacy 30V MOSFETs, improving full-load efficiency to >92%. |
Use Scenario: Primary-side active clamp forward converter in 48V telecom rectifier modules. IC Role / Device Role: Main switching FET handling 20A peak primary current with 30V blocking requirement. Use Value: 15 mJ EAS rating eliminates need for external clamping circuits, reducing BOM count and layout complexity. |
| Industrial Motor Drive Half-Bridges | Automotive Body Control Modules |
|
Use Scenario: Low-voltage (24V) half-bridge driving brushed DC motors in factory automation actuators. IC Role / Device Role: High-side switch with fast turn-off (tf = 2.5 ns) to minimize shoot-through window. Use Value: Low Qgd (1.8 nC) and tight VGS(th) distribution (1.3–2.1 V) ensure predictable timing margins across temperature and process variation. |
Use Scenario: Load switch for LED lighting and solenoid control in 12V automotive BCMs with strict EMC limits. IC Role / Device Role: Protected high-side switch with integrated ESD (HBM Class 2) and avalanche ruggedness. Use Value: 100% Rg tested gate resistance ensures consistent switching behavior across production lots, critical for EMC compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | RDS(ON) = 1.4 mΩ @ 10V (lower), but larger PG-TSDSON-8 (5×6 mm) package and higher Qg (33 nC). | Better conduction loss at high VGS, but less suitable for space-constrained 3×3 mm footprints and high-frequency designs. | Select when board area permits larger package and gate drive strength supports higher Qg. |
| Vishay SiR626DP | RDS(ON) = 9.2 mΩ @ 4.5V (slightly higher), same DFN 3×3 EP package, Qg = 14.5 nC, no 100% UIS test data published. | Drop-in footprint replacement but lacks guaranteed avalanche ruggedness; requires additional system-level stress validation. | Acceptable where cost sensitivity outweighs need for certified UIS robustness and tighter RDS(ON) spec. |
Compared with BSC014N04LS6 and SiR626DP, the AONR36328 provides optimal balance of 3×3 mm footprint, 4.5V drivability, certified UIS performance, and gate charge efficiency-making it preferred for thermally dense, high-reliability POL and telecom power stages.
Availability
AONR36328 is available at Aetrix Electronics and suitable for server point-of-load regulators, telecom isolated DC/DC converters, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AONR36328 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AONR36328 belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC/DC conversion where low RDS(ON), fast switching, and ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for AONR36328 at 100°C case temperature?
The AONR36328 supports 24 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects its RθJC = 5.2°C/W and TJ(MAX) = 150°C limit. At lower case temperatures, the device sustains up to 30 A (TC = 25°C). Designers must verify PCB copper area and airflow to maintain safe junction temperature under full load.
Does AONR36328 have built-in ESD protection, and what level is certified?
Yes, the AONR36328 includes on-die ESD protection rated to HBM Class 2 (≥2 kV), verified per JEDEC JS-001. This level meets typical handling requirements for automated SMT assembly and board-level integration without additional external protection in most environments.
Can AONR36328 be used as a synchronous rectifier in a 5V-input buck converter?
Yes, the AONR36328 is well-suited as a synchronous rectifier in 5V-input buck converters due to its RDS(ON) < 11.5 mΩ at VGS = 4.5V and low Qgd (1.8 nC), which minimize conduction loss and improve light-load efficiency. Its fast tr/tf (2.5 ns) also supports high-frequency operation up to 1 MHz.
What is the gate threshold voltage range for AONR36328, and how does it affect drive circuit design?
The AONR36328 has a gate threshold voltage (VGS(th)) range of 1.3–2.1 V at TJ = 25°C. This tight distribution ensures reliable turn-on with logic-level drivers (e.g., 3.3V or 5V microcontrollers) while minimizing risk of partial enhancement. Designers should maintain ≥4.5V gate drive to achieve rated RDS(ON) and avoid increased conduction loss.
Is AONR36328 qualified for automotive applications per AEC-Q101?
No, the AONR36328 is not AEC-Q101 qualified. It is designed and tested for industrial, computing, and telecom applications. For automotive use, AOS offers AEC-Q101 qualified variants such as the AONR21313; designers requiring automotive-grade reliability must select from that qualified family instead of relying on AONR36328.
AONR36328 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 24W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN-EP (3x3)
AONR36328 FAQ
1.How can I place an order for AONR36328 through Aetrix?
Please submit a Request for Quotation (RFQ) for AONR36328 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONR36328 reliable?
The price and inventory of AONR36328 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONR36328 is usually 5 days.
3.What payment methods are accepted for AONR36328?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONR36328 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONR36328?
AONR36328 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONR36328 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONR36328?
For technical support, including AONR36328 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONR36328 requirements.
6.How does Aetrix verify that AONR36328 is sourced from the original manufacturer or authorized distributors?
All AONR36328 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONR36328 meets industry standards.
7.What is the process for return or replacement of AONR36328?
All AONR36328 units undergo pre-shipment inspection (PSI). If there is an issue with AONR36328, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONR36328 part is unused and in its original packaging.
Return procedure for AONR36328:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AONR36328 Tags
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