Alpha & Omega Semiconductor Inc. AONS21307

Overview

AONS21307 from Alpha & Omega Semiconductor is a -30V, -24A P-channel MOSFET in DFN 5x6 package with R_DS(ON) < 11 mΩ at V_GS = -10 V and < 18.5 mΩ at V_GS = -4.5 V, designed for notebook AC-in load switching and battery protection circuits where low conduction loss and high avalanche robustness are required.

For engineers reviewing the AONS21307 datasheet, pinout, applications, or equivalent options, key selection criteria include its -30V V_DS, -24A continuous drain rating at T_C = 25°C, 100% UIS-tested ruggedness, gate threshold of -1.3 to -2.3 V, and thermal resistance R_θJC = 3.3°C/W for high-power-density board-level thermal management.

Technical Context

The AONS21307 employs advanced trench gate technology to achieve low R_DS(ON) and high current capability in a surface-mount DFN 5x6 package. Its gate threshold voltage range (-1.3 to -2.3 V) ensures reliable turn-on with standard logic-level drive, while 100% R_g testing guarantees consistent switching performance.

With 54 mJ unclamped inductive switching (UIS) energy rating at L = 0.1 mH and body diode reverse recovery time t_rr = 13.3 ns, the AONS21307 supports fast, robust operation in synchronous rectification and bidirectional power control applications without external snubbing.

Key Specifications

Pinout & Package

Package: DFN 5x6 (dual-side thermal pad), 8-pin, exposed drain pad on bottom side for enhanced thermal transfer and electrical connection to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with Si2301DDS and DMG2305UVT, the AONS21307 delivers 4× lower R_DS(ON) at -4.5 V and verified 54 mJ UIS capability-making it uniquely suited for high-current, high-reliability load switching where thermal density and fault robustness are design-critical.

Availability

AONS21307 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection circuits, and USB-C power delivery sink designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for AONS21307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS21307 belongs to AOS's advanced trench P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching applications demanding low R_DS(ON), tight gate threshold distribution, and field-proven avalanche reliability.

FAQ

What is the maximum continuous drain current rating for the AONS21307?

The AONS21307 has a maximum continuous drain current I_D of -24 A at T_C = 25°C. At elevated case temperatures, this rating de-rates linearly to -14 A at T_C = 100°C per the datasheet current de-rating curve. This specification reflects package-limited current handling, not silicon-limited capability, and assumes proper PCB copper area for thermal conduction. The AONS21307 must be mounted with its exposed drain pad soldered to ≥1 in² of 2 oz. copper for rated performance.

Does the AONS21307 support logic-level gate drive?

Yes, the AONS21307 supports logic-level gate drive with a gate threshold voltage V_GS(th) ranging from -1.3 V to -2.3 V, ensuring full enhancement at -4.5 V. Its R_DS(ON) remains < 18.5 mΩ under -4.5 V gate bias, making it compatible with 3.3 V and 5 V microcontroller GPIOs without level shifters. The AONS21307 also features 100% R_g testing to guarantee gate resistance between 4.5 Ω and 9 Ω, enabling predictable switching behavior across production lots.

Is the AONS21307 rated for avalanche energy, and what is the value?

Yes, the AONS21307 is 100% unclamped inductive switching (UIS) tested with a guaranteed single-pulse avalanche energy rating E_AS of 54 mJ at L = 0.1 mH and T_J = 25°C. This rating is measured per JEDEC JESD24-11 and applies to each unit shipped. The AONS21307's robust avalanche capability eliminates the need for external clamping components in battery protection and load-switching applications where inductive transients may occur during fault conditions.

What is the thermal resistance from junction to case (R_θJC) for the AONS21307?

The AONS21307 has a maximum junction-to-case thermal resistance R_θJC of 3.3°C/W, measured from the silicon die to the exposed drain pad. This low value enables efficient heat transfer to the PCB when the drain pad is soldered to a thermally optimized copper area. For example, with a 15 W power dissipation and 3.3°C/W R_θJC, the junction-to-case temperature rise is only ~50°C-allowing the AONS21307 to operate reliably at T_C = 100°C while maintaining T_J ≤ 150°C.

What package type does the AONS21307 use, and how is the drain terminal connected?

The AONS21307 uses a DFN 5x6 package with an exposed drain pad on the bottom side. Pins 1–3 and the entire bottom thermal pad are electrically and thermally connected to the drain terminal. This configuration requires soldering the pad to a large PCB copper pour to achieve both rated current capacity (-24 A) and thermal performance (R_θJC = 3.3°C/W). The AONS21307's pinout places gate (G), source (S), and drain (D) on three distinct sides to simplify routing in high-density layouts.