My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AONS32100
- Part No.:
- AONS32100
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AONS32100.pdf
- Description:
- MOSFET N-CH 25V 73A/400A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,038
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AONS32100 from Alpha & Omega Semiconductor is a 25V N-channel Trench Power MOSFET optimized for high-current ORing and eFuse applications, featuring RDS(ON) < 0.73 mΩ at VGS = 10 V, 400 A continuous drain current, and DFN 5×6 package with exposed thermal pad. It supports ultra-high-current battery charge/discharge circuits in server power supplies and industrial UPS systems.
For engineers reviewing the AONS32100 datasheet, pinout, applications, or equivalent options, key selection criteria include its 0.73 mΩ on-resistance at 10 V gate drive, 100% UIS-tested ruggedness, 240 nC total gate charge, and thermal performance validated up to TC = 100°C with RθJC = 0.26°C/W.
Technical Context
The AONS32100 uses trench-gate silicon technology to achieve low RDS(ON) and high current density in a surface-mount DFN package. Its gate threshold voltage (0.6–1.6 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 1400 pF reverse transfer capacitance (Crss) supports stable switching in high-frequency synchronous rectification.
Thermal design is enabled by direct die-to-case conduction via the exposed copper pad, delivering RθJC = 0.26°C/W and supporting 160 W power dissipation at TC = 100°C. The device is 100% tested for unclamped inductive switching (UIS) energy (320 mJ) and gate resistance (Rg = 0.7–2.1 Ω), ensuring robustness in fault-tolerant power paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12 V and 24 V bus systems |
| ID (VGS = 10 V) | 400 A - Continuous current capability enabling single-device replacement of parallel MOSFETs |
| RDS(ON) (VGS = 10 V) | < 0.73 mΩ - Minimizes conduction loss below 120 W at 400 A, critical for high-efficiency ORing |
| Qg (10 V) | 240 nC - Gate drive energy requirement determines driver sizing and switching loss trade-off |
| RθJC | 0.26°C/W - Enables direct heatsink mounting for high-power thermal management |
| EAS | 320 mJ - Confirmed avalanche energy rating ensures reliability during load dump or short-circuit events |
| VGS(th) | 0.6–1.6 V - Ensures turn-on with standard logic-level gate drivers without level-shifting |
Pinout & Package
Package: DFN 5×6 mm with exposed thermal pad (pin-compatible with industry-standard 5×6 DFN footprint). Thermal pad must be soldered to PCB ground plane for rated RθJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Seven paralleled drain terminals reduce package inductance and distribute high-current stress |
| 5 | Gate (G) | Single gate input with 0.7–2.1 Ω internal gate resistance; requires external series resistor for optimal dV/dt control |
| S (pins not numbered but located on bottom side) | Source (S) | Three source terminals (visible on bottom view) provide low-inductance return path for high di/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees 320 mJ avalanche energy handling without degradation-critical for eFuse fault clearing |
| Low RDS(ON) at 4.5 V | < 1.08 mΩ enables use with 3.3 V microcontrollers in battery protection ICs |
| High current density | 400 A rating in 5×6 mm DFN eliminates need for MOSFET paralleling in 2 kW+ systems |
| RoHS & Halogen-Free | Complies with IPC-1752A material declaration requirements for industrial and telecom equipment |
| Body diode Qrr | 70 nC reverse recovery charge supports efficient synchronous rectification in DC/DC converters |
Applications
| Server ORing FET | Industrial UPS Battery Switch |
|---|---|
Use Scenario: Parallel redundant 12 V power supplies in rack servers require zero-voltage-drop ORing to prevent backfeed and ensure hot-swap capability. IC Role / Device Role / Timing Role: AONS32100 acts as a bidirectional, low-loss power path switch controlled by an external ORing controller (e.g., LTC4357). Use Value: 0.73 mΩ RDS(ON) limits conduction loss to <1.2 W at 400 A, reducing thermal load and enabling compact heatsinkless layout. | Use Scenario: High-current battery disconnect in 48 V industrial UPS systems during overcurrent or thermal fault conditions. IC Role / Device Role / Timing Role: AONS32100 serves as the main eFuse switch, driven by a dedicated protection ASIC (e.g., MAX17522) for sub-100 μs fault response. Use Value: 100% UIS testing and 320 mJ EAS allow safe interruption of >500 A fault currents without device failure. |
| EV Onboard Charger Input Stage | High-Power PoE++ PSE Switch |
Use Scenario: Bidirectional AC/DC front-end switching in 11 kW onboard chargers where battery-side MOSFETs handle regenerative braking energy. IC Role / Device Role / Timing Role: AONS32100 operates as the high-side battery isolation FET, synchronized with SiC diodes for zero-voltage turn-on. Use Value: 240 nC Qg and 1400 pF Crss enable clean 100 kHz switching with minimal Miller-induced shoot-through risk. | Use Scenario: 90 W PoE++ (IEEE 802.3bt Type 4) power sourcing equipment requiring four-quadrant current limiting and fast fault shutdown. IC Role / Device Role / Timing Role: AONS32100 functions as the primary current-controlled pass element in a digitally managed PSE controller loop. Use Value: 400 A ID rating supports 1.5× peak current headroom for IEEE 802.3bt surge testing (1.25× ILIM for 75 ms). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | RDS(ON) = 0.85 mΩ @ 10 V; Qg = 190 nC; DFN 5×6 but no 100% UIS test data published | Lacks documented UIS rating; suitable only where fault energy is externally clamped | Prefer AONS32100 when unclamped inductive transients exceed 150 mJ |
| SISS78LDN-T1-GE3 | RDS(ON) = 0.65 mΩ @ 10 V; higher 420 A ID; Qg = 265 nC; same DFN 5×6 footprint | Higher gate charge increases driver loss; requires stronger gate driver (≥2 A peak) | Choose SISS78LDN if lowest RDS(ON) is priority and gate drive capability allows |
Compared with IRFH7107TRPBF and SISS78LDN-T1-GE3, the AONS32100 delivers the best balance of ultra-low on-resistance, proven avalanche ruggedness, and moderate gate charge-making it optimal for eFuse and ORing designs where reliability under fault conditions is non-negotiable.
Availability
AONS32100 is available at Aetrix Electronics and suitable for server ORing, industrial UPS battery switching, and EV onboard charger applications requiring stable component supply and long-term production support.
Supply support for AONS32100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AONS32100 belongs to AOS's Trench Power MOSFET family, engineered specifically for high-current, low-voltage power path management in mission-critical infrastructure where efficiency, ruggedness, and thermal performance are paramount.
FAQ
What is the maximum continuous drain current rating for the AONS32100?
The AONS32100 is rated for 400 A continuous drain current at VGS = 10 V and TC = 100°C. This rating assumes proper PCB thermal design with the exposed drain pad fully soldered to a large copper area. At TC = 25°C, the absolute maximum is limited by package construction to 400 A, not junction temperature.
Does the AONS32100 support logic-level gate drive?
Yes-the AONS32100 has a gate threshold voltage range of 0.6–1.6 V and achieves RDS(ON) < 1.08 mΩ at VGS = 4.5 V, making it compatible with 3.3 V and 5 V logic-level controllers. Full enhancement to 400 A requires ≥10 V gate drive for minimum RDS(ON).
Is the AONS32100 qualified for automotive applications?
No-the AONS32100 is not AEC-Q101 qualified and is intended for industrial, computing, and telecom applications. Its -55°C to +150°C operating temperature range meets industrial requirements but lacks automotive-specific stress testing, PPAP documentation, or zero-defect screening.
How is thermal performance measured for the AONS32100?
Thermal performance is specified as RθJC = 0.26°C/W (junction-to-case), measured with the device mounted to a large heatsink. RθJA = 15°C/W is measured on a 1 in² FR-4 board with 2 oz copper. For production designs, AONS32100 thermal modeling must use the normalized transient impedance curve (Figure 10) and actual PCB copper mass.
What does "100% UIS Tested" mean for the AONS32100?
"100% UIS Tested" means every AONS32100 unit undergoes unclamped inductive switching validation at 320 mJ (L = 0.1 mH), confirming ability to absorb inductive energy without parametric shift or failure. This differs from sampling-based qualification and provides lot-level assurance for eFuse and ORing reliability.
AONS32100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Ta), 400A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.73mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15200 pF @ 12.5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AONS32100 FAQ
1.How can I place an order for AONS32100 through Aetrix?
Please submit a Request for Quotation (RFQ) for AONS32100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONS32100 reliable?
The price and inventory of AONS32100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS32100 is usually 5 days.
3.What payment methods are accepted for AONS32100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS32100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONS32100?
AONS32100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONS32100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONS32100?
For technical support, including AONS32100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS32100 requirements.
6.How does Aetrix verify that AONS32100 is sourced from the original manufacturer or authorized distributors?
All AONS32100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS32100 meets industry standards.
7.What is the process for return or replacement of AONS32100?
All AONS32100 units undergo pre-shipment inspection (PSI). If there is an issue with AONS32100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONS32100 part is unused and in its original packaging.
Return procedure for AONS32100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AONS32100 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
