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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS32106

Name: AONS32106
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS32106
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS32106

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS32106.pdf

Description:: N

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Product details

Overview

AONS32106 from Alpha & Omega Semiconductor is a 20V N-channel Trench Power MOSFET optimized for high-efficiency DC/DC conversion and battery protection switching, featuring R_DS(ON) < 5.3 mΩ at V_GS = 4.5V, 20A continuous drain current, and 100% UIS-tested ruggedness in a DFN 5×6 package.

For engineers reviewing the AONS32106 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g = 31–45 nC), fast switching (t_f = 21 ns), body-diode recovery performance (Q_rr = 30 nC), and thermal resistance (R_θJC = 3.4 °C/W) for high-density power stages.

Technical Context

The AONS32106 employs trench-gate silicon process technology to achieve low on-resistance and high current density in a thermally enhanced DFN 5×6 package with exposed drain pad. Its gate threshold voltage (0.45–1.25 V) enables compatibility with 2.5V and 4.5V logic-level drive, while its 100% avalanche-rated construction supports unclamped inductive switching in POL converters.

Dynamic parameters-including C_iss = 3300 pF, C_rss = 370 pF, and g_fs = 100 S-support stable operation under high dV/dt conditions. The device's SOA is defined up to 10 ms pulse width at T_C = 25°C, with R_DS(ON) limited conduction at elevated case temperatures per Figure 13.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12V-input DC/DC stages and battery-side switches
I_D (V_GS=4.5V)	20 A - Continuous current capability at logic-level gate drive, suitable for 25W–50W point-of-load rails
R_DS(ON) (V_GS=4.5V)	< 5.3 mΩ - Enables <100 mW conduction loss at 20A, critical for thermally constrained PCB layouts
Q_g (4.5V)	31–45 nC - Determines gate driver power requirement and switching loss trade-off in 300–1000 kHz converters
R_θJC	3.4 °C/W - Enables direct heatsinking via exposed drain pad; supports >14 W steady-state dissipation at T_C = 100°C
E_AS	80 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during load dump or short-circuit events
V_GS(th)	0.45–1.25 V - Ensures turn-on with standard 2.5V/3.3V microcontroller GPIO without level-shifting

Pinout & Package

Package: DFN 5×6 mm, 8-lead, exposed drain pad (top view: pins 1–4 = S/S/S/G; pins 5–8 = D/D/D/D). Thermal path optimized via bottom-side copper land.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 6, 7, 8	Drain (D)	High-current output node; electrically and thermally connected to exposed pad for low-inductance, low-R_DS(ON) operation
4	Gate (G)	Control input; requires low-impedance gate driver due to Q_g = 31–45 nC and R_g = 1.2–3.6 Ω
5	Source (S)	Reference node for gate drive; tied to power ground plane to minimize common-source inductance

Key Features

Feature	Design Value
Trench Power MOSFET architecture	Delivers R_DS(ON) < 5.3 mΩ at 4.5V drive while maintaining robust short-circuit withstand time
100% UIS tested	Guarantees 80 mJ avalanche energy handling without parameter shift-critical for non-clamped synchronous rectifier designs
100% R_g tested	Ensures gate resistance between 1.2–3.6 Ω, enabling predictable switching speed and EMI control across production lots
RoHS and Halogen-Free compliant	Meets IPC-J-STD-609 Class 1 halogen-free definition and EU RoHS Directive 2011/65/EU Annex II
Thermally enhanced DFN 5×6	3.4 °C/W junction-to-case resistance allows >14 W power dissipation with minimal heatsink area

Applications

Server VRM High-Side Switch	Battery Protection FET
Use Scenario: High-frequency (500–1000 kHz), high-current (20–40A) buck converter in server CPU voltage regulator modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with fast turn-on (t_D(on) = 7.5 ns) and low Q_gd/Q_g ratio for reduced shoot-through risk. Use Value: R_DS(ON) < 5.3 mΩ minimizes I²R losses at 20A, while 3.4 °C/W R_θJC enables compact thermal design without external heatsinks.	Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Low-voltage, logic-level controlled load switch placed between battery pack and system load. Use Value: V_GS(th) range (0.45–1.25 V) ensures reliable turn-on from 2.5V supervisor ICs; 100% UIS testing prevents failure during fault-induced inductive kickback.
Point-of-Load Converter	USB-C PD Power Path
Use Scenario: Compact 12V-to-3.3V/5V step-down converter on FPGA or ASIC carrier boards with strict board space constraints. IC Role / Device Role / Timing Role: Main power switch operating at 1 MHz with minimal gate drive loss due to Q_g = 31–45 nC. Use Value: DFN 5×6 footprint saves >40% area vs. SO-8; low C_iss/C_rss ratio improves EMI margin in dense mixed-signal environments.	Use Scenario: Input power path switch in USB-C PD 3.0 compliant portable chargers supporting 20V/5A input. IC Role / Device Role / Timing Role: Reverse-blocking, low-R_DS(ON) pass transistor controlling upstream power delivery to internal battery charger. Use Value: 20V V_DS rating safely handles USB-C PD's 20V max; body diode V_SD = 0.6–1.0 V enables efficient reverse-conduction during dead-time in bidirectional architectures.

Server VRM High-Side Switch

Battery Protection FET

Use Scenario: High-frequency (500–1000 kHz), high-current (20–40A) buck converter in server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with fast turn-on (t_D(on) = 7.5 ns) and low Q_gd/Q_g ratio for reduced shoot-through risk.

Use Value: R_DS(ON) < 5.3 mΩ minimizes I²R losses at 20A, while 3.4 °C/W R_θJC enables compact thermal design without external heatsinks.

Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Low-voltage, logic-level controlled load switch placed between battery pack and system load.

Use Value: V_GS(th) range (0.45–1.25 V) ensures reliable turn-on from 2.5V supervisor ICs; 100% UIS testing prevents failure during fault-induced inductive kickback.

Point-of-Load Converter

USB-C PD Power Path

Use Scenario: Compact 12V-to-3.3V/5V step-down converter on FPGA or ASIC carrier boards with strict board space constraints.

IC Role / Device Role / Timing Role: Main power switch operating at 1 MHz with minimal gate drive loss due to Q_g = 31–45 nC.

Use Value: DFN 5×6 footprint saves >40% area vs. SO-8; low C_iss/C_rss ratio improves EMI margin in dense mixed-signal environments.

Use Scenario: Input power path switch in USB-C PD 3.0 compliant portable chargers supporting 20V/5A input.

IC Role / Device Role / Timing Role: Reverse-blocking, low-R_DS(ON) pass transistor controlling upstream power delivery to internal battery charger.

Use Value: 20V V_DS rating safely handles USB-C PD's 20V max; body diode V_SD = 0.6–1.0 V enables efficient reverse-conduction during dead-time in bidirectional architectures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC020N06NS3	V_DS = 60V, R_DS(ON) = 2.0 mΩ @ 4.5V, larger PG-TSDSON-8 package (6.1×5.1 mm)	Higher voltage rating suits 48V systems but increases gate charge (Q_g = 52 nC) and cost	Select when 60V blocking is required and board space permits larger footprint
Vishay SiR872DP	V_DS = 30V, R_DS(ON) = 4.2 mΩ @ 4.5V, same DFN 5×6 package, higher Q_g = 54 nC	Higher switching loss in 500+ kHz designs; better suited for lower-frequency, higher-current applications	Prefer when 30V rating is mandatory and thermal budget allows higher gate drive power

Compared with BSC020N06NS3 and SiR872DP, the AONS32106 delivers optimal balance of 20V rating, ultra-low R_DS(ON), and compact DFN 5×6 size for space-constrained 12V-input POL converters-without over-specifying voltage or sacrificing switching efficiency.

Availability

AONS32106 is available at Aetrix Electronics and suitable for DC/DC converters in computing, battery protection switches, and USB-C PD power path management requiring stable component supply and full traceability.

Supply support for AONS32106 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AONS32106 belongs to AOS's Trench Power MOSFET product line, engineered for high-efficiency, high-density power conversion in logic-level-driven applications such as server VRMs and portable battery systems.

FAQ

What is the maximum continuous drain current for AONS32106 at 70°C ambient temperature?

The AONS32106 supports 20A continuous drain current at T_A = 70°C when mounted on a 1 in² FR-4 board with 2 oz. copper, per its absolute maximum ratings table. Derating begins above this temperature, with 14W power dissipation limit at T_C = 100°C. For sustained 20A operation, thermal design must maintain case temperature ≤70°C. The AONS32106 datasheet specifies these limits in Section 1 under Absolute Maximum Ratings.

Does AONS32106 support 2.5V logic-level gate drive?

Yes, the AONS32106 is fully specified for 2.5V gate drive: R_DS(ON) is guaranteed < 6.8 mΩ at V_GS = 2.5V and I_D = 18A, and V_GS(th) spans 0.45–1.25 V, ensuring robust turn-on with 2.5V microcontrollers or supervisors. This makes the AONS32106 suitable for battery-powered systems where 3.3V rail generation is avoided. Gate charge remains low (Q_g = 31–45 nC) even at 2.5V.

Is AONS32106 rated for avalanche energy, and what is the test condition?

Yes, the AONS32106 is 100% tested for unclamped inductive switching (UIS) with E_AS = 80 mJ at L = 0.1 mH, per the Product Summary and Absolute Maximum Ratings table. This rating applies to single-pulse conditions with junction temperature limited to 150°C. The AONS32106's ruggedness supports fault-tolerant designs in DC/DC converters where inductive energy must be absorbed without device failure.

What is the thermal resistance from junction to case (RθJC) for AONS32106, and how is it measured?

The AONS32106 has R_θJC = 3.4 °C/W, measured with the device mounted to a large heatsink under steady-state conditions (T_J(MAX) = 150°C), as stated in the Thermal Characteristics table. This value reflects the intrinsic thermal path from die to exposed drain pad and is used to calculate maximum power dissipation when heatsinking is applied. The AONS32106's low R_θJC enables >14 W dissipation at T_C = 100°C.

Can AONS32106 be used in synchronous rectification applications?

Yes, the AONS32106 is suitable for synchronous rectification due to its low R_DS(ON) (< 5.3 mΩ), fast switching (t_f = 21 ns, t_r = 15 ns), and well-characterized body diode (V_SD = 0.6–1.0 V, Q_rr = 30 nC). Its DFN 5×6 package provides low parasitic inductance, critical for minimizing voltage spikes during commutation. The AONS32106's gate threshold and dynamic parameters are explicitly validated for such use in the Electrical Characteristics section.

AONS32106 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS32106 FAQ

1.How can I place an order for AONS32106 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS32106 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS32106 reliable?

The price and inventory of AONS32106 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS32106 is usually 5 days.

3.What payment methods are accepted for AONS32106?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS32106 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS32106?

AONS32106 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS32106 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS32106?

For technical support, including AONS32106 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS32106 requirements.

6.How does Aetrix verify that AONS32106 is sourced from the original manufacturer or authorized distributors?

All AONS32106 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS32106 meets industry standards.

7.What is the process for return or replacement of AONS32106?

All AONS32106 units undergo pre-shipment inspection (PSI). If there is an issue with AONS32106, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS32106 part is unused and in its original packaging.

Return procedure for AONS32106:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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