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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS32302

Name: AONS32302
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS32302
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS32302

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS32302.pdf

Description:: MOSFET N-CH 30V 56A/220A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AONS32302 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET in DFN5x6 package, rated for 220A continuous drain current at V_GS=10V, with R_DS(ON) < 1.35 mΩ and gate charge Q_g(10V) = 110–150 nC, used in high-current motor control, OR-ing, and eFuse applications.

For engineers reviewing the AONS32302 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, low R_DS(ON) at 4.5V (≤1.9 mΩ), thermal resistance R_θJC = 1.05°C/W, and validated body-diode recovery (Q_rr = 40 nC, t_rr = 16 ns).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage switching with fast dynamic performance: t_D(on) = 13 ns, t_r = 11 ns, t_D(off) = 78 ns, and t_f = 18 ns under standard 15V drive and 0.75Ω load conditions.

It features a robust body diode with V_SD = 0.66–1.0 V at I_S = 140 A, supports unclamped inductive switching up to E_AS = 245 mJ (L = 0.1 mH), and is characterized across junction temperatures from –55°C to 150°C with normalized R_DS(ON) drift ≤1.8× over that range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V industrial bus and 12V automotive systems.
I_D (V_GS=10V)	220 A - Continuous current rating enabling single-device solutions for high-power OR-ing and eFuse designs.
R_DS(ON) (V_GS=10V)	<1.35 mΩ - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements in compact layouts.
R_DS(ON) (V_GS=4.5V)	<1.9 mΩ - Ensures reliable turn-on with 5V logic-level gate drivers without level-shifting circuitry.
Q_g(10V)	110–150 nC - Defines total gate drive energy needed; enables efficient PWM operation up to ~500 kHz with moderate gate driver strength.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance allows direct mounting to copper heatsinks for >100 W steady-state dissipation.
E_AS	245 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients in motor drives.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height), exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to large-area copper pad; primary current path and thermal conduction path to PCB heatsink.
5	Source (S)	Low-inductance source connection; used for current sensing and feedback in high-side configurations.
6	Gate (G)	Control terminal requiring low-impedance drive; gate resistance R_g = 0.4–1.2 Ω measured internally.

Key Features

Feature	Design Value
100% UIS tested	Each unit validated for unclamped inductive switching up to 245 mJ, ensuring field reliability in motor and solenoid loads.
Low gate charge	Q_g(4.5V) = 54 nC enables fast switching with minimal driver power consumption and reduced EMI generation.
High current capability	220 A continuous rating and 880 A pulsed rating support single-MOSFET solutions in high-density power modules.
RoHS & halogen-free	Complies with IPC-J-STD-609 Class 1 moisture sensitivity and JEDEC J-STD-020D reflow profile for lead-free assembly.

Applications

Motor Control	OR-ing Circuit
Use Scenario: High-efficiency BLDC motor phase leg in industrial automation drives operating at 24V bus voltage. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter topology, handling peak currents >150 A with minimal conduction loss. Use Value: R_DS(ON) < 1.35 mΩ reduces I²R losses by >30% vs. comparable 3.5 mΩ MOSFETs, improving thermal margin at 100% duty cycle.	Use Scenario: Redundant 12V/24V power supply OR-ing in telecom base station backplane. IC Role / Device Role / Timing Role: Bidirectional reverse-current blocking element with fast body-diode recovery (t_rr = 16 ns). Use Value: Q_rr = 40 nC minimizes reverse-recovery spikes during hot-swap transitions, reducing EMI filter burden.
eFuse Protection	Hot-Swap Controller
Use Scenario: Programmable current-limiting eFuse in server motherboard 12V VRM output rail. IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator. Use Value: 220 A rating and 100% R_g tested enable precise ±3% current limit accuracy over temperature and lifetime.	Use Scenario: Inrush current limiting and fault isolation in enterprise storage shelf power distribution. IC Role / Device Role / Timing Role: High-side switch with integrated current monitoring via Kelvin source connection (pin 5). Use Value: Exposed drain pad and R_θJC = 1.05°C/W allow direct thermal coupling to chassis, sustaining 150 A for >10 s during hot-plug events.

Motor Control

OR-ing Circuit

Use Scenario: High-efficiency BLDC motor phase leg in industrial automation drives operating at 24V bus voltage.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter topology, handling peak currents >150 A with minimal conduction loss.

Use Value: R_DS(ON) < 1.35 mΩ reduces I²R losses by >30% vs. comparable 3.5 mΩ MOSFETs, improving thermal margin at 100% duty cycle.

Use Scenario: Redundant 12V/24V power supply OR-ing in telecom base station backplane.

IC Role / Device Role / Timing Role: Bidirectional reverse-current blocking element with fast body-diode recovery (t_rr = 16 ns).

Use Value: Q_rr = 40 nC minimizes reverse-recovery spikes during hot-swap transitions, reducing EMI filter burden.

eFuse Protection

Hot-Swap Controller

Use Scenario: Programmable current-limiting eFuse in server motherboard 12V VRM output rail.

IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator.

Use Value: 220 A rating and 100% R_g tested enable precise ±3% current limit accuracy over temperature and lifetime.

Use Scenario: Inrush current limiting and fault isolation in enterprise storage shelf power distribution.

IC Role / Device Role / Timing Role: High-side switch with integrated current monitoring via Kelvin source connection (pin 5).

Use Value: Exposed drain pad and R_θJC = 1.05°C/W allow direct thermal coupling to chassis, sustaining 150 A for >10 s during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7004TRPBF	R_DS(ON) = 1.45 mΩ @ 10V; Q_g = 125 nC; DFN5x6 but no 100% UIS test specified.	Lower avalanche ruggedness margin; not recommended for unclamped inductive loads above 100 mJ.	Acceptable where system-level clamping exists and thermal budget permits +0.1 mΩ R_DS(ON).
SiR626DP-T1-GE3	R_DS(ON) = 1.25 mΩ @ 10V; Q_g = 132 nC; same DFN5x6 footprint but higher gate resistance (R_g = 1.5 Ω typ).	Slower switching (t_f = 22 ns) increases switching loss at >200 kHz; body diode Q_rr = 45 nC.	Preferred when lowest R_DS(ON) dominates, and gate drive strength accommodates higher Q_g.

Compared with IRFH7004TRPBF and SiR626DP-T1-GE3, the AONS32302 delivers superior UIS ruggedness and lower gate resistance while maintaining competitive R_DS(ON), making it optimal for high-reliability motor and eFuse designs where transient immunity is critical.

Availability

AONS32302 is available at Aetrix Electronics and suitable for motor control, OR-ing circuits, and eFuse protection requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for AONS32302 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS32302 belongs to AOS's Trench Power MOSFET family, engineered for ultra-low R_DS(ON) and high-current density in compact DFN packages targeting high-efficiency power conversion and protection.

FAQ

What is the maximum continuous drain current rating for AONS32302 at 100°C case temperature?

The AONS32302 supports 220 A continuous drain current at T_C = 100°C per datasheet Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature ≤150°C. Derating curves in Figure 13 confirm 140 A at T_C = 125°C, validating its use in thermally constrained environments.

Does AONS32302 have a Kelvin source connection for accurate current sensing?

Yes, the AONS32302 features a dedicated Kelvin source terminal (pin 5) separate from the main source pads (pins 1–4, 7–8), enabling precise current sensing with minimal impact from source inductance and layout parasitics. This design supports high-accuracy eFuse and motor phase current monitoring.

Is AONS32302 suitable for 5V gate drive applications?

Yes, the AONS32302 is fully specified down to V_GS = 4.5V, with R_DS(ON) < 1.9 mΩ and guaranteed gate threshold voltage V_GS(th) = 1.3–2.3 V. It switches reliably with standard 5V microcontroller outputs and requires no external level-shifter in logic-level driven eFuse or OR-ing circuits.

What is the body diode forward voltage of AONS32302 at 140A?

The AONS32302 body diode forward voltage V_SD is 0.66–1.0 V at I_S = 140 A and T_J = 25°C, per Electrical Characteristics table. At elevated temperature (125°C), V_SD drops to ~0.55 V, supporting efficient synchronous rectification and reverse-current blocking in OR-ing topologies.

How is avalanche ruggedness verified for AONS32302?

Every AONS32302 unit undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD24-11, with E_AS = 245 mJ at L = 0.1 mH and T_J = 25°C. This qualification ensures survivability during inductive turn-off transients in motor drives and solenoid controls without external snubbers.

AONS32302 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Ta), 220A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6060 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 119W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS32302 FAQ

1.How can I place an order for AONS32302 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS32302 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS32302 reliable?

The price and inventory of AONS32302 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS32302 is usually 5 days.

3.What payment methods are accepted for AONS32302?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS32302 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS32302?

AONS32302 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS32302 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS32302?

For technical support, including AONS32302 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS32302 requirements.

6.How does Aetrix verify that AONS32302 is sourced from the original manufacturer or authorized distributors?

All AONS32302 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS32302 meets industry standards.

7.What is the process for return or replacement of AONS32302?

All AONS32302 units undergo pre-shipment inspection (PSI). If there is an issue with AONS32302, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS32302 part is unused and in its original packaging.

Return procedure for AONS32302:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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