Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS32306

Name: AONS32306
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS32306
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AONS32306

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS32306.pdf

Description:: MOSFET N-CH 30V 36A 8DFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,726

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AONS32306 from Alpha & Omega Semiconductor is a 30V N-channel Trench MOSFET optimized for high-current load switching and battery protection circuits, featuring R_DS(ON) < 3.6 mΩ at V_GS = 10 V, 36 A continuous drain current, and DFN5x6 package with exposed thermal pad for enhanced power dissipation.

For engineers reviewing the AONS32306 datasheet, pinout, applications, or equivalent options, key selection criteria include low on-resistance at 4.5 V gate drive, 100% UIS-tested ruggedness, and thermal performance validated under pulsed and steady-state conditions per JEDEC standards.

Technical Context

The AONS32306 employs advanced trench-gate process technology to achieve low R_DS(ON) while maintaining fast switching speed (t_D(off) = 52 ns, t_f = 11.5 ns) and robust unclamped inductive switching capability (E_AS = 80 mJ). Its gate threshold voltage (1.1–2.1 V) enables reliable turn-on with standard logic-level drivers.

Thermal design is supported by R_θJC = 2.5 °C/W and R_θJA = 55 °C/W (1 in² FR-4, 2 oz Cu), enabling operation up to 150 °C junction temperature. The device is rated for 100% R_g testing and includes body-diode recovery parameters (Q_rr = 19 nC, t_rr = 11 ns) critical for synchronous rectification and reverse-battery protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 24 V automotive and industrial bus systems.
I_D (V_GS = 10 V)	36 A - Continuous current rating limited by package thermal capacity, not silicon.
R_DS(ON) (V_GS = 10 V)	< 3.6 mΩ - Enables <100 mW conduction loss at 10 A, reducing heatsink requirements.
R_DS(ON) (V_GS = 4.5 V)	< 4.7 mΩ - Ensures full enhancement with 5 V microcontroller GPIOs without level-shifting.
Q_g(10 V)	63–90 nC - Gate charge value directly impacts driver sizing and switching loss in PWM applications.
E_AS	80 mJ - Energy rating verified per unclamped inductive switching test, supporting fault-tolerant load switch designs.
R_θJC	2.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >30 W power handling.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm × 0.95 mm), thermally enhanced with exposed copper drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D)	All top-side pins and entire bottom thermal pad are internally connected to drain - requires PCB copper pour tied to system ground plane only if referenced to ground; otherwise isolated for high-side configuration.
Source (S)	Source (S)	Pin 1 only - dedicated source terminal for Kelvin sensing or low-inductance source return path.
Gate (G)	Gate (G)	Pin 3 only - single gate input with R_g = 1–3 Ω typical; layout must minimize gate loop inductance for clean switching.

Key Features

Feature	Design Value
100% UIS tested	Each unit validated to withstand 80 mJ unclamped inductive energy - eliminates field failure risk in motor or solenoid load disconnect.
Low R_DS(ON) at 4.5 V	Sub-4.7 mΩ on-resistance ensures full enhancement with 5 V logic, enabling direct MCU control without external drivers.
Exposed drain thermal pad	Bottom-side copper pad delivers 2.5 °C/W junction-to-case resistance - supports >30 W continuous dissipation with minimal PCB area.
Body diode with fast recovery	t_rr = 11 ns and Q_rr = 19 nC enable efficient reverse-current commutation in bidirectional battery protection and OR-ing circuits.
RoHS and halogen-free	Compliant with IPC/JEDEC J-STD-609A Class 1 moisture sensitivity and EU RoHS Directive 2011/65/EU Annex II.

Applications

Battery Protection Circuit	High-Current Load Switch
Use Scenario: Reverse-polarity and overcurrent protection in 24 V Li-ion battery packs for portable medical devices and power tools. IC Role / Device Role / Timing Role: High-side N-channel MOSFET used as active OR-ing switch and fault-isolation element controlled by battery management IC. Use Value: Sub-4.7 mΩ R_DS(ON) at 4.5 V gate drive minimizes voltage drop during charging/discharging, preserving pack efficiency and runtime.	Use Scenario: Hot-swap and inrush control for 24 V industrial PLC I/O modules with 20 A peak load current. IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power-up sequencing and short-circuit protection via current-sense feedback. Use Value: 36 A continuous rating and 100% UIS testing ensure reliable interruption of inductive loads without avalanche failure.
Automotive Body Control Module	DC-DC Converter Synchronous Rectifier
Use Scenario: Power distribution to lighting, HVAC actuators, and door locks in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: High-side switch with integrated gate driver interface, supporting PWM dimming and diagnostic reporting. Use Value: Fast 52 ns turn-off delay and low 265 pF Crss reduce shoot-through risk in multiplexed load banks with tight timing margins.	Use Scenario: Secondary-side synchronous rectification in 30 V input, 5–12 V output isolated DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Low-V_DS N-channel rectifier replacing Schottky diodes to improve efficiency at high current density. Use Value: 19 nC Q_rr and 11 ns t_rr limit reverse-recovery losses, increasing converter efficiency by ≥1.2% at 20 A output.

Battery Protection Circuit

High-Current Load Switch

Use Scenario: Reverse-polarity and overcurrent protection in 24 V Li-ion battery packs for portable medical devices and power tools.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET used as active OR-ing switch and fault-isolation element controlled by battery management IC.

Use Value: Sub-4.7 mΩ R_DS(ON) at 4.5 V gate drive minimizes voltage drop during charging/discharging, preserving pack efficiency and runtime.

Use Scenario: Hot-swap and inrush control for 24 V industrial PLC I/O modules with 20 A peak load current.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled power-up sequencing and short-circuit protection via current-sense feedback.

Use Value: 36 A continuous rating and 100% UIS testing ensure reliable interruption of inductive loads without avalanche failure.

Automotive Body Control Module

DC-DC Converter Synchronous Rectifier

Use Scenario: Power distribution to lighting, HVAC actuators, and door locks in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side switch with integrated gate driver interface, supporting PWM dimming and diagnostic reporting.

Use Value: Fast 52 ns turn-off delay and low 265 pF Crss reduce shoot-through risk in multiplexed load banks with tight timing margins.

Use Scenario: Secondary-side synchronous rectification in 30 V input, 5–12 V output isolated DC-DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-V_DS N-channel rectifier replacing Schottky diodes to improve efficiency at high current density.

Use Value: 19 nC Q_rr and 11 ns t_rr limit reverse-recovery losses, increasing converter efficiency by ≥1.2% at 20 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V, 40 A rating, PG-TSDSON-8 package (same 5×6 mm footprint)	Lower on-resistance but higher gate charge (Q_g = 105 nC); requires stronger gate driver	Preferred where ultra-low conduction loss dominates over switching loss and driver capability permits.
Vishay SiR626DP	R_DS(ON) = 3.8 mΩ @ 10 V, 32 A rating, PowerPAK® SO-8L package (different footprint)	SO-8L leads simplify hand-soldering and prototyping but offer inferior thermal performance (R_θJC = 3.5 °C/W)	Selected when board assembly constraints favor leaded packages or thermal demands are below 15 W.

Compared with BSC014N04LS6 and SiR626DP, the AONS32306 balances low R_DS(ON), moderate Q_g, and industry-leading thermal resistance in a compact DFN, making it optimal for space-constrained, thermally demanding load-switch applications requiring both ruggedness and efficiency.

Availability

AONS32306 is available at Aetrix Electronics and suitable for battery protection, high-current load switching, and automotive body control applications requiring stable component supply and long-term lifecycle support.

Supply support for AONS32306 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS32306 belongs to AOS's TrenchMOS™ family, engineered specifically for high-current, low-voltage switching applications where thermal management, ruggedness, and logic-level drive compatibility are critical.

FAQ

What is the maximum continuous drain current rating for AONS32306?

The AONS32306 is rated for 36 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area for the exposed drain pad. At T_A = 25 °C with standard 1 in² FR-4 board, the derated current is 26 A per Figure 13.

Does AONS32306 support 5 V gate drive in practical applications?

Yes, the AONS32306 is fully enhanced at V_GS = 4.5 V, with R_DS(ON) < 4.7 mΩ - confirmed across temperature and current conditions. Its gate threshold voltage range (1.1–2.1 V) ensures reliable turn-on with standard 5 V microcontrollers, eliminating need for gate drivers in many load-switch implementations.

What thermal resistance values apply to AONS32306 in real-world PCB layouts?

AONS32306 specifies R_θJC = 2.5 °C/W (junction-to-case) and R_θJA = 55 °C/W (junction-to-ambient, measured on 1 in² FR-4, 2 oz Cu). Real-world R_θJA depends on PCB copper area and airflow; using a 2 in² thermal pad reduces R_θJA to ~40 °C/W, enabling >25 W continuous power dissipation.

Is AONS32306 suitable for unclamped inductive switching (UIS) applications?

Yes - every AONS32306 unit undergoes 100% UIS testing to 80 mJ at T_J = 150 °C (L = 0.1 mH). This validation ensures safe operation during inductive load disconnection in motor drives, solenoid controls, and hot-swap circuits without external snubbers.

How does the body diode performance of AONS32306 compare to standard Schottky diodes?

The AONS32306 body diode has V_SD = 0.7–1.0 V and t_rr = 11 ns at I_F = 20 A, offering lower forward voltage than most 30 V Schottkys (typically 0.45–0.55 V) but significantly faster recovery than standard PN diodes. It is optimized for synchronous rectification where low Q_rr (19 nC) matters more than ultra-low V_F.

AONS32306 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS32306 FAQ

1.How can I place an order for AONS32306 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS32306 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS32306 reliable?

The price and inventory of AONS32306 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS32306 is usually 5 days.

3.What payment methods are accepted for AONS32306?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS32306 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS32306?

AONS32306 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS32306 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS32306?

For technical support, including AONS32306 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS32306 requirements.

6.How does Aetrix verify that AONS32306 is sourced from the original manufacturer or authorized distributors?

All AONS32306 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS32306 meets industry standards.

7.What is the process for return or replacement of AONS32306?

All AONS32306 units undergo pre-shipment inspection (PSI). If there is an issue with AONS32306, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS32306 part is unused and in its original packaging.

Return procedure for AONS32306:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…