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Alpha & Omega Semiconductor Inc. AONS32314
- Part No.:
- AONS32314
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AONS32314.pdf
- Description:
- N
- Quantity:
- Payment:
- Shipping:
Inventory:9,409
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Product details
Overview
AONS32314 from Alpha & Omega Semiconductor is a 30V N-channel MOSFET in DFN5x6 package, rated for 32A continuous drain current at VGS=10V, with RDS(ON) < 8.7mΩ (VGS=10V) and < 12.3mΩ (VGS=4.5V), designed for high-efficiency notebook AC-in load switching and battery protection charge/discharge circuits.
For engineers reviewing the AONS32314 datasheet, pinout, applications, or equivalent options, key selection criteria include its 30V VDS, 32A ID rating, low gate charge (Qg=22–32nC at 10V), 100% UIS-tested ruggedness, and DFN5x6 thermal performance with RθJC = 5°C/W.
Technical Context
The AONS32314 employs advanced trench MOSFET technology to achieve low on-resistance and high current density in a thermally enhanced DFN5x6 package. Its gate threshold voltage (1.25–2.25V) enables robust 4.5V logic-level drive compatibility while maintaining tight VGS(th) distribution.
Dynamic parameters are optimized for fast switching: td(on) = 6.5ns, tr = 2.5ns, td(off) = 22.5ns, and tf = 3ns under standard 15V VGS, 15V VDS, 20A ID conditions. Body diode recovery (trr = 7.5ns, Qrr = 9.0nC) supports synchronous rectification and bidirectional current handling in battery protection ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage for 5V/12V system rail switching and battery-side isolation |
| ID (VGS=10V) | 32A - Continuous current capability enabling single-device support for high-power notebook AC-in loads |
| RDS(ON) (VGS=10V) | < 8.7mΩ - Low conduction loss yielding ≤2.8W dissipation at 32A, critical for thermally constrained DFN layouts |
| RDS(ON) (VGS=4.5V) | < 12.3mΩ - Ensures full enhancement with 3.3V/4.5V controller outputs without gate boosting |
| Qg (10V) | 22–32nC - Enables efficient 1–2MHz PWM operation with moderate gate driver strength (e.g., 1–2A peak) |
| EAS | 27mJ - 100% unclamped inductive switching tested, supporting reliable operation in transient-heavy load-switch applications |
| RθJC | 5°C/W - Junction-to-case thermal resistance allows direct heatsink attachment via exposed drain pad for >30W power handling |
Pinout & Package
Package: DFN5x6 (5.0mm × 6.0mm × 0.95mm), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked by notch or dot; top-side terminals labeled per schematic symbol.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Parallel-connected internal drain terminals tied to exposed copper pad - primary current path and thermal conduction path to PCB |
| 5 | Gate (G) | Control input requiring 10V for full enhancement; gate resistance Rg = 1–3Ω measured internally |
| 6 | Source (S) | Reference node for gate drive and current sensing; connects to system ground or battery negative in load-switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees 27mJ avalanche energy survival without degradation - eliminates need for external clamping in inductive load transients |
| 100% Rg tested | Ensures consistent gate charge profile and switching timing across production lots, critical for multi-phase or paralleled MOSFET designs |
| RoHS & Halogen-Free | Complies with IPC-1752A material declarations and JEDEC J-STD-609A Class 1 moisture sensitivity (MSL3), enabling lead-free reflow assembly |
| Low Qgd/Qg ratio | Qgd = 4nC / Qg(10V) ≈ 12–18% - minimizes Miller plateau duration and improves hard-switching EMI behavior |
Applications
| Notebook AC-In Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: High-side power switch controlling 19V AC adapter input to system rail, enabling hot-plug detection and overvoltage shutdown. IC Role / Device Role / Timing Role: Primary load-switch MOSFET controlled by dedicated power management IC (e.g., TI TPS25982) with precise current limiting and fault reporting. Use Value: 32A rating and <8.7mΩ RDS(ON) minimize voltage drop (<330mV) and self-heating during sustained 20A adapter loads. | Use Scenario: Bidirectional current path in smart battery packs for charge/discharge control, integrated with fuel gauge and protection IC (e.g., TI BQ769x0). IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair (with second AONS32314) providing reverse-current blocking and short-circuit interrupt capability. Use Value: 100% UIS-tested ruggedness and low 12.3mΩ RDS(ON) at 4.5V enable reliable operation under 3.3V microcontroller gate drive during cell-balancing events. |
| USB-C Power Delivery Sink | Industrial 24V DC Load Switch |
Use Scenario: In-line power path switch for USB-C PD 3.0 sink applications up to 100W, coordinating with PD controller (e.g., STUSB4500) for VBUS enable/disable. IC Role / Device Role / Timing Role: Fast-turning-on load switch responding to PD controller's GPIO within <100μs to meet USB PD specification timing requirements. Use Value: 2.5ns rise time and 3ns fall time ensure clean VBUS ramp-up/down without overshoot, reducing EMI and improving PD negotiation stability. | Use Scenario: High-reliability 24V industrial PLC I/O module output stage, switching solenoids or indicator LEDs with surge immunity. IC Role / Device Role / Timing Role: Single high-side switch driven by isolated digital output (e.g., TI ISO6741) with active current limiting and thermal foldback. Use Value: RθJC = 5°C/W and 150°C max junction temperature allow sustained 25A operation with minimal heatsinking on 2oz copper PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N04LS6 | VDS=40V, RDS(ON)=1.0mΩ@10V (lower), Qg=34nC (higher), same DFN5x6 footprint | Higher voltage margin but higher gate drive energy; better for 36V systems, less optimal for 30V-constrained space | Select when 40V rating and ultra-low RDS(ON) outweigh gate drive overhead in 24–36V industrial loads |
| Vishay SiR872DP | VDS=30V, RDS(ON)=9.3mΩ@10V (slightly higher), Qg=26nC, RθJC=4.5°C/W, same DFN5x6 | Near-identical electrical specs but superior thermal resistance; requires identical layout but delivers ~10% higher power handling | Prefer when thermal headroom is critical and minor RDS(ON) increase is acceptable in high-ambient environments |
Compared with AONS32314, BSC010N04LS6 offers higher voltage safety margin at cost of increased switching loss, while SiR872DP trades marginal on-resistance increase for measurable thermal advantage - both require no PCB redesign but differ in thermal and drive optimization priorities.
Availability
AONS32314 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and USB-C PD sink applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for AONS32314 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AONS32314 belongs to AOS's advanced trench N-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching where thermal efficiency, ruggedness, and logic-level drive compatibility are essential.
FAQ
What is the maximum continuous drain current rating for AONS32314 at 100°C case temperature?
The AONS32314 supports 30A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its RθJC = 5°C/W and TJ(MAX) = 150°C. At 25°C case temperature, the rating increases to 32A. Designers must verify PCB copper area and airflow to sustain the intended current in actual AONS32314 deployments.
Does AONS32314 support 3.3V gate drive in practice?
The AONS32314 has a gate threshold voltage range of 1.25–2.25V and RDS(ON) < 12.3mΩ at VGS = 4.5V, but it is not fully enhanced at 3.3V. At 3.3V, RDS(ON) rises significantly (typical ~25mΩ), increasing conduction loss. For reliable 3.3V logic-level operation, a gate driver or level shifter is recommended to ensure ≥4.5V gate bias for AONS32314.
Is AONS32314 qualified for automotive applications?
The AONS32314 is not AEC-Q101 qualified and is intended for commercial and industrial applications only. Its datasheet specifies operating junction temperature from –55°C to +150°C, but reliability testing (HTOL, UHAST, TC) was performed per commercial standards. For automotive use, AOS offers AEC-Q101-qualified equivalents such as the AONR21321, not the AONS32314.
What is the body diode forward voltage of AONS32314 at 30A?
The AONS32314 body diode forward voltage is specified as VSD = 0.7–1.0V at IS = 30A and TJ = 25°C, per the Electrical Characteristics table. This diode is integral to the MOSFET structure and supports bidirectional current flow in battery protection and synchronous rectification, though its recovery characteristics (trr = 7.5ns, Qrr = 9.0nC) must be considered in high-frequency designs.
How is thermal performance validated for AONS32314 in the DFN5x6 package?
Thermal performance of the AONS32314 is validated using standardized JEDEC test boards: RθJA = 55°C/W measured on 1in² FR-4 with 2oz copper (still air), and RθJC = 5°C/W measured with device mounted to large heatsink. Transient thermal impedance curves (Figures 11 and 15) confirm pulse power handling up to 100W for sub-millisecond durations, directly supporting AONS32314 use in intermittent high-load scenarios.
AONS32314 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1420 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AONS32314 FAQ
1.How can I place an order for AONS32314 through Aetrix?
Please submit a Request for Quotation (RFQ) for AONS32314 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONS32314 reliable?
The price and inventory of AONS32314 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS32314 is usually 5 days.
3.What payment methods are accepted for AONS32314?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS32314 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONS32314?
AONS32314 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONS32314 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONS32314?
For technical support, including AONS32314 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS32314 requirements.
6.How does Aetrix verify that AONS32314 is sourced from the original manufacturer or authorized distributors?
All AONS32314 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS32314 meets industry standards.
7.What is the process for return or replacement of AONS32314?
All AONS32314 units undergo pre-shipment inspection (PSI). If there is an issue with AONS32314, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONS32314 part is unused and in its original packaging.
Return procedure for AONS32314:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AONS32314 Tags
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BSZ180P03NS3EGATMA1
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AO4419
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FDMS7680
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