Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AONS36348

Part No.:
AONS36348
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAONS36348.pdf
Description:
MOSFET N-CH 30V 24A/50A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,242

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AONS36348 from Alpha & Omega Semiconductor is a 30V, 50A N-channel Trench Power MOSFET in DFN5x6 package with RDS(ON) < 7 mΩ at VGS = 10 V and < 11.5 mΩ at VGS = 4.5 V, optimized for high-efficiency DC/DC converters in computing and telecom power supplies.

For engineers reviewing the AONS36348 datasheet, pinout, applications, or equivalent options, key selection factors include its low gate charge (Qg = 10–20 nC), 100% UIS-tested ruggedness, body-diode reverse recovery performance (Qrr = 13 nC), and thermal resistance RθJC = 4.8 °C/W for high-power-density POL designs.

Technical Context

The AONS36348 employs Trench Power MOSFET technology to achieve low RDS(ON) and high current capability while maintaining fast switching: td(on) = 5 ns, tr = 2.5 ns, td(off) = 17 ns, and tf = 2.5 ns under standard test conditions (VGS = 10 V, VDS = 15 V, RGEN = 3 Ω).

Its dynamic parameters are characterized with Ciss = 800 pF, Coss = 240 pF, and Crss = 35 pF at VDS = 15 V, supporting high-frequency operation in synchronous buck and isolated forward topologies where low capacitive losses and controlled dv/dt are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems
ID (VGS = 10 V)50 A - Continuous conduction capability at full gate drive for high-current POL stages
RDS(ON) (VGS = 10 V)< 7 mΩ - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements
RDS(ON) (VGS = 4.5 V)< 11.5 mΩ - Ensures robust operation with 5 V gate drivers in logic-level control architectures
Qg (10 V)10–20 nC - Low total gate charge minimizes driver power and enables >1 MHz switching
RθJC4.8 °C/W - Junction-to-case thermal resistance supports direct heatsink mounting for thermal management
EAS9 mJ - Avalanche energy rating confirms ruggedness under unclamped inductive switching stress

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), exposed drain pad on bottom side for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; low gate resistance (Rg = 0.5–1.5 Ω) reduces ringing and EMI
2, 3, 4, 6, 7, 8 (D)DrainHigh-current output path; multiple pins and exposed pad minimize inductance and thermal impedance
5 (S)SourceReference node for gate drive; tied to power ground plane in synchronous rectifier configurations

Key Features

FeatureDesign Value
100% UIS testedGuarantees single-pulse avalanche survivability up to 9 mJ without derating in real-world inductive turn-off events
Low Qg/Qgd ratioQgd = 2 nC and Qg(10 V) ≤ 20 nC yield Miller plateau immunity and reduced shoot-through risk in half-bridge layouts
Body diode with low QrrQrr = 13 nC and trr = 10 ns enable efficient synchronous rectification and reduce dead-time losses
RoHS and halogen-freeComplies with IPC-1752A material declaration standards for industrial and telecom end-equipment compliance

Applications

Server VRM Output StageTelecom Isolated DC/DC Primary Switch

Use Scenario: High-current, high-frequency synchronous buck converter delivering 50 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: RDS(ON) < 7 mΩ and RθJC = 4.8 °C/W allow >95% efficiency and junction temperature rise < 40°C at 50 A continuous load.

Use Scenario: Primary-side switch in 300–500 W isolated forward or active-clamp forward converter for 48 V telecom systems.

IC Role / Device Role / Timing Role: Main switching transistor handling 30 V bus with fast turn-off (tf = 2.5 ns) to minimize overlap losses.

Use Value: Low Coss = 240 pF and Crss = 35 pF reduce capacitive switching loss and improve ZVS initiation margin.

Industrial POL ModuleGPU Power Delivery System

Use Scenario: Compact 12 V input, 3.3 V/20 A point-of-load module for PLC I/O and sensor interface boards.

IC Role / Device Role / Timing Role: Low-voltage, logic-level driven MOSFET enabling direct 5 V gate drive without level-shifting.

Use Value: RDS(ON) < 11.5 mΩ at VGS = 4.5 V ensures stable regulation and <0.5% output droop under transient load steps.

Use Scenario: Multi-phase GPU core power stage requiring parallel 30 V switches with matched dynamic characteristics.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck phase leg with precise gate timing alignment.

Use Value: Tight Qg tolerance (10–20 nC) and matched td(on)/td(off) ensure balanced current sharing across phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFH5020RDS(ON) = 6.2 mΩ @ 10 V; Qg = 22 nC; DFN5x6 packageSlightly higher gate charge increases driver loss at >1 MHz; identical thermal footprintPreferred when lowest RDS(ON) is prioritized over switching speed
SiR626DPRDS(ON) = 7.2 mΩ @ 10 V; Qg = 17 nC; PowerPAK® SO-8L packageLarger SO-8L footprint requires PCB redesign; higher RθJA = 55 °C/W limits ambient-limited powerSelected when legacy SO-8L layout reuse is required and thermal headroom exists

Compared with IRFH5020 and SiR626DP, the AONS36348 delivers the best balance of low RDS(ON), moderate Qg, and industry-standard DFN5x6 thermal performance-making it optimal for space-constrained, high-efficiency 30 V power stages where both conduction and switching losses must be minimized.

Availability

AONS36348 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial POL modules requiring stable component supply, consistent parametric performance, and long-term production availability.

Supply support for AONS36348 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS36348 belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-current, high-frequency DC/DC conversion where low RDS(ON), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for AONS36348 at TC = 100°C?

The AONS36348 has a maximum continuous drain current ID of 30 A at case temperature TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to junction-to-case thermal resistance (RθJC = 4.8 °C/W) and maximum junction temperature limit of 150°C. The AONS36348 maintains safe operation under sustained high-current loads when properly heatsinked.

Does AONS36348 support logic-level gate drive?

Yes, the AONS36348 supports logic-level gate drive with guaranteed RDS(ON) < 11.5 mΩ at VGS = 4.5 V, making it compatible with standard 5 V microcontroller outputs and gate drivers without level-shifting circuitry. Its gate threshold voltage VGS(th) ranges from 1.2 V to 2.1 V, ensuring reliable turn-on with margin even at elevated temperatures. This behavior is confirmed in the AONS36348 datasheet's Electrical Characteristics table.

What is the body diode forward voltage of AONS36348 at IS = 30 A?

The body diode forward voltage VSD of the AONS36348 is 0.7–1.0 V at IS = 30 A and TJ = 25°C, per the Electrical Characteristics table. This low VSD reduces conduction loss during synchronous rectifier dead-time and improves efficiency in bidirectional or freewheeling applications. The AONS36348's body diode also exhibits fast reverse recovery (trr = 10 ns, Qrr = 13 nC), minimizing associated switching loss.

Is AONS36348 qualified for automotive applications?

No, the AONS36348 is not AEC-Q101 qualified and is intended for computing, telecom, and industrial applications only. Its datasheet explicitly excludes use in life-support devices or automotive safety-critical systems. For automotive-grade alternatives, refer to AOS's AEC-Q101-qualified Trench MOSFET portfolio-AONS36348 itself lacks automotive qualification documentation, temperature cycling validation, or failure-in-time (FIT) data required for automotive deployment.

How is thermal performance measured for AONS36348 in the datasheet?

Thermal performance of the AONS36348 is characterized using two metrics: RθJC = 4.8 °C/W (junction-to-case, measured with large heatsink) and RθJA = 50 °C/W (junction-to-ambient, measured on 1 in² FR-4 board with 2 oz copper). These values define power derating curves in Figures 12 and 13. The AONS36348's exposed drain pad enables direct thermal coupling to heatsinks, and its RθJC value is used to calculate junction temperature rise under forced or conductive cooling conditions.

AONS36348 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
6.2W (Ta), 26W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AONS36348 FAQ

1.How can I place an order for AONS36348 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS36348 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS36348 reliable?

The price and inventory of AONS36348 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS36348 is usually 5 days.

3.What payment methods are accepted for AONS36348?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS36348 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS36348?

AONS36348 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS36348 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS36348?

For technical support, including AONS36348 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS36348 requirements.

6.How does Aetrix verify that AONS36348 is sourced from the original manufacturer or authorized distributors?

All AONS36348 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS36348 meets industry standards.

7.What is the process for return or replacement of AONS36348?

All AONS36348 units undergo pre-shipment inspection (PSI). If there is an issue with AONS36348, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS36348 part is unused and in its original packaging.

Return procedure for AONS36348:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AONS36348 Tags

  • AONS36348
  • AONS36348 PDF
  • AONS36348 Datasheet
  • AONS36348 Specifications
  • AONS36348 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AONS36348
  • Buy AONS36348
  • AONS36348 Price
  • AONS36348 Distributor
  • AONS36348 Supplier
  • AONS36348 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER