Alpha & Omega Semiconductor Inc. AONS62614T

Overview

AONS62614T from Alpha & Omega Semiconductor is a 60V, 170A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It delivers R_DS(ON) < 2.5 mΩ at V_GS = 10 V and < 3.4 mΩ at V_GS = 4.5 V, with 100% UIS and R_g tested, and operates up to T_J = 175°C.

For engineers reviewing the AONS62614T datasheet, pinout, applications, or equivalent options, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), low gate charge (Q_g(10V) = 64–90 nC), and DFN5x6 thermal performance (R_θJC = 1.05°C/W) for high-current power stages.

Technical Context

The AONS62614T employs AlphaSGT™ (Alpha Super Junction Trench) technology to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS = 265 mJ) and fast switching dynamics (t_d(off) = 44 ns, t_f = 12.5 ns). Its gate threshold voltage range (1.2–2.2 V at 25°C) enables reliable turn-on with standard logic-level drivers.

Thermal design is supported by a DFN5x6 package with exposed drain pad, delivering R_θJC = 1.05°C/W and R_θJA = 50°C/W on 1-in² FR-4 board. The device features fully characterized dynamic parameters including C_iss = 3660 pF, C_oss = 1160 pF, and Q_gd/Q_gs = 11.5/8.5 nC - critical for optimizing EMI and efficiency in hard-switched topologies.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked via top-side notch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP026N06N and SiR626DP, the AONS62614T offers superior thermal performance (R_θJC = 1.05°C/W), guaranteed UIS robustness, and tighter V_GS(th) distribution - making it optimal for space-constrained, high-reliability 60 V power stages where junction temperature control and transient immunity are critical.

Availability

AONS62614T is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and automotive body control modules requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for AONS62614T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS62614T belongs to AOS's AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-current, high-frequency power conversion where low R_DS(ON), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for the AONS62614T at 100°C case temperature?

The AONS62614T supports 170 A continuous drain current at T_C = 25°C, de-rating linearly to approximately 120 A at T_C = 100°C per the current de-rating curve (Figure 13). This rating assumes proper PCB copper area and thermal vias under the exposed drain pad to maintain R_θJC = 1.05°C/W. The AONS62614T must be mounted on ≥1 in² 2 oz. copper with ≥6 thermal vias for this performance.

Does the AONS62614T support logic-level gate drive from a 3.3 V microcontroller?

Yes - the AONS62614T has a gate threshold voltage V_GS(th) of 1.2–2.2 V at 25°C, ensuring full enhancement with 3.3 V logic-level drive. At V_GS = 4.5 V, R_DS(ON) remains < 3.4 mΩ, enabling usable conduction performance even without 10 V gate drive. The AONS62614T thus eliminates need for external level shifters in many MCU-driven power stages.

What is the avalanche energy rating of the AONS62614T, and is it production-tested?

The AONS62614T is rated for 265 mJ of single-pulse avalanche energy (E_AS) with L = 0.3 mH, and every unit undergoes 100% unclamped inductive switching (UIS) testing during production. This ensures field reliability in inductive load turn-off events such as motor phase commutation or relay coil de-energization - a key differentiator of the AONS62614T versus non-tested alternatives.

Can the AONS62614T be used in a high-side switching configuration?

Yes - the AONS62614T supports high-side operation when paired with a gate driver capable of providing sufficient V_GS relative to the source potential (e.g., bootstrap or isolated driver). Its 20 V maximum gate-source voltage and low Q_gd/Q_gs ratio (11.5/8.5 nC) reduce Miller-induced shoot-through risk. Layout care is required to minimize source inductance, especially in high-di/dt applications like motor drives using the AONS62614T.

What thermal resistance values apply to the AONS62614T in typical PCB layouts?

The AONS62614T specifies R_θJC = 1.05°C/W (junction-to-case) and R_θJA = 50°C/W (junction-to-ambient) measured on a 1 in² FR-4 board with 2 oz. copper. For production designs, R_θJA will vary based on copper area, number of thermal vias, and airflow; however, the low R_θJC enables effective heatsinking via the exposed drain pad - a key advantage of the AONS62614T's DFN5x6 package.