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Alpha & Omega Semiconductor Inc. AOSD21307
- Part No.:
- AOSD21307
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AOSD21307.pdf
- Description:
- MOSFET 2P-CH 30V 9A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:8,203
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Product details
Overview
AOSD21307 from Alpha & Omega Semiconductor is a 30V dual P-channel MOSFET in SO-8 package, rated for -9A continuous drain current at VGS = -10V, with RDS(ON) < 16mΩ at -10V and < 28mΩ at -4.5V, designed for notebook AC-in load switching and battery protection charge/discharge circuits.
For engineers reviewing the AOSD21307 datasheet, pinout, applications, or equivalent options, key selection criteria include verified avalanche energy (54mJ), gate charge (36.5–51nC at 10V), body diode forward voltage (-0.7 to -1V), thermal resistance (RθJA = 90°C/W), and 100% UIS and Rg testing.
Technical Context
This dual P-channel device integrates two matched enhancement-mode MOSFETs in a single SO-8 package, sharing common source terminals per channel (S1/S2) and independent gates (G1/G2) and drains (D1/D2). Its advanced trench process enables low on-resistance while maintaining robust unclamped inductive switching capability (IAS = -36A, EAS = 54mJ).
The device operates across -55°C to +150°C junction temperature range, supports ±25V gate-source voltage, and features tightly specified gate threshold (-1.3 to -2.3V) and low gate resistance (4.5–9Ω), enabling fast, controlled turn-on/off in synchronous buck or OR-ing configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30V maximum drain-source voltage - defines safe blocking capability in negative-rail applications. |
| ID (VGS=-10V) | -9A continuous drain current - supports high-side load switching up to 9A with adequate heatsinking. |
| RDS(ON) (-10V) | < 16mΩ - minimizes conduction loss in battery protection FETs or AC-in switches. |
| RDS(ON) (-4.5V) | < 28mΩ - ensures usable on-state performance with logic-level gate drive. |
| EAS | 54mJ avalanche energy - validated robustness against inductive transients without external snubbers. |
| Qg (10V) | 36.5–51nC - determines gate driver power and switching speed in high-frequency DC/DC control. |
| RθJA | 90°C/W - sets thermal derating limit on standard FR-4 PCBs with 2oz copper. |
Pinout & Package
Package: SO-8 (Surface-Mount Small Outline Integrated Circuit, 150mil width), thermally enhanced layout with exposed leadframe for improved power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls turn-on/off of first P-MOSFET; requires negative gate drive relative to S1. |
| 2 (D1) | Drain of Channel 1 | High-side connection point for load or input rail; tied to internal die drain metallization. |
| 3 (S1) | Source of Channel 1 | Reference node for Channel 1; commonly connected to system ground or battery positive in high-side switch. |
| 4 (S2) | Source of Channel 2 | Independent source terminal for second channel; enables dual independent switching or parallel operation. |
| 5 (D2) | Drain of Channel 2 | Second high-side output; electrically isolated from D1 except through PCB routing. |
| 6 (G2) | Gate of Channel 2 | Separate gate control allows asynchronous or synchronized operation of both channels. |
| 7, 8 | Thermal Pad / Exposed Leadframe | Internally connected to S1 and S2; must be soldered to PCB copper pour for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS Tested | Each unit validated for unclamped inductive switching survival - eliminates field failure risk in motor or solenoid drive. |
| 100% Rg Tested | Gate resistance measured and binned (4.5–9Ω) - ensures consistent switching timing and driver sizing. |
| Advanced Trench Technology | Enables <16mΩ RDS(ON) at -10V in SO-8 - achieves performance previously requiring larger packages. |
| RoHS & Halogen-Free | Complies with environmental regulations without compromising thermal or electrical performance. |
| Body Diode VSD | -0.7 to -1.0V forward drop - reduces reverse recovery loss in synchronous rectification or OR-ing paths. |
Applications
| Notebook AC-in Load Switch | Battery Protection Charge/Discharge |
|---|---|
Use Scenario: Controls AC adapter input path to system power rail, enabling hot-plug detection and overvoltage shutdown. IC Role / Device Role / Timing Role: High-side P-channel load switch with integrated back-to-back configuration for reverse polarity and surge protection. Use Value: Dual-channel architecture allows independent control of input and backup paths, while <16mΩ RDS(ON) limits voltage drop to <150mV at 9A. | Use Scenario: Implements charge/discharge FETs in smart battery packs, isolating cells during fault conditions. IC Role / Device Role / Timing Role: Paired P-MOSFETs act as bidirectional blocking switches in battery management systems (BMS). Use Value: Matched RDS(ON) and 54mJ EAS rating ensure balanced current sharing and reliable fault interruption under short-circuit events. |
| USB-C Power Delivery Sink | Industrial 24V DC Input Protection |
Use Scenario: Provides input overcurrent and reverse-voltage protection for USB-C PD sink controllers accepting up to 20V. IC Role / Device Role / Timing Role: Dual P-FET configured as ideal diode/OR-ing controller for redundant power inputs. Use Value: Low VGS(th) (-1.3 to -2.3V) enables precise turn-on control via dedicated gate drivers, minimizing insertion loss. | Use Scenario: Guards programmable logic controllers (PLCs) and I/O modules against reverse polarity and load dump transients. IC Role / Device Role / Timing Role: High-side switch in 24V industrial power entry stage with integrated avalanche ruggedness. Use Value: 90°C/W RθJA and 150°C max TJ allow operation in sealed enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | -30V, -7.5A, RDS(ON) = 20mΩ @ -10V; SO-8, but no 100% UIS test data published. | Lacks documented avalanche energy rating; less suitable for inductive load switching. | Prefer AOSD21307 where transient robustness is critical; Si7851DP acceptable in resistive-load-only designs. |
| DMC3025LSD-13 | -30V, -10.5A, RDS(ON) = 18mΩ @ -10V; dual P-channel in PowerSO-8, higher RθJA (105°C/W). | Higher thermal resistance limits power handling on same PCB area; different pinout (G1/D1/S1/S2/D2/G2 vs. AOSD21307). | AOSD21307 offers better thermal performance and verified UIS; DMC3025LSD-13 only if footprint compatibility required with existing layout. |
Compared with Si7851DP-T1-GE3 and DMC3025LSD-13, the AOSD21307 delivers superior avalanche ruggedness (54mJ), lower RDS(ON), and tighter gate resistance binning - making it optimal for high-reliability battery and AC-input protection where transient immunity and thermal margin are design priorities.
Availability
AOSD21307 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and industrial 24V DC input protection requiring stable component supply and full traceability.
Supply support for AOSD21307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOSD21307 belongs to AOS's advanced trench P-channel MOSFET product line, engineered specifically for high-current, high-reliability load switching and battery protection applications demanding low on-resistance and proven avalanche capability.
FAQ
What is the maximum continuous drain current rating for AOSD21307?
The AOSD21307 is rated for -9A continuous drain current at TA = 25°C with VGS = -10V. At elevated ambient temperatures (e.g., TA = 70°C), derating applies per its RθJA = 90°C/W specification, reducing usable current to approximately -3.3A under steady-state conditions on a standard FR-4 board.
Does AOSD21307 support logic-level gate drive?
Yes, the AOSD21307 supports logic-level drive with guaranteed RDS(ON) < 28mΩ at VGS = -4.5V and a gate threshold voltage range of -1.3V to -2.3V. This enables direct interface with 3.3V or 5V microcontroller GPIOs when used with appropriate level-shifting or gate driver circuitry.
Is AOSD21307 suitable for reverse polarity protection?
Yes, the AOSD21307 is widely used for reverse polarity protection due to its dual P-channel topology and low RDS(ON). When configured with S1/S2 tied to input supply and D1/D2 feeding the load, it blocks reverse current while introducing minimal forward voltage drop (<150mV at 9A).
What thermal considerations apply to AOSD21307 in SO-8 package?
The AOSD21307 has RθJA = 90°C/W on a 1in² FR-4 board with 2oz copper. To maintain TJ ≤ 150°C at 9A, the PCB must provide ≥250mm² of 2oz copper connected to pins 7–8 (exposed pad). Without thermal relief, power dissipation exceeds 1.2W above 70°C ambient.
Are the two channels of AOSD21307 electrically isolated?
No, the two P-channel MOSFETs in AOSD21307 share no internal isolation: S1 and S2 are separate terminals but not galvanically isolated, and the die resides in a common substrate. They are matched devices intended for coordinated or independent control-not for isolated power domains.
AOSD21307 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1995pF @ 15V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AOSD21307 FAQ
1.How can I place an order for AOSD21307 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOSD21307 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOSD21307 reliable?
The price and inventory of AOSD21307 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOSD21307 is usually 5 days.
3.What payment methods are accepted for AOSD21307?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOSD21307 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOSD21307?
AOSD21307 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOSD21307 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOSD21307?
For technical support, including AOSD21307 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOSD21307 requirements.
6.How does Aetrix verify that AOSD21307 is sourced from the original manufacturer or authorized distributors?
All AOSD21307 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOSD21307 meets industry standards.
7.What is the process for return or replacement of AOSD21307?
All AOSD21307 units undergo pre-shipment inspection (PSI). If there is an issue with AOSD21307, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOSD21307 part is unused and in its original packaging.
Return procedure for AOSD21307:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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