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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOSP21307

Name: AOSP21307
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOSP21307
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOSP21307

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AOSP21307.pdf

Description:: MOSFET P-CH 30V 14A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOSP21307 from Alpha & Omega Semiconductor is a -30V, 14A P-channel MOSFET in SO-8 package with R_DS(ON) < 11.5 mΩ at V_GS = -10 V and < 18.5 mΩ at V_GS = -4.5 V, designed for notebook AC-in load switching and battery protection charge/discharge circuits.

For engineers reviewing the AOSP21307 datasheet, pinout, applications, or equivalent options, key selection criteria include its -30V V_DS, 100% UIS-tested ruggedness, low gate charge (Q_g = 35–50 nC), body-diode reverse recovery performance (t_rr = 13.3 ns, Q_rr = 20 nC), and thermal resistance (R_θJA = 75°C/W).

Technical Context

This P-channel trench MOSFET operates with a gate threshold voltage of -1.3 to -2.3 V and supports robust unclamped inductive switching (UIS) up to 54 mJ at T_J = 125°C. Its low R_DS(ON) enables high-efficiency power path control in compact DC/DC and battery management systems.

The device features integrated body diode with V_SD = -0.7 to -1.0 V at I_S = -1 A and exhibits stable on-resistance over temperature (±15% variation from 25°C to 125°C). Gate resistance is specified at 4.5–9 Ω, supporting controlled turn-on/turn-off timing in synchronous buck or OR-ing configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 3.3 V/5 V logic-controlled power rails
I_D (V_GS = -10 V)	-14 A - Continuous current capability enabling high-side load switch operation without derating at 70°C ambient
R_DS(ON) (V_GS = -10 V)	< 11.5 mΩ - Low conduction loss yielding < 2.3 W dissipation at 14 A, critical for thermally constrained notebooks
Q_g (10 V)	35–50 nC - Enables fast, low-loss switching in high-frequency load-switch applications with minimal gate drive power
t_rr / Q_rr	13.3 ns / 20 nC - Fast body-diode recovery reduces shoot-through risk and EMI in bidirectional battery paths
R_θJA	75 °C/W - Thermal performance validated on 1-in² FR-4 board with 2 oz copper, supporting 3.1 W steady-state power at T_A = 70°C
E_AS	54 mJ - 100% avalanche-rated energy handling ensures reliability under inductive load transients in portable systems

Pinout & Package

SOIC-8 package with exposed drain pad (top view: pins 1–4 = S, S, S, G; pins 5–8 = D, D, D, D); leads are RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	High-current output node; pins 5–8 and 1–3 internally connected to common drain metallization and exposed pad
4	Gate (G)	Logic-level control input; requires -10 V or -4.5 V for full enhancement; gate resistance 4.5–9 Ω limits ringing
1, 2, 3	Source (S)	Power return path; pins 1–3 form low-inductance source connection for body-diode conduction and current sensing

Key Features

Feature	Design Value
100% UIS tested	Guarantees 54 mJ single-pulse avalanche energy handling without degradation in real-world load-dump events
Low R_DS(ON) at -4.5 V	< 18.5 mΩ enables direct compatibility with 5 V microcontroller GPIOs without level-shifting circuitry
Advanced trench process	Delivers 20% lower gate charge vs. prior-generation P-channel MOSFETs, reducing switching losses by ~15%
Body-diode optimized	Q_rr = 20 nC and t_rr = 13.3 ns support efficient reverse-current commutation in battery protection IC co-designs
Thermal-enhanced SO-8	Exposed drain pad improves heat transfer to PCB ground plane, enabling 3.1 W continuous operation at 70°C ambient

Applications

Notebook AC-In Load Switch	Battery Protection Circuit
Use Scenario: Power path management between AC adapter and system rail during hot-plug events in ultrabooks. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main system power entry with reverse-current blocking. Use Value: R_DS(ON) < 11.5 mΩ limits voltage drop to < 160 mV at 14 A, preserving system efficiency and thermal margin.	Use Scenario: Bidirectional current control in Li-ion battery packs for overcharge/overdischarge protection. IC Role / Device Role / Timing Role: Charge/discharge FET in protection IC-based BMS, operating in both forward and reverse conduction modes. Use Value: Optimized body-diode recovery (t_rr = 13.3 ns) minimizes cross-conduction loss during state transitions in dual-FET configurations.
USB-C Power Delivery Input	Industrial 24 V DC Power Rail
Use Scenario: Input power switch for USB-C PD sink devices requiring 20 V input tolerance and fast fault response. IC Role / Device Role / Timing Role: Primary input isolation switch activated by PD controller during VBUS presence detection. Use Value: -30 V V_DS rating provides 10 V margin above 20 V PD max, while 100% UIS testing ensures survival during cable hot-swap transients.	Use Scenario: Redundant power OR-ing in programmable logic controllers with dual 24 V supplies. IC Role / Device Role / Timing Role: Back-to-back P-channel switch implementing ideal diode functionality with external driver. Use Value: Low gate charge (Q_g = 35–50 nC) allows fast turn-on (< 50 ns) for seamless supply switchover with < 100 µs interruption.

Notebook AC-In Load Switch

Battery Protection Circuit

Use Scenario: Power path management between AC adapter and system rail during hot-plug events in ultrabooks.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main system power entry with reverse-current blocking.

Use Value: R_DS(ON) < 11.5 mΩ limits voltage drop to < 160 mV at 14 A, preserving system efficiency and thermal margin.

Use Scenario: Bidirectional current control in Li-ion battery packs for overcharge/overdischarge protection.

IC Role / Device Role / Timing Role: Charge/discharge FET in protection IC-based BMS, operating in both forward and reverse conduction modes.

Use Value: Optimized body-diode recovery (t_rr = 13.3 ns) minimizes cross-conduction loss during state transitions in dual-FET configurations.

USB-C Power Delivery Input

Industrial 24 V DC Power Rail

Use Scenario: Input power switch for USB-C PD sink devices requiring 20 V input tolerance and fast fault response.

IC Role / Device Role / Timing Role: Primary input isolation switch activated by PD controller during VBUS presence detection.

Use Value: -30 V V_DS rating provides 10 V margin above 20 V PD max, while 100% UIS testing ensures survival during cable hot-swap transients.

Use Scenario: Redundant power OR-ing in programmable logic controllers with dual 24 V supplies.

IC Role / Device Role / Timing Role: Back-to-back P-channel switch implementing ideal diode functionality with external driver.

Use Value: Low gate charge (Q_g = 35–50 nC) allows fast turn-on (< 50 ns) for seamless supply switchover with < 100 µs interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	V_DS = -20 V, R_DS(ON) = 115 mΩ @ -4.5 V, SOT-23 package, lower current (I_D = -2.7 A)	Not suitable for 14 A load switching; limited to low-power peripheral rails	Select only for space-constrained, sub-3 A applications where SO-8 footprint is prohibitive
DMG1012T	V_DS = -20 V, R_DS(ON) = 32 mΩ @ -4.5 V, SOT-23, I_D = -4.5 A, no UIS rating	Lacks avalanche ruggedness and thermal capacity for notebook AC-in use	Acceptable only in non-critical, low-energy 5 V systems without inductive loads

Compared with Si2301DDS and DMG1012T, the AOSP21307 delivers 5× higher current, 3× lower R_DS(ON), full -30 V rating, and certified UIS performance-making it uniquely suited for high-reliability, high-current P-channel switching where thermal and transient robustness are mandatory.

Availability

AOSP21307 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and USB-C PD input power management requiring stable component supply across production lifecycles.

Supply support for AOSP21307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AOSP21307 belongs to AOS's advanced trench P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching in portable and battery-powered systems demanding ruggedness and compact thermal design.

FAQ

What is the maximum continuous drain current for AOSP21307 at 70°C ambient temperature?

The AOSP21307 supports -14 A continuous drain current at T_A = 70°C when mounted on a 1-in² FR-4 board with 2 oz copper, based on its R_θJA = 75°C/W and T_J(MAX) = 150°C. Derating is not required below this condition per the datasheet's steady-state PD curve.

Does AOSP21307 require a gate driver for operation with 3.3 V logic?

No - the AOSP21307 has a gate threshold voltage range of -1.3 V to -2.3 V and achieves R_DS(ON) < 18.5 mΩ at V_GS = -4.5 V, making it fully compatible with standard 5 V or 3.3 V microcontroller outputs without external level shifting or gate drivers.

Is AOSP21307 rated for avalanche energy, and what is the test condition?

Yes - the AOSP21307 is 100% unclamped inductive switching (UIS) tested. Its rated single-pulse avalanche energy is 54 mJ at T_J = 125°C with L = 0.1 mH, verified per JEDEC JESD24-11 standards using the test circuit shown on page 5 of the datasheet.

What is the thermal resistance from junction to ambient (R_θJA) for AOSP21307, and how is it measured?

The AOSP21307 has R_θJA = 75°C/W, measured on a 1-in² FR-4 board with 2 oz copper in still air at T_A = 25°C. This value assumes the exposed drain pad is soldered to a large copper pour; actual board layout will affect real-world thermal performance.

Can AOSP21307 be used in back-to-back configuration for bidirectional blocking in battery protection?

Yes - the AOSP21307's symmetric SO-8 pinout, low R_DS(ON), and optimized body-diode characteristics (V_SD = -0.7 to -1.0 V, t_rr = 13.3 ns) make it suitable for back-to-back P-channel configurations in battery protection IC designs requiring true bidirectional current blocking and fast reverse recovery.

AOSP21307 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1995 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AOSP21307 FAQ

1.How can I place an order for AOSP21307 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOSP21307 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOSP21307 reliable?

The price and inventory of AOSP21307 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOSP21307 is usually 5 days.

3.What payment methods are accepted for AOSP21307?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOSP21307 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOSP21307?

AOSP21307 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOSP21307 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOSP21307?

For technical support, including AOSP21307 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOSP21307 requirements.

6.How does Aetrix verify that AOSP21307 is sourced from the original manufacturer or authorized distributors?

All AOSP21307 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOSP21307 meets industry standards.

7.What is the process for return or replacement of AOSP21307?

All AOSP21307 units undergo pre-shipment inspection (PSI). If there is an issue with AOSP21307, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOSP21307 part is unused and in its original packaging.

Return procedure for AOSP21307:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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