Alpha & Omega Semiconductor Inc. AOSP21311C
- Part No.:
- AOSP21311C
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AOSP21311C.pdf
- Description:
- MOSFET P-CH 30V 6A 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:3,021
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AOSP21311C from Alpha & Omega Semiconductor is a -30V, 6.5A P-channel MOSFET in SO-8 package with RDS(ON) < 42 mΩ at VGS = -10V and < 64 mΩ at VGS = -4.5V, rated for notebook AC-in load switching and battery protection charge/discharge circuits.
For engineers reviewing the AOSP21311C datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed UIS testing, HBM Class 1C ESD rating, gate threshold voltage range (-1.2 to -2.2 V), thermal resistance (RθJA = 85°C/W), and body-diode reverse recovery performance (Qrr = 13 nC).
Technical Context
This P-channel MOSFET uses advanced trench technology to achieve low on-resistance and high current capability in a standard SOIC-8 footprint. It supports unclamped inductive switching (100% UIS tested) and includes integrated body diode with characterized reverse recovery (trr = 10 ns, Qrr = 13 nC) for synchronous rectification and bidirectional power path control.
The device operates across -55°C to +150°C junction temperature range, with gate threshold voltage tightly specified (-1.2 to -2.2 V) and gate resistance measured at 15–25 Ω. Its dynamic parameters-including Qg(10V) = 12.5–23 nC and Ciss = 720 pF-are optimized for fast, efficient switching in DC-DC and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for reliable operation in 24V rail and battery protection systems |
| ID (TA=25°C) | -6.5 A - Continuous drain current rating enabling high-side load switching without derating at room temperature |
| RDS(ON) @ VGS=-10V | < 42 mΩ - Low conduction loss supporting <1.7 W power dissipation at full current in SO-8 package |
| RDS(ON) @ VGS=-4.5V | < 64 mΩ - Ensures robust turn-on under logic-level gate drive from 5V or 4.5V controllers |
| Qg(10V) | 12.5–23 nC - Gate charge range defining drive strength requirements for <40 ns total switching time |
| EAS | 8 mJ - Avalanche energy rating confirming ruggedness in inductive load transients without external snubbers |
| RθJA | 85 °C/W - Thermal resistance measured on 1-in² FR-4 board, defining maximum ambient temperature for continuous 6.5A operation |
Pinout & Package
Package: SOIC-8 (SO-8), surface-mount, standard JEDEC outline with exposed drain pad (pins 1–4 and 5–8 are source/drain terminals respectively; pin 3 is gate; pin 1 is source; pin 8 is drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for P-channel topology; electrically tied to PCB ground plane in high-side switch configuration |
| 5, 6, 7, 8 | Drain (D) | Main power output node; pins 5–8 internally connected to maximize current handling and thermal conduction to PCB copper |
| 3 | Gate (G) | Control input requiring negative VGS; isolated from drain/source by oxide layer; sensitive to ESD (HBM Class 1C) |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS Tested | Guarantees avalanche ruggedness up to 8 mJ per pulse-eliminates need for external clamping in load-dump or motor-drive scenarios |
| Low RDS(ON) at -4.5V | Enables direct interface with 5V/4.5V microcontroller GPIOs without level-shifting circuitry |
| HBM Class 1C ESD Protection | Withstands ≥1000 V human-body-model discharge-reduces risk of field failure during assembly and handling |
| Body Diode Optimized | Qrr = 13 nC and trr = 10 ns support efficient reverse recovery in synchronous buck or OR-ing applications |
Applications
| Notebook AC-in Load Switch | Battery Protection Charge/Discharge |
|---|---|
Use Scenario: Controls AC adapter input path in ultrabook platforms, enabling seamless switchover between AC and battery sources. IC Role / Device Role / Timing Role: High-side P-channel load switch managing power routing and inrush limiting. Use Value: RDS(ON) < 42 mΩ minimizes voltage drop and heat generation during sustained 6.5A AC-in operation. | Use Scenario: Implements overcurrent and short-circuit protection in Li-ion battery packs for portable medical devices. IC Role / Device Role / Timing Role: Bidirectional current-blocking element in charge/discharge FET pair. Use Value: 100% UIS testing ensures survivability during fault-induced inductive kickback from battery protection ICs. |
| Industrial 24V Power Distribution | USB-C PD Source Switching |
Use Scenario: Provides hot-swap capability in programmable logic controller (PLC) I/O modules with 24V supply rails. IC Role / Device Role / Timing Role: Controlled power enable switch with fast turn-off (<50 ns) to limit fault propagation. Use Value: Gate charge (Qg = 12.5–23 nC) allows clean switching using standard 1A gate drivers without overshoot. | Use Scenario: Serves as VCONN or VBUS switch in USB-C power delivery source ports compliant with USB PD 3.0. IC Role / Device Role / Timing Role: Logic-level controllable high-side switch for 20V-rated power path management. Use Value: RDS(ON) < 64 mΩ at VGS = -4.5V ensures <300 mW conduction loss at 2A USB-C load current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS | RDS(ON) = 90 mΩ @ -4.5V; lower ID (−2.7A); SOT-23 package | Lower current capacity limits use to sub-3A loads; smaller footprint reduces thermal mass | Select when space-constrained and peak current ≤2.7A; not suitable for 6.5A AOSP21311C applications |
| DMG1012UW-7 | RDS(ON) = 55 mΩ @ -4.5V; ID = −3.8A; SOT-363 package | Higher RDS(ON) and lower current rating reduce efficiency in high-load scenarios | Prefer for dual-FET configurations where footprint and integration outweigh single-device performance needs |
Compared with Si2301DDS and DMG1012UW-7, the AOSP21311C delivers higher current capability (-6.5A), lower on-resistance (<42 mΩ at -10V), and SO-8 thermal robustness-making it optimal for sustained high-power load switching where thermal management and avalanche reliability are critical.
Availability
AOSP21311C is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and industrial 24V power distribution requiring stable component supply and long-term lifecycle support.
Supply support for AOSP21311C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AOSP21311C belongs to AOS's TrenchMOS™ P-channel portfolio, engineered for high-current, low-RDS(ON) load switching in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current for AOSP21311C at 70°C ambient temperature?
The AOSP21311C supports -4.7 A continuous drain current at TA = 70°C, derated from its -6.5 A rating at 25°C due to thermal limitations defined by RθJA = 85°C/W. This value assumes standard SO-8 mounting on 1-in² FR-4 with 2 oz copper. Actual current capability depends on PCB layout and airflow; the AOSP21311C datasheet provides SOA curves for precise design margining.
Does AOSP21311C require a gate driver for microcontroller-level control?
No, the AOSP21311C does not require an external gate driver when driven by 4.5V or 5V logic outputs, as its gate threshold voltage ranges from -1.2 V to -2.2 V and RDS(ON) remains < 64 mΩ at VGS = -4.5V. However, for sub-100 ns switching or high-frequency PWM, a dedicated gate driver improves rise/fall times and reduces switching losses in the AOSP21311C.
Is AOSP21311C RoHS and halogen-free compliant?
Yes, the AOSP21311C is RoHS-compliant and halogen-free per manufacturer specification. This compliance is explicitly stated in the product summary and applies to all shipped units. The AOSP21311C meets JEDEC J-STD-609 Category 1 for halogen content and satisfies EU RoHS Directive 2011/65/EU Annex II substance restrictions.
What is the significance of 100% UIS testing for AOSP21311C?
100% UIS (Unclamped Inductive Switching) testing certifies that every AOSP21311C unit can safely absorb 8 mJ of avalanche energy without degradation. This ensures robustness against inductive kickback in applications like motor drives or relay coils-eliminating reliance on external TVS diodes or snubbers and improving system-level reliability of the AOSP21311C in real-world transient conditions.
Can AOSP21311C be used in parallel configurations for higher current handling?
Yes, the AOSP21311C supports paralleling due to its negative temperature coefficient of RDS(ON), which promotes current sharing as junction temperature rises. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; the AOSP21311C's gate resistance (15–25 Ω) and tight VGS(th) tolerance (-1.2 to -2.2 V) further enhance balance across parallel AOSP21311C devices.
AOSP21311C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 720 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AOSP21311C FAQ
1.How can I place an order for AOSP21311C through Aetrix?
Please submit a Request for Quotation (RFQ) for AOSP21311C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOSP21311C reliable?
The price and inventory of AOSP21311C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOSP21311C is usually 5 days.
3.What payment methods are accepted for AOSP21311C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOSP21311C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOSP21311C?
AOSP21311C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOSP21311C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOSP21311C?
For technical support, including AOSP21311C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOSP21311C requirements.
6.How does Aetrix verify that AOSP21311C is sourced from the original manufacturer or authorized distributors?
All AOSP21311C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOSP21311C meets industry standards.
7.What is the process for return or replacement of AOSP21311C?
All AOSP21311C units undergo pre-shipment inspection (PSI). If there is an issue with AOSP21311C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOSP21311C part is unused and in its original packaging.
Return procedure for AOSP21311C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AOSP21311C Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

