Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AOSP21311C

Part No.:
AOSP21311C
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAOSP21311C.pdf
Description:
MOSFET P-CH 30V 6A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,021

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AOSP21311C from Alpha & Omega Semiconductor is a -30V, 6.5A P-channel MOSFET in SO-8 package with RDS(ON) < 42 mΩ at VGS = -10V and < 64 mΩ at VGS = -4.5V, rated for notebook AC-in load switching and battery protection charge/discharge circuits.

For engineers reviewing the AOSP21311C datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed UIS testing, HBM Class 1C ESD rating, gate threshold voltage range (-1.2 to -2.2 V), thermal resistance (RθJA = 85°C/W), and body-diode reverse recovery performance (Qrr = 13 nC).

Technical Context

This P-channel MOSFET uses advanced trench technology to achieve low on-resistance and high current capability in a standard SOIC-8 footprint. It supports unclamped inductive switching (100% UIS tested) and includes integrated body diode with characterized reverse recovery (trr = 10 ns, Qrr = 13 nC) for synchronous rectification and bidirectional power path control.

The device operates across -55°C to +150°C junction temperature range, with gate threshold voltage tightly specified (-1.2 to -2.2 V) and gate resistance measured at 15–25 Ω. Its dynamic parameters-including Qg(10V) = 12.5–23 nC and Ciss = 720 pF-are optimized for fast, efficient switching in DC-DC and load-switching topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum drain-source blocking voltage for reliable operation in 24V rail and battery protection systems
ID (TA=25°C)-6.5 A - Continuous drain current rating enabling high-side load switching without derating at room temperature
RDS(ON) @ VGS=-10V< 42 mΩ - Low conduction loss supporting <1.7 W power dissipation at full current in SO-8 package
RDS(ON) @ VGS=-4.5V< 64 mΩ - Ensures robust turn-on under logic-level gate drive from 5V or 4.5V controllers
Qg(10V)12.5–23 nC - Gate charge range defining drive strength requirements for <40 ns total switching time
EAS8 mJ - Avalanche energy rating confirming ruggedness in inductive load transients without external snubbers
RθJA85 °C/W - Thermal resistance measured on 1-in² FR-4 board, defining maximum ambient temperature for continuous 6.5A operation

Pinout & Package

Package: SOIC-8 (SO-8), surface-mount, standard JEDEC outline with exposed drain pad (pins 1–4 and 5–8 are source/drain terminals respectively; pin 3 is gate; pin 1 is source; pin 8 is drain).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source (S)Common source connection for P-channel topology; electrically tied to PCB ground plane in high-side switch configuration
5, 6, 7, 8Drain (D)Main power output node; pins 5–8 internally connected to maximize current handling and thermal conduction to PCB copper
3Gate (G)Control input requiring negative VGS; isolated from drain/source by oxide layer; sensitive to ESD (HBM Class 1C)

Key Features

FeatureDesign Value
100% UIS TestedGuarantees avalanche ruggedness up to 8 mJ per pulse-eliminates need for external clamping in load-dump or motor-drive scenarios
Low RDS(ON) at -4.5VEnables direct interface with 5V/4.5V microcontroller GPIOs without level-shifting circuitry
HBM Class 1C ESD ProtectionWithstands ≥1000 V human-body-model discharge-reduces risk of field failure during assembly and handling
Body Diode OptimizedQrr = 13 nC and trr = 10 ns support efficient reverse recovery in synchronous buck or OR-ing applications

Applications

Notebook AC-in Load SwitchBattery Protection Charge/Discharge

Use Scenario: Controls AC adapter input path in ultrabook platforms, enabling seamless switchover between AC and battery sources.

IC Role / Device Role / Timing Role: High-side P-channel load switch managing power routing and inrush limiting.

Use Value: RDS(ON) < 42 mΩ minimizes voltage drop and heat generation during sustained 6.5A AC-in operation.

Use Scenario: Implements overcurrent and short-circuit protection in Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Bidirectional current-blocking element in charge/discharge FET pair.

Use Value: 100% UIS testing ensures survivability during fault-induced inductive kickback from battery protection ICs.

Industrial 24V Power DistributionUSB-C PD Source Switching

Use Scenario: Provides hot-swap capability in programmable logic controller (PLC) I/O modules with 24V supply rails.

IC Role / Device Role / Timing Role: Controlled power enable switch with fast turn-off (<50 ns) to limit fault propagation.

Use Value: Gate charge (Qg = 12.5–23 nC) allows clean switching using standard 1A gate drivers without overshoot.

Use Scenario: Serves as VCONN or VBUS switch in USB-C power delivery source ports compliant with USB PD 3.0.

IC Role / Device Role / Timing Role: Logic-level controllable high-side switch for 20V-rated power path management.

Use Value: RDS(ON) < 64 mΩ at VGS = -4.5V ensures <300 mW conduction loss at 2A USB-C load current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si2301DDSRDS(ON) = 90 mΩ @ -4.5V; lower ID (−2.7A); SOT-23 packageLower current capacity limits use to sub-3A loads; smaller footprint reduces thermal massSelect when space-constrained and peak current ≤2.7A; not suitable for 6.5A AOSP21311C applications
DMG1012UW-7RDS(ON) = 55 mΩ @ -4.5V; ID = −3.8A; SOT-363 packageHigher RDS(ON) and lower current rating reduce efficiency in high-load scenariosPrefer for dual-FET configurations where footprint and integration outweigh single-device performance needs

Compared with Si2301DDS and DMG1012UW-7, the AOSP21311C delivers higher current capability (-6.5A), lower on-resistance (<42 mΩ at -10V), and SO-8 thermal robustness-making it optimal for sustained high-power load switching where thermal management and avalanche reliability are critical.

Availability

AOSP21311C is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and industrial 24V power distribution requiring stable component supply and long-term lifecycle support.

Supply support for AOSP21311C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AOSP21311C belongs to AOS's TrenchMOS™ P-channel portfolio, engineered for high-current, low-RDS(ON) load switching in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for AOSP21311C at 70°C ambient temperature?

The AOSP21311C supports -4.7 A continuous drain current at TA = 70°C, derated from its -6.5 A rating at 25°C due to thermal limitations defined by RθJA = 85°C/W. This value assumes standard SO-8 mounting on 1-in² FR-4 with 2 oz copper. Actual current capability depends on PCB layout and airflow; the AOSP21311C datasheet provides SOA curves for precise design margining.

Does AOSP21311C require a gate driver for microcontroller-level control?

No, the AOSP21311C does not require an external gate driver when driven by 4.5V or 5V logic outputs, as its gate threshold voltage ranges from -1.2 V to -2.2 V and RDS(ON) remains < 64 mΩ at VGS = -4.5V. However, for sub-100 ns switching or high-frequency PWM, a dedicated gate driver improves rise/fall times and reduces switching losses in the AOSP21311C.

Is AOSP21311C RoHS and halogen-free compliant?

Yes, the AOSP21311C is RoHS-compliant and halogen-free per manufacturer specification. This compliance is explicitly stated in the product summary and applies to all shipped units. The AOSP21311C meets JEDEC J-STD-609 Category 1 for halogen content and satisfies EU RoHS Directive 2011/65/EU Annex II substance restrictions.

What is the significance of 100% UIS testing for AOSP21311C?

100% UIS (Unclamped Inductive Switching) testing certifies that every AOSP21311C unit can safely absorb 8 mJ of avalanche energy without degradation. This ensures robustness against inductive kickback in applications like motor drives or relay coils-eliminating reliance on external TVS diodes or snubbers and improving system-level reliability of the AOSP21311C in real-world transient conditions.

Can AOSP21311C be used in parallel configurations for higher current handling?

Yes, the AOSP21311C supports paralleling due to its negative temperature coefficient of RDS(ON), which promotes current sharing as junction temperature rises. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; the AOSP21311C's gate resistance (15–25 Ω) and tight VGS(th) tolerance (-1.2 to -2.2 V) further enhance balance across parallel AOSP21311C devices.

AOSP21311C Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
720 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AOSP21311C FAQ

1.How can I place an order for AOSP21311C through Aetrix?

Please submit a Request for Quotation (RFQ) for AOSP21311C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOSP21311C reliable?

The price and inventory of AOSP21311C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOSP21311C is usually 5 days.

3.What payment methods are accepted for AOSP21311C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOSP21311C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOSP21311C?

AOSP21311C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOSP21311C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOSP21311C?

For technical support, including AOSP21311C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOSP21311C requirements.

6.How does Aetrix verify that AOSP21311C is sourced from the original manufacturer or authorized distributors?

All AOSP21311C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOSP21311C meets industry standards.

7.What is the process for return or replacement of AOSP21311C?

All AOSP21311C units undergo pre-shipment inspection (PSI). If there is an issue with AOSP21311C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOSP21311C part is unused and in its original packaging.

Return procedure for AOSP21311C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AOSP21311C Tags

  • AOSP21311C
  • AOSP21311C PDF
  • AOSP21311C Datasheet
  • AOSP21311C Specifications
  • AOSP21311C Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AOSP21311C
  • Buy AOSP21311C
  • AOSP21311C Price
  • AOSP21311C Distributor
  • AOSP21311C Supplier
  • AOSP21311C Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER