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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOTF266L

Name: AOTF266L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOTF266L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOTF266L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: AOTF266L.pdf

Description:: MOSFET N-CH 60V 18A/78A TO220-3F

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Product details

Overview

AOTF266L from Alpha & Omega Semiconductor is a 60V N-Channel Trench MOSFET in TO-220F package, rated for 78A continuous drain current at V_GS=10V, with R_DS(ON) < 3.5 mΩ and 100% UIS tested - optimized for high-frequency switching in synchronous rectifiers and boost converters for industrial power supplies.

For engineers reviewing the AOTF266L datasheet, pinout, applications, or equivalent options, key selection criteria include its 3.3°C/W junction-to-case thermal resistance, 720 pF C_oss, 65–90 nC total gate charge, and TO-220F insulated package suitability for thermally constrained board-level designs.

Technical Context

The AOTF266L employs Trench MOSFET technology to minimize both conduction loss (via ultra-low R_DS(ON)) and switching loss (via low C_iss = 5650 pF and C_oss = 720 pF). Its gate threshold voltage (2.2–3.2 V) and transconductance (80 S) support robust drive compatibility with standard 5V/10V logic-level controllers.

Thermal performance is defined by R_θJC = 3.3°C/W and R_θJA = 60°C/W (1 in² FR-4, 2 oz Cu), with safe operating area limited by R_DS(ON) at DC and pulse widths ≥100 ms. It is 100% tested for unclamped inductive switching (UIS) and gate resistance (R_g = 0.4–1.4 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48V input systems and 24V industrial rails.
I_D (V_GS=10V)	78 A - Continuous current rating at case temperature ≤100°C, defining usable output power in high-current DC-DC stages.
R_DS(ON) (V_GS=10V)	< 3.5 mΩ - Enables sub-0.3 W conduction loss at 50 A, critical for efficiency in 100W+ synchronous rectifiers.
C_oss	720 pF - Low output capacitance reduces turn-off energy and improves light-load efficiency in hard-switched topologies.
Q_g (10V)	65–90 nC - Gate charge range informs driver strength requirement; 90 nC demands ≥2 A peak gate drive for <100 ns switching transitions.
R_θJC	3.3°C/W - Junction-to-case thermal resistance enables direct heatsink mounting without thermal interface material degradation concerns.
E_AS	450 mJ - Avalanche energy rating supports robustness in inductive load switching without external snubbers.

Pinout & Package

Package: TO-220F (full-pack insulated case, non-conductive mounting surface). Thermal pad electrically isolated from drain; requires no insulating washer when mounted to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V drive; 0.4–1.4 Ω internal gate resistance limits ringing and EMI.
D	Drain	Main high-side switching node; connected to thermal pad on underside of TO-220F package; electrically isolated from case.
S	Source	Power return path and reference for gate drive; ties to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse avalanche capability up to 450 mJ, eliminating need for external clamping in boost PFC stages.
Trench MOSFET architecture	Delivers simultaneous low R_DS(ON) and low C_iss/C_oss, enabling >95% efficiency in 100–500 kHz synchronous rectifiers.
TO-220F insulated package	Enables direct bolt-down heatsinking without isolation hardware, reducing thermal stack-up and assembly cost.
Body diode Q_rr = 145 nC	Low reverse recovery charge minimizes cross-conduction loss and EMI in synchronous buck/boost configurations.
100% R_g tested	Ensures consistent gate drive timing and predictable switching behavior across production lots.

Applications

Industrial AC-DC Power Supplies	Telecom DC-DC Brick Converters
Use Scenario: Primary-side switch in 600W active clamp forward or LLC resonant converter operating at 200–350 kHz. IC Role / Device Role / Timing Role: High-side main switch handling full input voltage and current; synchronized to controller's gate drive signal. Use Value: 3.5 mΩ R_DS(ON) and 720 pF C_oss reduce combined conduction + switching losses below 4.2 W at 600W output, improving thermal margin.	Use Scenario: Secondary-side synchronous rectifier in 48V input, 12V/50A isolated DC-DC module. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled or IC-based gate driver. Use Value: 145 nC Q_rr and 0.65–1.0 V V_SD minimize body diode conduction loss during dead-time, increasing efficiency by 1.3% over Schottky solutions.
LED Backlighting Boost Drivers	Server VRM High-Current Phases
Use Scenario: Main switch in multi-string LED boost converter driving 100+ LEDs at 120V output from 12V input. IC Role / Device Role / Timing Role: Fast-switching power FET controlled by PWM dimming IC with 500 kHz switching frequency. Use Value: 65–90 nC Q_g allows clean 500 kHz operation with 2 A gate driver; low C_oss prevents excessive voltage overshoot at turn-off.	Use Scenario: High-side FET in 4-phase 12V→0.8V VRM supplying CPU core power up to 300 A. IC Role / Device Role / Timing Role: Phase-leg high-side switch operated in interleaved 500–1000 kHz PWM with integrated driver. Use Value: TO-220F insulation and 3.3°C/W R_θJC allow direct heatsink attachment per phase, maintaining <105°C junction temp under 75 A/phase load.

Industrial AC-DC Power Supplies

Telecom DC-DC Brick Converters

Use Scenario: Primary-side switch in 600W active clamp forward or LLC resonant converter operating at 200–350 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling full input voltage and current; synchronized to controller's gate drive signal.

Use Value: 3.5 mΩ R_DS(ON) and 720 pF C_oss reduce combined conduction + switching losses below 4.2 W at 600W output, improving thermal margin.

Use Scenario: Secondary-side synchronous rectifier in 48V input, 12V/50A isolated DC-DC module.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled or IC-based gate driver.

Use Value: 145 nC Q_rr and 0.65–1.0 V V_SD minimize body diode conduction loss during dead-time, increasing efficiency by 1.3% over Schottky solutions.

LED Backlighting Boost Drivers

Server VRM High-Current Phases

Use Scenario: Main switch in multi-string LED boost converter driving 100+ LEDs at 120V output from 12V input.

IC Role / Device Role / Timing Role: Fast-switching power FET controlled by PWM dimming IC with 500 kHz switching frequency.

Use Value: 65–90 nC Q_g allows clean 500 kHz operation with 2 A gate driver; low C_oss prevents excessive voltage overshoot at turn-off.

Use Scenario: High-side FET in 4-phase 12V→0.8V VRM supplying CPU core power up to 300 A.

IC Role / Device Role / Timing Role: Phase-leg high-side switch operated in interleaved 500–1000 kHz PWM with integrated driver.

Use Value: TO-220F insulation and 3.3°C/W R_θJC allow direct heatsink attachment per phase, maintaining <105°C junction temp under 75 A/phase load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP78N60DM6	R_DS(ON) = 4.2 mΩ (V_GS=10V); TO-220 package (non-insulated); R_θJC = 1.2°C/W but requires insulator kit.	Higher conduction loss; needs additional isolation hardware; better suited for lower-frequency, higher-heat-sinked designs.	Select if board layout already includes insulating hardware and thermal design targets <1.5°C/W system R_θJA.
IXTH75N60L2	R_DS(ON) = 3.8 mΩ; TO-247 package; R_θJC = 0.45°C/W; higher Q_g = 120 nC; no UIS rating specified.	Superior thermal performance but larger footprint and higher gate drive demand; lacks avalanche ruggedness validation.	Select for ultra-high-power (>1 kW), forced-air-cooled systems where gate drive capability and heatsink mass offset size penalty.

Compared with STP78N60DM6 and IXTH75N60L2, the AOTF266L provides best-in-class balance of low R_DS(ON), verified UIS robustness, and TO-220F insulation - making it optimal for space-constrained, medium-power industrial and telecom power stages requiring zero added isolation hardware.

Availability

AOTF266L is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom DC-DC brick converters, and LED backlighting boost drivers requiring stable component supply and long-term lifecycle support.

Supply support for AOTF266L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.

The AOTF266L belongs to AOS's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current switching in compact power conversion systems where thermal management and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current rating for AOTF266L at 100°C case temperature?

The AOTF266L is rated for 78 A continuous drain current at V_GS = 10 V and T_C = 100°C. This value is confirmed in the Absolute Maximum Ratings table and reflects derating from the 140 A rating at T_C = 25°C due to thermal constraints. The AOTF266L datasheet specifies this 78 A limit as the steady-state current under real-world heatsink conditions.

Does AOTF266L have an insulated package, and how does that affect mounting?

Yes, the AOTF266L uses a TO-220F package with full electrical insulation between the drain-connected thermal pad and the mounting surface. This eliminates the need for mica washers or silicone pads when attaching directly to a heatsink, simplifying assembly and improving thermal reliability. The AOTF266L's R_θJC = 3.3°C/W is measured under this insulated condition.

Is AOTF266L suitable for synchronous rectification in a 48V-to-12V DC-DC converter?

Yes, the AOTF266L is explicitly recommended for synchronous rectifiers in telecom and industrial power supplies. Its 145 nC Q_rr, 0.65–1.0 V V_SD, and 3.5 mΩ R_DS(ON) enable high efficiency at 48V input, especially in 200–500 kHz designs. The AOTF266L's low C_oss also reduces turn-off loss during high-side switching transitions.

What is the gate threshold voltage range for AOTF266L, and how does it impact drive compatibility?

The AOTF266L has a gate threshold voltage (V_GS(th)) range of 2.2–3.2 V at T_J = 25°C, extending to 2.9–3.5 V at 125°C. This ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with most PWM controllers. The AOTF266L's 80 S transconductance further supports stable operation across temperature and load variations.

How is avalanche ruggedness validated for AOTF266L, and what is its rated EAS?

The AOTF266L is 100% tested for unclamped inductive switching (UIS) per JEDEC standards. Its rated single-pulse avalanche energy (E_AS) is 450 mJ at T_J = 25°C, verified using standardized test circuits with L = 0.1 mH. This E_AS rating is published in the AOTF266L datasheet and applies directly to the TO-220F variant.

AOTF266L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5650 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 45.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

AOTF266L FAQ

1.How can I place an order for AOTF266L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF266L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF266L reliable?

The price and inventory of AOTF266L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF266L is usually 5 days.

3.What payment methods are accepted for AOTF266L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF266L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF266L?

AOTF266L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF266L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF266L?

For technical support, including AOTF266L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF266L requirements.

6.How does Aetrix verify that AOTF266L is sourced from the original manufacturer or authorized distributors?

All AOTF266L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF266L meets industry standards.

7.What is the process for return or replacement of AOTF266L?

All AOTF266L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF266L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF266L part is unused and in its original packaging.

Return procedure for AOTF266L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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