Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOTF2916L

Name: AOTF2916L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOTF2916L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AOTF2916L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: AOTF2916L.pdf

Description:: MOSFET N-CH 100V 5A/17A TO220-3F

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,633

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AOTF2916L from Alpha & Omega Semiconductor is a 100V N-Channel Trench MOSFET in TO-220F package, rated for 17A continuous drain current at V_GS=10V, with R_DS(ON) < 34 mΩ and 100% UIS tested. It serves as a high-frequency switching device in synchronous rectifiers and boost converters for telecom and industrial power supplies.

For engineers reviewing the AOTF2916L datasheet, pinout, applications, or equivalent options, key selection criteria include its 6.4°C/W junction-to-case thermal resistance, 100% R_g tested gate resistance, and optimized C_iss/C_oss ratio for minimizing conduction and switching losses in hard-switched topologies.

Technical Context

The AOTF2916L employs trench-gate MOSFET technology to achieve low R_DS(ON) (34 mΩ max @ 10V) and low gate charge (Q_g(10V) = 12.5–20 nC), enabling high-efficiency operation above 100 kHz. Its body diode exhibits t_rr = 20 ns and Q_rr = 88 nC under IF = 10 A, dI/dt = 500 A/μs conditions.

Thermal design is supported by validated junction-to-case resistance of 6.4°C/W and SOA curves up to 10 ms pulse width at T_C = 25°C. The device is rated for T_J = –55°C to 175°C and features 100% unclamped inductive switching (UIS) and gate leakage (I_GSS ≤ ±100 nA) testing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage in hard-switched DC-DC stages
I_D (V_GS=10V)	17 A - Continuous current capability at case temperature ≤100°C
R_DS(ON) (V_GS=10V)	< 34 mΩ - Enables <1.5 W conduction loss at 17 A in boost PFC
Q_g(10V)	12.5–20 nC - Determines gate drive power and switching speed in 200–500 kHz designs
R_θJC	6.4°C/W - Defines heatsink interface requirement for 20.5 W steady-state dissipation
E_AS	50 mJ - Confirmed avalanche energy rating for robustness in inductive load switching
t_r/t_f	3.5 ns / 5.5 ns - Supports fast edge rates with minimal switching loss in synchronous rectification

Pinout & Package

Package: TO-220F (Full-pack, insulated tab, vertical mounting). Tab is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 10 V for full enhancement; R_g = 7 Ω typical
D	Drain	High-side switch node; electrically tied to insulated metal tab
S	Source	Power return path and reference for gate drive; common source configuration

Key Features

Feature	Design Value
Trench MOSFET architecture	Reduces R_DS(ON) × Q_g figure-of-merit to 0.67 Ω·nC for high-frequency efficiency
100% UIS tested	Guarantees single-pulse avalanche ruggedness up to 50 mJ without derating
100% R_g tested	Ensures consistent gate drive timing and eliminates outliers in parallel configurations
Optimized C_iss/C_oss ratio	870 pF / 68 pF enables soft switching behavior in ZVS resonant converters
Body diode with low Q_rr	88 nC reverse recovery charge minimizes commutation loss in synchronous rectifier mode

Applications

Telecom AC-DC Front-End	Industrial Boost PFC Stage
Use Scenario: High-density 3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier operating at 200–300 kHz with zero-voltage switching. Use Value: Low R_DS(ON) and fast t_r/t_f reduce conduction and switching losses by 18% vs. legacy 40 mΩ MOSFETs.	Use Scenario: 1.5 kW industrial power supply with continuous conduction mode (CCM) boost PFC. IC Role / Device Role / Timing Role: High-side boost switch handling 17 A peak inductor current at 100 kHz. Use Value: 6.4°C/W R_θJC allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.
LED Backlighting Inverter	Solar Microinverter DC-DC Stage
Use Scenario: 200 W LCD TV backlight driver using resonant half-bridge with LLC control. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in resonant output stage. Use Value: Low C_oss (68 pF) and 20 ns t_rr enable efficient operation at 500 kHz with minimal dead-time loss.	Use Scenario: 300 W solar microinverter with interleaved boost + H-bridge inverter. IC Role / Device Role / Timing Role: Interleaved boost switch operating at 120 kHz with 100% UIS margin. Use Value: 100% UIS-tested 50 mJ rating ensures reliability during grid fault transients without snubber circuits.

Telecom AC-DC Front-End

Industrial Boost PFC Stage

Use Scenario: High-density 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier operating at 200–300 kHz with zero-voltage switching.

Use Value: Low R_DS(ON) and fast t_r/t_f reduce conduction and switching losses by 18% vs. legacy 40 mΩ MOSFETs.

Use Scenario: 1.5 kW industrial power supply with continuous conduction mode (CCM) boost PFC.

IC Role / Device Role / Timing Role: High-side boost switch handling 17 A peak inductor current at 100 kHz.

Use Value: 6.4°C/W R_θJC allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.

LED Backlighting Inverter

Solar Microinverter DC-DC Stage

Use Scenario: 200 W LCD TV backlight driver using resonant half-bridge with LLC control.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in resonant output stage.

Use Value: Low C_oss (68 pF) and 20 ns t_rr enable efficient operation at 500 kHz with minimal dead-time loss.

Use Scenario: 300 W solar microinverter with interleaved boost + H-bridge inverter.

IC Role / Device Role / Timing Role: Interleaved boost switch operating at 120 kHz with 100% UIS margin.

Use Value: 100% UIS-tested 50 mJ rating ensures reliability during grid fault transients without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	R_DS(ON) = 75 mΩ @ 10V; TO-220 package; no UIS rating specified	Lower switching frequency suitability (≤60 kHz); higher conduction loss	Select when cost sensitivity outweighs efficiency and ruggedness requirements
IRF540N	R_DS(ON) = 44 mΩ @ 10V; C_iss = 1,200 pF; no 100% R_g test	Higher gate charge increases drive loss; less suitable for >150 kHz operation	Prefer where legacy design reuse and wide distributor availability are critical

Compared with STP16NF10 and IRF540N, the AOTF2916L delivers 2.2× lower R_DS(ON), 30% lower Q_g, and guaranteed UIS performance-making it optimal for high-frequency, high-reliability power conversion where thermal headroom and transient robustness are design constraints.

Availability

AOTF2916L is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, industrial boost PFC stages, and LED backlighting inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOTF2916L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and telecom markets.

The AOTF2916L belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion and synchronous rectification in space-constrained power systems.

FAQ

What is the maximum continuous drain current rating for AOTF2916L at 100°C case temperature?

The AOTF2916L supports 17 A continuous drain current at T_C = 100°C per its Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for R_DS(ON) increase with temperature, verified by the on-resistance vs. junction temperature curve (Figure 4) showing <1.4× nominal R_DS(ON) at 125°C.

Does AOTF2916L have an insulated package, and how does that affect mounting?

Yes, the AOTF2916L uses a TO-220F (full-pack) package with electrically insulated metal tab tied to the drain. This allows direct mounting to a grounded heatsink without requiring insulating hardware, simplifying thermal design while maintaining electrical isolation between drain and heatsink.

What is the gate threshold voltage range for AOTF2916L, and how does it impact drive circuit design?

The AOTF2916L has a gate threshold voltage (V_GS(th)) of 1.6–2.7 V at I_D = 250 μA. This low threshold enables reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers, but requires careful layout to avoid spurious turn-on due to noise coupling-especially given its 7 Ω typical gate resistance.

How is the avalanche capability of AOTF2916L validated, and what does "100% UIS tested" mean?

"100% UIS tested" means every AOTF2916L unit undergoes unclamped inductive switching stress at E_AS = 50 mJ (L = 0.1 mH, I_AS = 23 A) per JEDEC JESD22-A116. This validation ensures single-pulse avalanche robustness without parameter shift, critical for reliability in boost and flyback topologies with inductive energy storage.

Can AOTF2916L be used in parallel configurations, and what factory testing supports this?

Yes, AOTF2916L is suitable for paralleling due to its positive temperature coefficient of R_DS(ON) and 100% R_g testing-both confirmed in the datasheet. The R_g test ensures gate resistance variation is tightly controlled, promoting balanced dynamic current sharing during switching transitions.

AOTF2916L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta), 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 23.5W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

AOTF2916L FAQ

1.How can I place an order for AOTF2916L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF2916L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF2916L reliable?

The price and inventory of AOTF2916L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF2916L is usually 5 days.

3.What payment methods are accepted for AOTF2916L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF2916L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF2916L?

AOTF2916L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF2916L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF2916L?

For technical support, including AOTF2916L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF2916L requirements.

6.How does Aetrix verify that AOTF2916L is sourced from the original manufacturer or authorized distributors?

All AOTF2916L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF2916L meets industry standards.

7.What is the process for return or replacement of AOTF2916L?

All AOTF2916L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF2916L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF2916L part is unused and in its original packaging.

Return procedure for AOTF2916L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…