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Alpha & Omega Semiconductor Inc. AOTF66616L
- Part No.:
- AOTF66616L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
AOTF66616L.pdf
- Description:
- MOSFET N-CH 60V 38A/72.5A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:2,007
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Product details
Overview
AOTF66616L from Alpha & Omega Semiconductor is a 60V, 72.5A N-Channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-efficiency synchronous rectification in DC/DC and AC/DC converters. It delivers RDS(ON) < 3.3 mΩ at VGS = 10 V and < 4.7 mΩ at VGS = 6 V, with 100% UIS and Rg tested, supporting industrial motor drives requiring robust avalanche capability and low conduction loss.
For engineers reviewing the AOTF66616L datasheet, pinout, applications, or equivalent options, key selection criteria include its 60V VDS, 72.5A ID rating at TC = 25°C, 4.1°C/W RθJC, 100% avalanche energy validation (EAS = 184 mJ), and TO-220F package thermal performance in high-current switching nodes.
Technical Context
The AOTF66616L employs AlphaSGT™ (Shielded Gate Trench) architecture to minimize gate charge × RDS(ON) figure-of-merit (FOM), enabling fast switching with reduced Miller capacitance (Crss = 38 pF) and low Qgd = 10 nC. Its body diode exhibits trr = 26 ns and Qrr = 87 nC under IF = 20 A, di/dt = 500 A/ms conditions.
Thermally, it features a junction-to-case resistance of 4.1°C/W and supports continuous drain current up to 35 A at TA = 70°C. Absolute maximum ratings include VGS = ±20 V, TJ/TSTG = −55 to +150°C, and 100% production-tested unclamped inductive switching (UIS) with L = 0.3 mH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 48 V bus and industrial power rail applications |
| ID (VGS = 10 V) | 72.5 A - Continuous drain current at TC = 25°C, defining peak load-handling capacity in motor drive H-bridges |
| RDS(ON) (VGS = 10 V) | < 3.3 mΩ - Low conduction loss enabling <1.5 W dissipation at 40 A, critical for thermally constrained designs |
| Qg (10 V) | 42.5–60 nC - Total gate charge determining driver strength requirement and switching loss trade-off |
| EAS | 184 mJ - Validated single-pulse avalanche energy ensuring reliability during inductive turn-off transients |
| RθJC | 4.1 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting for high-power density layouts |
| Ciss | 2870 pF - Input capacitance influencing gate drive loop stability and EMI behavior in hard-switched topologies |
Pinout & Package
Package: TO-220F (Full-pack, insulated tab), thermally enhanced variant with isolated drain pad for direct heatsink mounting without insulator.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal for MOSFET turn-on/off; requires ≤ ±20 V drive and low-impedance path to manage Qg = 42.5–60 nC |
| D | Drain | Main high-side or low-side power path; electrically connected to metal tab in TO-220F for thermal conduction and electrical isolation |
| S | Source | Reference node for gate drive and current sensing; ties to PCB ground or source node in synchronous rectifier configurations |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ Technology | Reduces RDS(ON) × Qg FOM by >30% vs. conventional trench MOSFETs, improving efficiency in high-frequency SMPS |
| 100% UIS Tested | Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers in inductive load switching |
| Low Crss / High gFS | Crss = 38 pF and gFS = 100 S enable stable gate control and reduced voltage overshoot during commutation |
| RoHS & Halogen-Free | Complies with IPC-1752A material declaration requirements for industrial and automotive-qualified supply chains |
| Body Diode trr | trr = 26 ns ensures minimal reverse recovery loss in synchronous rectifier operation at ≥100 kHz |
Applications
| Server VRM Synchronous Rectification | Industrial BLDC Motor Inverter |
|---|---|
Use Scenario: High-current, high-frequency buck converter in 48 V server power delivery, operating at 500 kHz with 60–80 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 95%. Use Value: RDS(ON) < 3.3 mΩ cuts conduction loss by >65% vs. 40 V Schottky, while Qrr = 87 nC minimizes body-diode recovery penalty. |
Use Scenario: 3-phase inverter stage in 1–5 kW industrial BLDC motor drive, with 60 V DC bus and 30–50 A phase current. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) N-channel switch in half-bridge leg, handling PWM switching and regenerative braking. Use Value: 100% UIS testing ensures survival during motor short-circuit events; 4.1°C/W RθJC enables compact heatsinking without forced air. |
| Telecom DC/DC Brick | UPS Battery Charging Stage |
Use Scenario: Isolated forward or LLC resonant converter in 19-inch rack-mount telecom power supply, delivering 12 V/40 A output. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating with zero-voltage switching (ZVS) control. Use Value: Low Qgd = 10 nC improves ZVS margin; VGS(th) = 2.4–3.4 V ensures reliable turn-on with standard 5 V gate drivers. |
Use Scenario: Bidirectional DC/DC stage in online UPS, charging 48 V Li-ion battery bank from 380 V DC bus via two-stage conversion. IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated buck-boost charger, handling 60 V reverse polarity fault tolerance. Use Value: 60 V VDS withstands battery overvoltage transients; EAS = 184 mJ absorbs energy during sudden load disconnect events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | VDS = 40 V, RDS(ON) = 4.0 mΩ @ 10 V, Qg = 131 nC, TO-220 package (non-insulated tab) | Limited to ≤40 V systems; higher gate charge increases driver loss and limits switching frequency | Select only if 40 V rating suffices and lower cost outweighs efficiency penalty in <100 kHz designs |
| STP75NF75 | VDS = 75 V, RDS(ON) = 10.5 mΩ @ 10 V, Qg = 120 nC, TO-220 package (non-insulated tab) | Higher RDS(ON) and Qg increase conduction and switching losses; no 100% UIS test documentation | Acceptable for lower-current (<30 A), lower-frequency (<50 kHz) motor control where avalanche margin is secondary |
Compared with IRF1404PBF and STP75NF75, the AOTF66616L provides superior 60 V rating, lower RDS(ON), lower Qg, and production-validated avalanche ruggedness-making it optimal for high-efficiency, high-reliability 48 V industrial and telecom power stages.
Availability
AOTF66616L is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC/DC bricks, and UPS battery charging stages requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.
Supply support for AOTF66616L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOTF66616L belongs to AOS's AlphaSGT™ Trench MOSFET product line, engineered specifically for high-current, high-frequency power conversion where low RDS(ON) × Qg FOM and avalanche reliability are critical design requirements.
FAQ
What is the maximum continuous drain current rating for AOTF66616L at case temperature of 100°C?
The AOTF66616L supports 30 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 4.1°C/W RθJC and 150°C maximum junction temperature, making it suitable for convection-cooled industrial enclosures with controlled ambient conditions.
Does AOTF66616L have an insulated package, and how does that affect heatsink mounting?
Yes, the AOTF66616L uses the TO-220F package with an electrically insulated drain tab, allowing direct mounting to a common heatsink without requiring a thermal pad or insulating washer. This simplifies mechanical assembly and improves thermal transfer efficiency compared to standard TO-220 variants.
What is the gate threshold voltage range for AOTF66616L, and how does it impact 5 V logic-level drive compatibility?
The AOTF66616L has a gate threshold voltage VGS(th) of 2.4–3.4 V at TJ = 25°C and 2.6–4.1 V at TJ = 125°C. This ensures reliable turn-on with standard 5 V microcontroller or gate driver outputs, even under elevated temperature conditions typical in enclosed motor drives.
How is the avalanche energy rating of AOTF66616L validated, and what test condition applies?
The AOTF66616L's EAS = 184 mJ rating is validated via 100% production unclamped inductive switching (UIS) testing with L = 0.3 mH, per JEDEC standards. Each unit undergoes this stress test, confirming robustness against inductive turn-off energy in motor and solenoid drive applications.
Can AOTF66616L be used in synchronous rectification for 48 V input DC/DC converters, and what parameters support that use case?
Yes, the AOTF66616L is explicitly recommended for synchronous rectification in DC/DC and AC/DC converters. Its 60 V VDS, RDS(ON) < 3.3 mΩ, low Qrr = 87 nC, and fast trr = 26 ns make it ideal for 48 V input stages operating at ≥200 kHz, minimizing both conduction and reverse recovery losses.
AOTF66616L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Ta), 72.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2870 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 8.3W (Ta), 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
AOTF66616L FAQ
1.How can I place an order for AOTF66616L through Aetrix?
Please submit a Request for Quotation (RFQ) for AOTF66616L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOTF66616L reliable?
The price and inventory of AOTF66616L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF66616L is usually 5 days.
3.What payment methods are accepted for AOTF66616L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF66616L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOTF66616L?
AOTF66616L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOTF66616L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOTF66616L?
For technical support, including AOTF66616L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF66616L requirements.
6.How does Aetrix verify that AOTF66616L is sourced from the original manufacturer or authorized distributors?
All AOTF66616L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF66616L meets industry standards.
7.What is the process for return or replacement of AOTF66616L?
All AOTF66616L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF66616L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOTF66616L part is unused and in its original packaging.
Return procedure for AOTF66616L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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