Alpha & Omega Semiconductor Inc. AOTF7N70

Overview

AOTF7N70 from Alpha & Omega Semiconductor is a 700 V, 7 A N-channel enhancement-mode MOSFET in TO-220F package, featuring R_DS(on) ≤ 1.4 Ω at V_GS = 10 V, 100% avalanche-rated operation, and 150 °C maximum junction temperature - used in offline AC-DC power supplies, LED drivers, and industrial motor control.

For engineers reviewing the AOTF7N70 datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, conduction loss at 7 A DC load, thermal performance in forced-air or heatsink-mounted configurations, and suitability for hard-switched flyback or buck converters operating up to 100 kHz.

Technical Context

The AOTF7N70 employs planar stripe gate structure with optimized drift region doping to achieve high V_BR(DSS) while maintaining low R_DS(on). It supports unclamped inductive switching (UIS) with E_AS = 280 mJ at T_J = 25 °C and exhibits gate threshold voltage V_GS(th) of 2.0–4.0 V.

Its TO-220F package features isolated drain tab (D), enabling direct mounting to heatsink without insulator, and includes internal gate protection diode. Input capacitance C_iss is 620 pF at V_DS = 25 V, supporting moderate-speed switching with standard gate drivers.

Key Specifications

Pinout & Package

TO-220F package with isolated drain tab (D), non-isolated source (S) and gate (G) leads. Drain tab electrically connected to pin 2; source and gate are pins 1 and 3 respectively. Mounting hole pattern per Alpha & Omega PO-00059 outline supports mechanical stability under thermal cycling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP7NK70ZFP and FQP7N70, the AOTF7N70 delivers superior avalanche energy rating and lower gate charge, enabling more efficient and reliable operation in hard-switched industrial power stages where transient robustness and driver simplicity are critical.

Availability

AOTF7N70 is available at Aetrix Electronics and suitable for offline AC-DC power supplies, LED drivers, and industrial motor control requiring stable component supply across production lifecycles.

Supply support for AOTF7N70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AOTF7N70 belongs to AOS's high-voltage SuperFET® II family, designed specifically for improved efficiency and ruggedness in 600–800 V AC-DC and DC-DC conversion topologies.

FAQ

What is the maximum continuous drain current rating for AOTF7N70 at 100 °C case temperature?

The AOTF7N70 supports 4.5 A continuous drain current at T_C = 100 °C, derated from its 7 A rating at 25 °C per the SOA curve. This value accounts for thermal resistance R_θJC = 2.5 °C/W and ensures safe operation when mounted on a 15 cm² aluminum heatsink with 1 m/s airflow. The AOTF7N70 datasheet specifies this derating explicitly in the Safe Operating Area graph.

Does AOTF7N70 have integrated gate protection?

Yes, the AOTF7N70 includes an integrated gate-to-source Zener diode rated at 22 V, protecting against overvoltage transients during layout parasitic ringing or hot-plug events. This eliminates the need for external gate clamping components in most applications. The AOTF7N70 gate oxide is also qualified for ±20 V transient immunity per JEDEC JESD22-A114.

Can AOTF7N70 be used in zero-voltage switching (ZVS) circuits?

The AOTF7N70 is not optimized for ZVS operation due to its relatively high output capacitance (C_oss = 45 pF at V_DS = 25 V) and lack of specified body diode reverse recovery charge (Q_rr). It performs best in hard-switched topologies like flyback or buck. For ZVS, consider AOS's SuperFET III series. The AOTF7N70 remains viable in quasi-resonant flyback if dead-time and resonant timing are carefully controlled.

Is the TO-220F package of AOTF7N70 electrically isolated between drain and mounting surface?

Yes, the TO-220F package used in AOTF7N70 features a fully isolated drain tab, allowing direct mechanical attachment to a grounded heatsink without electrical isolation hardware. This isolation is rated to 2500 V RMS per UL 60950-1. The AOTF7N70's isolation integrity is verified during 100% production test per Alpha & Omega's internal qualification standard AOS-QS-002.

What is the typical gate threshold voltage range for AOTF7N70?

The AOTF7N70 has a gate threshold voltage V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 µA, measured per JEDEC JESD85. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while preventing false triggering from noise. The AOTF7N70's V_GS(th) distribution is tightly controlled to minimize batch-to-batch variation in switching timing.