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Alpha & Omega Semiconductor Inc. AOTS21313C
- Part No.:
- AOTS21313C
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-74, SOT-457
- Datasheet:
-
AOTS21313C.pdf
- Description:
- MOSFET P-CH 30V 7.3A 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,043
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Product details
Overview
AOTS21313C from Alpha & Omega Semiconductor is a -30V, 7.3A P-channel enhancement-mode MOSFET in TSOP-6 package, featuring RDS(ON) < 32 mΩ at VGS = -10 V and < 55 mΩ at VGS = -4.5 V, low gate charge (Qg = 22–33 nC), and integrated ESD protection - optimized for compact, high-efficiency load switching in portable power management.
For engineers reviewing the AOTS21313C datasheet, pinout, applications, or equivalent options, key selection criteria include verified P-channel logic-level drive capability, thermal resistance (RθJA = 75 °C/W on 1-in² FR-4), body diode recovery performance (Qrr = 17 nC), and SOA compliance under unclamped inductive switching.
Technical Context
This device employs trench power MOSFET technology to achieve low RDS(ON) and fast switching with Qg(10V) = 22–33 nC and Qgd = 6.5 nC. Its gate threshold voltage (VGS(th) = -1.2 to -2.2 V) ensures reliable turn-on with standard logic-level control signals down to -4.5 V.
The AOTS21313C supports pulsed drain current up to -29 A and operates across -55 to +150 °C junction temperature range. Its dynamic parameters - including tr = 9 ns, tf = 19 ns, and Ciss = 1100 pF - are characterized under standardized test conditions (VGS = -10 V, VDS = -15 V, ID = -7.3 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; defines safe operating ceiling in high-side switch configurations. |
| ID (VGS = -10 V) | -7.3 A - Continuous DC current rating at full gate drive; determines steady-state load capacity in battery-powered systems. |
| RDS(ON) (VGS = -10 V) | < 32 mΩ - Low conduction loss enabling <150 mW I²R dissipation at 7.3 A; critical for thermally constrained PCB layouts. |
| RDS(ON) (VGS = -4.5 V) | < 55 mΩ - Confirmed logic-level operation; supports direct interface with 3.3 V/5 V microcontroller GPIO without level-shifting. |
| Qg(10V) | 22–33 nC - Total gate charge defining drive strength requirement; enables efficient PWM switching up to ~1 MHz with ≤3 Ω gate resistor. |
| VGS(th) | -1.2 to -2.2 V - Gate threshold spread ensuring robust turn-on margin across temperature and process variation. |
| RθJA | 75 °C/W - Measured on 1-in² FR-4 board with 2 oz copper; sets maximum power derating curve for ambient temperature design. |
Pinout & Package
Package: TSOP-6 (Thin Small Outline Package, 6-pin, 1.6 mm × 2.9 mm footprint, 0.95 mm height, exposed drain pad). Pin 1 marked by notch or dot; lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main current path from load to supply rail; electrically connected to exposed thermal pad for enhanced heat dissipation. |
| 2 (D) | Drain | Second drain terminal - paralleled internally with Pin 1 to reduce package inductance and improve current sharing. |
| 3 (G) | Gate | Control input; requires stable negative voltage relative to source to turn on; sensitive to ESD (integrated protection provided). |
| 4 (S) | Source | Reference node for gate drive and current return path; tied to system ground or positive rail depending on high-/low-side configuration. |
| 5 (D) | Drain | Third drain terminal - part of multi-drain structure optimizing thermal and electrical performance in high-current switching. |
| 6 (D) | Drain | Fourth drain terminal - completes quad-drain layout for minimized RDS(ON) and improved pulse current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET Technology | Enables sub-32 mΩ RDS(ON) in TSOP-6 footprint while maintaining rugged avalanche capability (UIS rated). |
| Logic-Level Gate Drive (VGS = -4.5 V) | Guarantees full enhancement with common 3.3 V/5 V controllers - eliminates need for external gate drivers in space-constrained designs. |
| Low Gate Charge (Qg = 22–33 nC) | Reduces driver power loss and enables faster switching transitions, supporting high-frequency DC-DC and load-switching applications. |
| Integrated ESD Protection | HBM rating ≥ ±2 kV - protects against handling damage during assembly without requiring external TVS components. |
| RoHS and Halogen-Free Compliance | Meets IPC-1752A material declaration requirements and EU Directive 2011/65/EU for environmentally responsible manufacturing. |
Applications
| Battery-Powered Load Switch | USB Port Power Control |
|---|---|
|
Use Scenario: Enabling/disabling power to peripherals in smartphones, tablets, and wearables using a single P-channel MOSFET controlled by an MCU GPIO. IC Role / Device Role: High-side load switch managing 3.3 V or 5 V rail delivery with minimal quiescent current and fast response. Use Value: Achieves <1 µA shutdown leakage and <55 mΩ on-resistance at -4.5 V gate drive - extending battery life and reducing thermal load. |
Use Scenario: Implementing overcurrent-protected hot-swap functionality for USB Type-A/C downstream ports in docking stations and hubs. IC Role / Device Role: Current-controlled high-side switch with built-in body diode for reverse-polarity protection and inrush limiting. Use Value: Supports -7.3 A continuous current and withstands unclamped inductive transients per UIS testing - enhancing system reliability. |
| Industrial Sensor Node Power Gating | Automotive Body-Control Module (BCM) Subsystem |
|
Use Scenario: Cycling power to analog sensors, RF transceivers, or memory in IIoT edge nodes to meet ultra-low-power sleep mode targets. IC Role / Device Role: Precision load switch with tight VGS(th) distribution (-1.2 to -2.2 V) ensuring consistent turn-on across temperature and unit variance. Use Value: Delivers predictable RDS(ON) stability over -55 to +125 °C ambient - critical for long-term field deployment accuracy. |
Use Scenario: Controlling non-safety-critical loads (e.g., interior lighting, HVAC actuators) in 12 V automotive subsystems with CAN/LIN communication interfaces. IC Role / Device Role: Robust P-channel switch rated for 150 °C junction temperature and qualified per AEC-Q101 stress test requirements. Use Value: Maintains <32 mΩ RDS(ON) at elevated temperatures and exhibits low Crss (105 pF) to minimize Miller-induced shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-E3 | RDS(ON) = 115 mΩ @ -4.5 V; higher gate charge (Qg = 5.5 nC); SOT-23 package (smaller, lower thermal mass). | Limited to ≤2 A continuous loads; suitable only for ultra-low-power, low-current gating where board space is paramount. | Select when footprint size outweighs conduction loss - not recommended for >3 A applications due to thermal limitations. |
| DMG1012T-7 | RDS(ON) = 45 mΩ @ -4.5 V; Qg = 4.5 nC; same TSOP-6 footprint but no specified UIS rating or ESD protection. | Lacks documented unclamped inductive switching robustness and integrated ESD hardening - requires external protection in noisy environments. | Prefer for cost-sensitive consumer applications where transient immunity and ESD margin are secondary to BOM count reduction. |
Compared with Si2301DDS-T1-E3 and DMG1012T-7, the AOTS21313C delivers superior thermal performance (75 °C/W vs. >120 °C/W), lower RDS(ON) at logic-level drive, and factory-integrated ESD protection - making it the preferred choice for industrial and automotive-grade load switching where reliability and efficiency are co-prioritized.
Availability
AOTS21313C is available at Aetrix Electronics and suitable for battery-powered load switching, USB power delivery control, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for AOTS21313C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOTS21313C belongs to AOS's logic-level P-channel Trench MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in portable and embedded systems demanding low RDS(ON) and robust gate drive compatibility.
FAQ
What is the maximum continuous drain current for AOTS21313C at 70°C ambient temperature?
The AOTS21313C supports -7.3 A continuous drain current at TA = 70°C with proper PCB thermal design (1-in² 2 oz copper). This rating assumes junction temperature remains ≤150°C, and derating follows the RθJA = 75 °C/W curve. At higher ambient temperatures or reduced copper area, current must be reduced accordingly to maintain safe thermal operation of the AOTS21313C.
Does AOTS21313C support true logic-level gate drive at 3.3 V microcontroller outputs?
Yes - the AOTS21313C is fully characterized down to VGS = -4.5 V, with RDS(ON) guaranteed < 55 mΩ and VGS(th) spanning -1.2 to -2.2 V. When driven by a 3.3 V MCU (outputting 0 V / -3.3 V), the AOTS21313C achieves usable conduction, though optimal performance occurs at -4.5 V or lower. The AOTS21313C datasheet confirms this behavior in Figure 3 and Table "Electrical Characteristics".
Is AOTS21313C qualified for automotive applications?
The AOTS21313C is not AEC-Q101 qualified per official AOS documentation. While it operates across -55 to +150°C and meets key stress-test metrics (e.g., UIS, ESD), formal automotive qualification requires additional testing and documentation. For automotive body-control modules, designers should verify system-level validation; the AOTS21313C may serve in non-safety-critical roles pending internal qualification - but AOS does not list it as AEC-Q101 certified.
What is the body diode forward voltage (VSD) of AOTS21313C and how does it affect reverse-current paths?
The AOTS21313C body diode exhibits VSD = -0.8 to -1.0 V at IS = -1 A and TJ = 25°C, per datasheet Figure 6. This forward voltage defines conduction loss during reverse-biased operation (e.g., back-powering prevention or freewheeling). Its Qrr = 17 nC and trr = 12 ns enable fast recovery in synchronous rectification or bidirectional power paths - a key advantage over generic P-MOSFETs in the AOTS21313C's class.
Can AOTS21313C replace an N-channel MOSFET in high-side switching configurations?
Yes - the AOTS21313C is explicitly designed for high-side load switching as a P-channel alternative to N-channel solutions requiring gate-boost circuitry. Its -30 V VDS, low RDS(ON), and logic-compatible gate simplify high-side implementation without charge pumps or level shifters. Unlike many N-MOSFETs, the AOTS21313C enables direct MCU control in high-side topology - a core design value confirmed in AOS's application notes for the AOTS21313C family.
AOTS21313C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 32mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
AOTS21313C FAQ
1.How can I place an order for AOTS21313C through Aetrix?
Please submit a Request for Quotation (RFQ) for AOTS21313C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOTS21313C reliable?
The price and inventory of AOTS21313C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTS21313C is usually 5 days.
3.What payment methods are accepted for AOTS21313C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTS21313C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOTS21313C?
AOTS21313C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOTS21313C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOTS21313C?
For technical support, including AOTS21313C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTS21313C requirements.
6.How does Aetrix verify that AOTS21313C is sourced from the original manufacturer or authorized distributors?
All AOTS21313C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTS21313C meets industry standards.
7.What is the process for return or replacement of AOTS21313C?
All AOTS21313C units undergo pre-shipment inspection (PSI). If there is an issue with AOTS21313C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOTS21313C part is unused and in its original packaging.
Return procedure for AOTS21313C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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