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Alpha & Omega Semiconductor Inc. AOTS21319C

Part No.:
AOTS21319C
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
SC-74, SOT-457
Datasheet:
AetrixAOTS21319C.pdf
Description:
MOSFET P-CH 30V 2.7A 6TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,771

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Product details

Overview

AOTS21319C from Alpha & Omega Semiconductor is a -30V, -2.7A P-channel Trench Power MOSFET in TSOP-6 package, featuring RDS(ON) < 100 mΩ at VGS = -10 V and < 150 mΩ at VGS = -4.5 V, low gate charge (Qg(10V) = 6–12 nC), and ESD protection - designed for compact load switch applications in portable power management.

For engineers reviewing the AOTS21319C datasheet, pinout, applications, or equivalent options, key selection criteria include verified P-channel logic-level drive capability, thermal performance under pulsed load conditions (RθJA = 140 °C/W), body diode recovery characteristics (trr = 9 ns, Qrr = 13 nC), and RoHS/halogen-free compliance for space-constrained industrial and consumer designs.

Technical Context

The AOTS21319C employs trench-gate power MOSFET technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (VGS(th) = -1.2 to -2.2 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level control signals.

Dynamic parameters are characterized at VGS = -10 V, VDS = -15 V, ID = -2.7 A: td(on) = 8 ns, tr = 5 ns, td(off) = 25 ns, tf = 9.5 ns. Input capacitance Ciss = 320 pF and reverse transfer capacitance Crss = 35 pF support stable high-frequency operation in DC-DC and load-switch topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -30 V - Maximum drain-source blocking voltage; supports 24 V rail and automotive battery-supplied systems with margin.
ID (VGS = -10 V) -2.7 A - Continuous drain current rating at 25 °C ambient; derates to -2.1 A at 70 °C per absolute max ratings.
RDS(ON) (VGS = -10 V) < 100 mΩ - Enables <100 mW conduction loss at 1 A, critical for thermally constrained PCB layouts.
RDS(ON) (VGS = -4.5 V) < 150 mΩ - Confirmed logic-level operation with 3.3 V microcontroller GPIOs without level-shifting.
Qg(10V) 6–12 nC - Low total gate charge reduces driver power and enables efficient PWM switching up to ~1 MHz.
trr / Qrr 9 ns / 13 nC - Fast body diode recovery minimizes shoot-through risk and improves efficiency in bidirectional or synchronous rectifier use cases.
RθJA 140 °C/W - Measured on 1 in² FR-4 board with 2 oz copper; defines thermal headroom for 0.8 W steady-state dissipation at TA = 70 °C.

Pinout & Package

Package: TSOP-6 (Thin Small Outline Package, 6-pin, 1.6 mm × 2.9 mm footprint, 0.95 mm height). Pin 1 marked by notch or dot; bottom view shows exposed drain pad for thermal enhancement.

Pin/Terminal Circuit Role Design Meaning
1 (D) Drain Main high-side current path; internally connected to exposed thermal pad - must be soldered to PCB copper pour for thermal management.
2 (D) Drain Second drain terminal; paralleled with Pin 1 to reduce package inductance and improve current sharing.
3 (G) Gate Control input; requires no external pull-down for default-off behavior in load switch configurations.
4 (S) Source Reference node for gate drive; connects to system ground or regulated supply return in high-side switch layout.
5 (D) Drain Third drain terminal; enhances thermal and electrical robustness in continuous conduction mode.
6 (D) Drain Fourth drain terminal; provides lowest possible RDS(ON) and thermal resistance via multi-terminal drain design.

Key Features

Feature Design Value
Trench Power MOSFET architecture Delivers <100 mΩ RDS(ON) in TSOP-6, enabling higher current density than planar P-channel alternatives.
Logic-level gate drive (VGS(th) ≤ -2.2 V) Guarantees full enhancement with 3.3 V or 5 V controllers - eliminates need for gate drivers or level shifters.
Low Qg(4.5V) = 3–6 nC Reduces gate drive power loss and allows direct MCU GPIO switching at moderate frequencies (≤500 kHz).
ESD protection (HBM) Rated per JEDEC JS-001; withstands ≥2 kV human-body-model discharge - improves board-level reliability during handling and assembly.
RoHS and halogen-free compliant Meets IPC-1752A material declaration requirements and EU Directive 2011/65/EU for environmentally restricted substances.

Applications

Battery-Powered Load Switch USB Port Power Control

Use Scenario: Isolating backup battery from main system during sleep mode to prevent leakage current.

IC Role / Device Role: High-side P-channel MOSFET configured as active-low controlled load switch.

Use Value: RDS(ON) < 150 mΩ at 3.3 V gate drive ensures <1.7 mW dropout at 100 mA, extending battery life beyond 30 days in deep-sleep states.

Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices based on enumeration status.

IC Role / Device Role: Reverse-polarity protected, logic-level compatible power switch with integrated ESD protection.

Use Value: Fast tf = 9.5 ns and low Qrr = 13 nC prevent bus glitches during hot-plug events and reduce electromagnetic emissions.

Industrial Sensor Node Power Gating White Goods Motor Driver Bias Supply

Use Scenario: Cycling power to analog front-end circuitry in wireless sensor transmitters to meet ultra-low average current targets.

IC Role / Device Role: Low-quiescent-current, thermally robust P-channel switch with validated TJ = -55 to 150 °C operation.

Use Value: RθJA = 140 °C/W and 150 °C max junction temperature allow continuous operation at 70 °C ambient without derating in sealed enclosures.

Use Scenario: Controlling auxiliary 12 V bias rail for gate drivers in washing machine BLDC motor inverters.

IC Role / Device Role: High-reliability, high-pulse-current capable switch handling repetitive 2.1 A IDM surges per datasheet.

Use Value: Verified unclamped inductive switching (UIS) capability supports safe interruption of inductive loads without snubbers or clamps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si2301DDS-T1-GE3 RDS(ON) = 115 mΩ @ VGS = -4.5 V; Qg = 5.5 nC; SOT-23 package; lower current rating (ID = -2.3 A). Smaller footprint but higher RDS(ON) and reduced thermal mass - suitable only for sub-1 A continuous loads. Select when board area is critical and peak current remains below 2 A; verify thermal margin with RθJA = 200 °C/W.
DMG2305UVT-7 RDS(ON) = 48 mΩ @ VGS = -4.5 V; Qg = 10.5 nC; SOT-26 package; higher gate charge and tighter VGS(th) distribution (-0.5 to -1.2 V). Lower on-resistance enables higher current, but wider VGS(th) range risks incomplete turn-on with weak 3.3 V drivers. Prefer for high-efficiency 2–3 A loads where gate drive strength exceeds 5 mA; avoid with marginal GPIO drive capability.

Compared with Si2301DDS-T1-GE3 and DMG2305UVT-7, the AOTS21319C delivers optimal balance of low RDS(ON), predictable logic-level turn-on, and robust thermal performance in TSOP-6 - making it preferred for 2.7 A load switches requiring long-term reliability and minimal layout complexity.

Availability

AOTS21319C is available at Aetrix Electronics and suitable for battery-powered load switches, USB power delivery control, and industrial sensor node power gating requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for AOTS21319C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOTS21319C belongs to AOS's logic-level P-channel TrenchMOS® family, engineered specifically for space-constrained, low-voltage load switching applications demanding high reliability, low conduction loss, and simplified gate drive.

FAQ

What is the maximum continuous drain current for AOTS21319C at 70°C ambient temperature?

The AOTS21319C supports -2.1 A continuous drain current at TA = 70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its RθJA = 140 °C/W on standard FR-4 PCBs; actual current capacity may increase with enhanced heatsinking or lower ambient temperatures.

Does AOTS21319C require a gate resistor for typical load switch operation?

No external gate resistor is required for basic on/off load switching with AOTS21319C due to its low Qg(4.5V) = 3–6 nC and logic-level compatibility. However, a small series resistor (10–47 Ω) is recommended to dampen ringing during fast transitions and reduce EMI in noise-sensitive applications.

Can AOTS21319C be used in reverse polarity protection circuits?

Yes - the AOTS21319C is commonly deployed in reverse polarity protection due to its P-channel configuration, low RDS(ON), and built-in body diode. When placed in the high-side rail with source tied to input and drain to load, it blocks reverse voltage while conducting forward current with minimal drop.

What is the gate threshold voltage range for AOTS21319C, and how does it affect 3.3 V control?

The AOTS21319C has a guaranteed VGS(th) range of -1.2 V to -2.2 V. At 3.3 V logic, the effective gate-source voltage is -3.3 V, well above the maximum threshold, ensuring strong enhancement and full conduction - confirmed by RDS(ON) < 150 mΩ at VGS = -4.5 V.

Is the exposed drain pad on the AOTS21319C package electrically isolated?

No - the exposed drain pad on the AOTS21319C TSOP-6 package is electrically connected to all drain pins (Pins 1, 2, 5, 6) and must be soldered to a PCB copper pour tied to the drain net. It serves both thermal conduction and current-carrying functions; floating or grounding the pad will cause malfunction or damage.

AOTS21319C Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
320 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

AOTS21319C FAQ

1.How can I place an order for AOTS21319C through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTS21319C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTS21319C reliable?

The price and inventory of AOTS21319C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTS21319C is usually 5 days.

3.What payment methods are accepted for AOTS21319C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTS21319C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTS21319C?

AOTS21319C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTS21319C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTS21319C?

For technical support, including AOTS21319C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTS21319C requirements.

6.How does Aetrix verify that AOTS21319C is sourced from the original manufacturer or authorized distributors?

All AOTS21319C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTS21319C meets industry standards.

7.What is the process for return or replacement of AOTS21319C?

All AOTS21319C units undergo pre-shipment inspection (PSI). If there is an issue with AOTS21319C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTS21319C part is unused and in its original packaging.

Return procedure for AOTS21319C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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