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Alpha & Omega Semiconductor Inc. AOUS66416
- Part No.:
- AOUS66416
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 3-PowerSMD, Flat Leads
- Datasheet:
-
AOUS66416.pdf
- Description:
- MOSFET N-CH 40V 33A/69A ULTRASO8
- Quantity:
- Payment:
- Shipping:
Inventory:899
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Product details
Overview
AOUS66416 from Alpha & Omega Semiconductor is a 40V N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-frequency synchronous rectification in server and telecom power supplies. It delivers RDS(ON) < 3.3 mΩ at VGS = 10 V, 69 A continuous drain current, and 100% UIS-tested ruggedness for reliable operation under transient stress.
For engineers reviewing the AOUS66416 datasheet, pinout, applications, or equivalent options, key selection criteria include its ultra-low gate charge (Qg(10V) = 31–50 nC), body-diode reverse recovery performance (Qrr = 30 nC), thermal resistance (RθJC = 1.7 °C/W), and UltraSO-8™ package compatibility with high-density PCB layouts.
Technical Context
The AOUS66416 employs AlphaSGT™ trench-gate silicon technology to achieve low RDS(ON) and high figure-of-merit (Qg × RDS(ON)). Its gate threshold voltage (1.4–2.5 V typ.) enables robust 4.5 V logic-level drive, while the integrated body diode supports synchronous rectification with trr = 14 ns and Qrr = 30 nC.
Thermally, it features a low junction-to-case resistance of 1.7 °C/W and is rated for continuous operation up to TJ = 150 °C. The device is 100% tested for unclamped inductive switching (UIS) and gate resistance (Rg = 1–3 Ω), ensuring production-level reliability in hard-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage suitable for 12 V and 48 V intermediate bus applications. |
| RDS(ON) @ VGS = 10 V | < 3.3 mΩ - Enables <1.5 W conduction loss at 69 A, critical for high-efficiency server VRMs. |
| RDS(ON) @ VGS = 4.5 V | < 5.0 mΩ - Ensures full enhancement with standard 5 V logic drivers and PWM controllers. |
| Qg(10V) | 31–50 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in LLC and phase-shifted full-bridge converters. |
| Qrr | 30 nC - Minimizes body-diode recovery loss during synchronous FET turn-on, improving light-load efficiency. |
| RθJC | 1.7 °C/W - Allows direct heatsink mounting for high-power density designs without thermal derating penalties. |
| ID (continuous) | 69 A - Package-limited current rating validated for sustained operation at TC = 100 °C. |
Pinout & Package
AOUS66416 is housed in the UltraSO-8™ package - an enhanced SO-8 variant with exposed drain paddle for improved thermal and electrical performance. The package measures 5.0 mm × 6.0 mm × 1.0 mm and supports reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives PWM signal; low input capacitance (Ciss = 2575 pF) minimizes driver loading. |
| D (Drain) | High-side switch node | Connected to exposed paddle; carries main power path current and dissipates heat directly to PCB/heatsink. |
| S (Source) | Reference node / return path | Provides low-inductance source connection for gate drive loop; ties to power ground plane. |
| Pin 1–3, 5–8 | Drain (parallel) | Internally bonded to D terminal and exposed paddle; increases current handling and thermal conduction. |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ trench technology | Delivers industry-leading RDS(ON) × Qg FOM for high-frequency, high-efficiency switching. |
| 100% UIS tested | Guarantees ruggedness against voltage overshoot during inductive turn-off, eliminating need for snubbers in DC-DC stages. |
| UltraSO-8™ package | Reduces RθJC by ~40% vs. standard SO-8, enabling 2× higher power density in space-constrained server modules. |
| Low Qgd/Qg ratio | Qgd = 2 nC (typ.) yields sharp Miller plateau transition, improving EMI control and dV/dt immunity. |
| RoHS & Halogen-Free | Complies with IPC-1752A material declaration requirements for data center and telecom OEMs. |
Applications
| Server VRM High-Side Switch | ATX PSU Synchronous Rectifier |
|---|---|
Use Scenario: Primary-side switch in multiphase buck converters delivering 50–200 A to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side power MOSFET controlled by digital PWM controller with 500 kHz–1.5 MHz switching frequency. Use Value: Sub-3.3 mΩ RDS(ON) and 1.7 °C/W RθJC reduce conduction and thermal losses, enabling >95% peak efficiency at 12 V input. |
Use Scenario: Secondary-side synchronous rectifier in resonant LLC converters for ATX main 12 V rail. IC Role / Device Role / Timing Role: Low-side synchronous FET driven by self-driven or controller-synchronized gate signal. Use Value: 30 nC Qrr and fast trr = 14 ns minimize reverse recovery loss, boosting light-load efficiency by up to 1.2%. |
| Telecom 48 V Intermediate Bus Converter | Industrial DC-DC Module Rectifier |
Use Scenario: Output rectification in isolated 48 V–12 V/5 V flyback or forward converters for base station power. IC Role / Device Role / Timing Role: Synchronous rectifier operating in continuous conduction mode (CCM) with 200–500 kHz frequency. Use Value: 69 A ID rating and 100% UIS testing ensure reliability under telecom-grade surge and load-dump transients. |
Use Scenario: High-current output stage in DIN-rail mounted 24 V/48 V industrial DC-DC modules. IC Role / Device Role / Timing Role: Low-RDS(ON) rectifier paired with isolated gate driver for reinforced insulation compliance. Use Value: UltraSO-8™ thermal performance allows full 69 A rating at TC = 85 °C without forced air, reducing system cooling cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP036N04L | RDS(ON) = 3.6 mΩ @ 10 V; Qg = 54 nC; TO-252 (DPAK) package; RθJA = 60 °C/W. | Higher thermal resistance limits power density; suited for lower-frequency, lower-current designs where board area is less constrained. | Select when cost sensitivity outweighs thermal performance, and layout allows larger DPAK footprint. |
| Vishay SiR626DP | RDS(ON) = 3.2 mΩ @ 10 V; Qg = 42 nC; PowerPAK® SO-8; RθJC = 2.0 °C/W. | Slightly higher thermal resistance and larger gate charge increase conduction and switching loss in >1 MHz designs. | Preferable for legacy designs already using PowerPAK SO-8 footprints, but requires gate driver re-evaluation due to higher Qg. |
Compared with IPP036N04L and SiR626DP, the AOUS66416 offers the lowest RθJC and best Qg × RDS(ON) FOM, making it optimal for thermally constrained, high-frequency server and telecom power stages where PCB real estate and efficiency margins are critical.
Availability
AOUS66416 is available at Aetrix Electronics and suitable for server VRMs, ATX power supplies, telecom intermediate bus converters, and industrial DC-DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AOUS66416 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOUS66416 belongs to AOS's AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in data center and telecom power systems.
FAQ
What is the maximum continuous drain current rating for AOUS66416?
The AOUS66416 has a continuous drain current rating of 69 A at TC = 100 °C, limited by its UltraSO-8™ package thermal capability. At TC = 25 °C, the rating increases to 73.5 A. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal derating curves on page 4 of the datasheet.
Does AOUS66416 support 4.5 V logic-level gate drive?
Yes, the AOUS66416 is fully specified for 4.5 V gate drive: RDS(ON) is guaranteed < 5.0 mΩ at VGS = 4.5 V, and VGS(th) ranges from 1.4 V to 2.5 V (typ.), ensuring strong enhancement with standard 5 V PWM controllers and microcontroller GPIOs.
Is AOUS66416 suitable for unclamped inductive switching (UIS) applications?
Yes - the AOUS66416 is 100% UIS tested per JEDEC JESD22-A109, with avalanche energy EAS = 33 mJ (L = 0.3 mH). This makes it suitable for hard-switched topologies like flyback and forward converters where inductive energy must be safely absorbed without external clamping.
What is the gate-to-source leakage current specification for AOUS66416?
The gate-to-source leakage current (IGSS) for AOUS66416 is ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage ensures minimal gate drive current requirement and stable turn-off behavior in high-impedance gate drive circuits.
How does the body diode performance of AOUS66416 compare to standard MOSFETs?
The AOUS66416 features an optimized body diode with trr = 14 ns and Qrr = 30 nC at IF = 20 A and di/dt = 500 A/μs. This is significantly faster and lower-charge than typical trench MOSFETs, reducing switching loss and EMI in synchronous rectification applications.
AOUS66416 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- 3-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2575 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 73.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UltraSO-8™
AOUS66416 FAQ
1.How can I place an order for AOUS66416 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOUS66416 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOUS66416 reliable?
The price and inventory of AOUS66416 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOUS66416 is usually 5 days.
3.What payment methods are accepted for AOUS66416?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOUS66416 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOUS66416?
AOUS66416 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOUS66416 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOUS66416?
For technical support, including AOUS66416 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOUS66416 requirements.
6.How does Aetrix verify that AOUS66416 is sourced from the original manufacturer or authorized distributors?
All AOUS66416 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOUS66416 meets industry standards.
7.What is the process for return or replacement of AOUS66416?
All AOUS66416 units undergo pre-shipment inspection (PSI). If there is an issue with AOUS66416, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOUS66416 part is unused and in its original packaging.
Return procedure for AOUS66416:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AOUS66416 Tags
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