Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOW125A60

Name: AOW125A60
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOW125A60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AOW125A60

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AOW125A60.pdf

Description:: MOSFET N-CH 600V 28A TO262

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,987

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AOW125A60 from Alpha & Omega Semiconductor is a 600 V, 100 A N-channel MOSFET in TO-262 package, featuring R_DS(ON) ≤ 0.125 Ω at V_GS = 10 V, Q_g = 39 nC, and E_oss = 6.3 mJ at 400 V - optimized for high-efficiency SMPS with PFC, flyback, and LLC topologies.

For engineers reviewing the AOW125A60 datasheet, pinout, applications, or equivalent options, key selection criteria include its 700 V V_DS rating, 100% UIS-tested ruggedness, enhanced body diode (t_rr = 375 ns, Q_rr = 8 mC), and thermal resistance R_θJC = 0.4 °C/W for high-power switching reliability.

Technical Context

The AOW125A60 uses proprietary aMOS5™ technology to achieve low conduction loss and controlled switching behavior. Its gate threshold voltage (3.3–4.5 V) ensures robust noise immunity, while g_FS = 21 S supports fast, stable drive in hard-switched converters.

Dynamic parameters are characterized under standardized conditions: V_GS = 10 V, V_DS = 400 V, I_D = 14 A, R_G = 5 Ω. The device exhibits dv/dt ruggedness up to 20 V/ns and di/dt capability of 500 A/μs, enabling reliable operation in high-frequency resonant and quasi-resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switching in 400 V DC bus applications
R_DS(ON), max	0.125 Ω - enables <31 W conduction loss at 14 A continuous drain current
Q_g, typ	39 nC - determines gate drive power requirement and switching speed in 100–500 kHz designs
E_oss @ 400 V	6.3 mJ - quantifies output capacitance energy loss during zero-voltage switching transitions
t_rr	375 ns - defines body diode recovery time critical for synchronous rectification and LLC freewheeling
R_θJC	0.4 °C/W - allows direct heatsink mounting with minimal thermal interface resistance for >300 W dissipation
I_D, cont	100 A - maximum continuous drain current at T_C = 25 °C, derated linearly above 25 °C

Pinout & Package

Package: TO-262 (3-lead, straight lead, non-isolated tab). Drain-connected tab enables low-inductance, high-current PCB layout with direct thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring 10 V drive for full enhancement; R_G = 2.3 Ω internal gate resistance limits ringing
D	Drain	Main high-side switching node; electrically connected to metal tab for thermal and current conduction
S	Source	Power return path and reference for gate drive; forms low-impedance source loop with Kelvin connection capability

Key Features

Feature	Design Value
aMOS5™ technology	Enables 0.125 Ω R_DS(ON) at 600 V while maintaining <39 nC Q_g for balanced efficiency
Enhanced body diode	Reduces reverse recovery charge (Q_rr = 8 mC) and time (t_rr = 375 ns) versus standard superjunction MOSFETs
100% UIS tested	Guarantees unclamped inductive switching survival up to I_AS = 4.3 A, L = 60 mH per JEDEC JESD24-11
Optimized EMI profile	Controlled dv/dt (20 V/ns) and di/dt (500 A/μs) reduce radiated emissions without snubbers

Applications

Server PSU PFC Stage	Industrial Flyback Converter
Use Scenario: Active clamp PFC stage in 3 kW telecom rectifier operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor handling 100 A peak currents and 600 V blocking during boost cycle. Use Value: Low R_DS(ON) minimizes conduction loss; E_oss = 6.3 mJ enables efficient ZVS at light load.	Use Scenario: Primary-side switch in isolated 120 W industrial flyback supply with universal AC input. IC Role / Device Role / Timing Role: High-voltage switching element with integrated avalanche ruggedness for line transients. Use Value: 100% UIS testing ensures reliability against 1 kV surge events; t_rr = 375 ns prevents cross-conduction in self-driven synchronous rectification.
LLC Resonant Inverter	Microinverter DC/AC Stage
Use Scenario: Half-bridge primary switch in 500 W solar microinverter LLC topology with 380 V DC link. IC Role / Device Role / Timing Role: Zero-voltage switched power transistor with precise timing control via gate charge profile. Use Value: Q_g = 39 nC enables predictable turn-on delay (t_D(on) = 39 ns) and rise time (t_r = 34 ns) for accurate phase control.	Use Scenario: H-bridge switching device in 300 W photovoltaic microinverter converting DC to 230 V AC grid. IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive partial discharge and thermal cycling. Use Value: R_θJC = 0.4 °C/W supports compact heatsinking; 150 °C T_J(max) rating sustains 25-year field life at 85 °C ambient.

Server PSU PFC Stage

Industrial Flyback Converter

Use Scenario: Active clamp PFC stage in 3 kW telecom rectifier operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor handling 100 A peak currents and 600 V blocking during boost cycle.

Use Value: Low R_DS(ON) minimizes conduction loss; E_oss = 6.3 mJ enables efficient ZVS at light load.

Use Scenario: Primary-side switch in isolated 120 W industrial flyback supply with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching element with integrated avalanche ruggedness for line transients.

Use Value: 100% UIS testing ensures reliability against 1 kV surge events; t_rr = 375 ns prevents cross-conduction in self-driven synchronous rectification.

LLC Resonant Inverter

Microinverter DC/AC Stage

Use Scenario: Half-bridge primary switch in 500 W solar microinverter LLC topology with 380 V DC link.

IC Role / Device Role / Timing Role: Zero-voltage switched power transistor with precise timing control via gate charge profile.

Use Value: Q_g = 39 nC enables predictable turn-on delay (t_D(on) = 39 ns) and rise time (t_r = 34 ns) for accurate phase control.

Use Scenario: H-bridge switching device in 300 W photovoltaic microinverter converting DC to 230 V AC grid.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive partial discharge and thermal cycling.

Use Value: R_θJC = 0.4 °C/W supports compact heatsinking; 150 °C T_J(max) rating sustains 25-year field life at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(ON) = 0.115 Ω, Q_g = 42 nC, TO-247 package, R_θJC = 0.45 °C/W	Higher gate charge increases driver loss; larger TO-247 footprint requires PCB redesign	Preferred where higher avalanche energy (E_AS = 1200 mJ) is prioritized over thermal density
IXFH60N60P	R_DS(ON) = 0.135 Ω, Q_g = 32 nC, TO-247 package, no 100% UIS test documented	Lower Q_g improves switching efficiency but lacks guaranteed UIS ruggedness	Selected when gate drive power budget is constrained and transient stress is mitigated externally

Compared with STW62N60M2 and IXFH60N60P, the AOW125A60 delivers superior thermal performance (R_θJC = 0.4 °C/W) in a smaller TO-262 footprint, while maintaining lower R_DS(ON) than IXFH60N60P and verified UIS robustness absent in the latter - making it optimal for space-constrained, high-reliability SMPS designs.

Availability

AOW125A60 is available at Aetrix Electronics and suitable for server power supplies, industrial flyback converters, and microinverter DC/AC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOW125A60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOW125A60 belongs to AOS's aMOS5™ superjunction MOSFET product line, engineered for high-efficiency, high-density AC/DC and DC/DC conversion in next-generation power supplies and renewable energy inverters.

FAQ

What is the maximum junction temperature rating for the AOW125A60?

The AOW125A60 has a maximum junction temperature (T_J) rating of 150 °C, validated across all electrical specifications and safe operating area curves. This rating is used to define the SOA boundary, thermal derating slope (2.5 W/°C above 25 °C), and transient thermal impedance curves in the datasheet. Operation beyond 150 °C risks permanent parametric shift or failure. The AOW125A60 must be thermally managed using its 0.4 °C/W R_θJC path to maintain reliability.

Does the AOW125A60 have a fully characterized body diode for synchronous rectification?

Yes, the AOW125A60 features an enhanced body diode with fully specified reverse recovery parameters: t_rr = 375 ns, Q_rr = 8 mC, and I_RM = 34 A at T_J = 25 °C. These values are measured under standardized conditions (I_F = 14 A, dI/dt = 100 A/ms, V_DS = 400 V) and confirmed in Figure 6 (body-diode V_SD vs. I_S) and Figure 13 (thermal transient response). The AOW125A60's low Q_rr and soft recovery support reliable synchronous rectification in LLC and flyback topologies without external Schottky assist.

Is the AOW125A60 pin-compatible with the AOWF125A60?

No, the AOW125A60 is not pin-compatible with the AOWF125A60. While both share identical electrical specifications and die, the AOW125A60 uses a TO-262 package with non-isolated drain tab, whereas the AOWF125A60 uses TO-262F with isolated tab (plastic-insulated backside). Their pinouts differ mechanically: AOW125A60 has direct metal tab contact, while AOWF125A60 requires insulating hardware. PCB layout, thermal interface, and mounting must be redesigned when substituting between them. The AOW125A60 datasheet explicitly shows separate top/bottom views for each variant.

What is the gate threshold voltage range for the AOW125A60?

The AOW125A60 has a gate threshold voltage (V_GS(th)) range of 3.3 V to 4.5 V at T_J = 25 °C and I_D = 250 μA, with typical value 3.9 V. This range ensures stable turn-on across process variation and temperature, supporting robust gate drive design with 10 V logic-level signals. The parameter is validated per JEDEC JESD85 and appears in Table "Electrical Characteristics" on page 2 of the AOW125A60 datasheet Rev 2.1. Operating below 3.3 V risks incomplete enhancement and excessive R_DS(ON); above 4.5 V provides margin for noise immunity.

How is the 100% UIS testing performed on the AOW125A60?

The AOW125A60 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11, using L = 60 mH, I_AS = 4.3 A, R_G = 25 Ω, and starting T_J = 25 °C. Each unit is stressed once at rated conditions and verified for parametric integrity post-test. This screen ensures single-pulse avalanche capability without degradation - critical for handling line surges and transformer leakage spikes in offline SMPS. The test is distinct from repetitive avalanche rating (E_AS = 555 mJ) and is documented in the "Absolute Maximum Ratings" table as a production screening requirement for the AOW125A60.

AOW125A60 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: aMOS5™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2993 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 312.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

AOW125A60 FAQ

1.How can I place an order for AOW125A60 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOW125A60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOW125A60 reliable?

The price and inventory of AOW125A60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOW125A60 is usually 5 days.

3.What payment methods are accepted for AOW125A60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOW125A60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOW125A60?

AOW125A60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOW125A60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOW125A60?

For technical support, including AOW125A60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOW125A60 requirements.

6.How does Aetrix verify that AOW125A60 is sourced from the original manufacturer or authorized distributors?

All AOW125A60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOW125A60 meets industry standards.

7.What is the process for return or replacement of AOW125A60?

All AOW125A60 units undergo pre-shipment inspection (PSI). If there is an issue with AOW125A60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOW125A60 part is unused and in its original packaging.

Return procedure for AOW125A60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…