Alpha & Omega Semiconductor Inc. AOWF296

Overview

AOWF296 from Alpha & Omega Semiconductor is a 100V N-Channel enhancement-mode MOSFET using Trench Power AlphaSGT™ technology, optimized for fast-switching synchronous rectification in DC/DC and AC/DC converters. It delivers R_DS(ON) < 9.7 mΩ at V_GS = 10 V, 12.2 mΩ at V_GS = 6 V, and supports continuous drain current up to 18 A at T_C = 100 °C in TO-262F package.

For engineers reviewing the AOWF296 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 37–52 nC), fast switching performance (t_r = 8.5 ns, t_f = 4 ns), and robust thermal design with R_θJC = 4.8 °C/W - critical for high-efficiency power conversion designs.

Technical Context

The AOWF296 employs AlphaSGT™ trench-gate superjunction structure to achieve low R_DS(ON) and low Q_g simultaneously. Its gate threshold voltage (2.3–3.4 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers, while the body diode exhibits t_rr = 35 ns and Q_rr = 210 nC under IF = 20 A, di/dt = 500 A/µs conditions.

This device is characterized for unclamped inductive switching (UIS) and 100% tested for gate resistance (R_g = 0.25–0.85 Ω) and avalanche energy (E_AS = 46.5 mJ). Its SOA is defined by junction-to-case thermal limits (R_θJC = 4.8 °C/W) and maximum T_J = 150 °C, supporting stable operation in industrial motor drives and high-frequency SMPS.

Key Specifications

Pinout & Package

Package: TO-262F (Isolated Tab), surface-mount compatible with through-hole footprint; thermally enhanced variant of TO-262 with electrically isolated drain tab for simplified heatsinking and improved creepage/clearance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STP110N10F7 and IRF540NPBF, the AOWF296 offers superior switching efficiency due to lower Q_g and Crss, plus electrical isolation in TO-262F - making it optimal for high-density, high-reliability power stages where thermal management and layout simplicity are critical.

Availability

AOWF296 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC/DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOWF296 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.

The AOWF296 belongs to AOS's AlphaSGT™ family, engineered specifically for high-frequency, high-efficiency power conversion applications demanding low R_DS(ON), low Q_g, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current rating for AOWF296 at 100 °C case temperature?

The AOWF296 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper heatsinking with R_θJC = 4.8 °C/W. At T_C = 25 °C, the rating increases to 80 A, but practical operation is constrained by thermal design and PCB layout.

Does AOWF296 have an electrically isolated drain tab?

Yes, the AOWF296 uses the TO-262F package, which features an electrically isolated drain tab. Unlike standard TO-262, this isolation eliminates the need for insulating pads or washers when mounting directly to a heatsink, simplifying mechanical assembly and improving thermal reliability in high-voltage applications.

How does the body diode performance of AOWF296 compare to standard silicon diodes in synchronous rectification?

The AOWF296 body diode has t_rr = 35 ns and Q_rr = 210 nC at I_F = 20 A and di/dt = 500 A/µs. This is significantly faster and lower-loss than discrete 100 V Schottky diodes in the same current class, reducing reverse recovery loss and enabling higher-frequency operation without shoot-through risk in synchronous buck converters.

Is AOWF296 suitable for gate-driving with 5 V logic-level signals?

Yes, the AOWF296 has a gate threshold voltage V_GS(th) of 2.3–3.4 V and achieves R_DS(ON) < 12.2 mΩ at V_GS = 6 V. It is fully compatible with 5 V microcontroller GPIO or dedicated 5 V gate drivers, delivering low conduction loss without requiring level-shifting circuitry.

What is the avalanche energy rating of AOWF296, and how is it validated?

The AOWF296 is rated for E_AS = 46.5 mJ under unclamped inductive switching (UIS) test conditions (L = 0.1 mH, I_AS = 40 A). Every unit undergoes 100% UIS testing per JEDEC JESD24-11, ensuring robustness against transient overcurrent events in real-world power circuits.