Alpha & Omega Semiconductor Inc. AOY423

Overview

AOY423 from Alpha & Omega Semiconductor is a -30V, -70A P-channel MOSFET in TO-251B (IPAK short lead) package, featuring R_DS(ON) < 6.7 mΩ at V_GS = -20V and < 8.5 mΩ at V_GS = -10V, 100% UIS tested, and optimized for high-current load switching in industrial power supplies and motor control circuits.

For engineers reviewing the AOY423 datasheet, pinout, applications, or equivalent options, key selection criteria include its -30V V_DS, -70A continuous drain rating at T_C = 25°C, low gate charge (Q_g = 45–65 nC), 1.6°C/W junction-to-case thermal resistance, and TO-251B package compatibility with high-power PCB layouts requiring thermal relief.

Technical Context

The AOY423 employs AlphaSGT™ trench technology to achieve low R_DS(ON) and low gate resistance (R_g = 1.5–6.0 Ω), enabling fast switching with t_D(on) = 13 ns and t_D(off) = 35 ns. Its body diode exhibits V_SD = -0.7 to -1.0 V and Q_rr = 30 nC at I_F = -20 A, dI/dt = 500 A/μs.

Thermally, it supports T_J = -55 to +175°C operation, with P_D = 90 W at T_C = 25°C and R_θJC = 1.6°C/W. The device is 100% avalanche energy tested (E_AS = 125 mJ) and rated for repetitive unclamped inductive switching.

Key Specifications

Pinout & Package

AOY423 is housed in TO-251B (IPAK short lead) package - a surface-mount variant of IPAK with shortened leads for improved mechanical stability and thermal transfer via exposed drain pad. The package features gull-wing leads and an internally connected drain tab for PCB thermal relief.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF4905PbF and Si2301DS-T1-E3, the AOY423 delivers 3× lower R_DS(ON) than IRF4905PbF and 17× higher current rating than Si2301DS-T1-E3, making it uniquely suited for compact, high-efficiency 50–70A industrial switching where thermal margin and transient robustness are non-negotiable.

Availability

AOY423 is available at Aetrix Electronics and suitable for industrial power supplies, motor control systems, and automotive body electronics requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified wafer lots.

Supply support for AOY423 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOY423 belongs to AOS' AlphaSGT™ P-channel MOSFET product line, engineered for high-current, high-reliability switching in negative-rail configurations where low R_DS(ON), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for AOY423 at 100°C case temperature?

The AOY423 supports -67 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-251B package and must be validated with actual PCB thermal design. The AOY423 datasheet confirms this value under steady-state conditions with proper heatsinking.

Does AOY423 have a specified gate threshold voltage range?

Yes, the AOY423 has a gate threshold voltage (V_GS(th)) range of -1.5 V to -3.5 V at I_D = -250 μA, measured at T_J = 25°C. This range ensures consistent turn-on behavior across process variation and supports reliable operation with -5V gate drive in high-side switch configurations using the AOY423.

Is AOY423 suitable for use in synchronous rectification topologies?

Yes, the AOY423 is suitable for synchronous rectification due to its low R_DS(ON) (<6.7 mΩ), fast switching parameters (t_r = 23 ns, t_f = 26 ns), and well-characterized body diode (V_SD = -0.7 to -1.0 V, Q_rr = 30 nC). These traits minimize conduction and recovery losses when used as a controlled rectifier in DC-DC converters with the AOY423.

What is the avalanche energy rating for AOY423, and how is it tested?

The AOY423 is rated for 125 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, verified by 100% UIS (Unclamped Inductive Switching) testing per JEDEC standards. This rating applies to the AOY423 in TO-251B package and confirms its ability to absorb inductive turn-off energy without failure during transient overloads.

How does the thermal resistance of AOY423 compare between junction-to-case and junction-to-ambient?

The AOY423 has R_θJC = 1.6°C/W and R_θJA = 50°C/W (measured on 1 in² FR-4, 2 oz Cu). The 31× difference highlights that effective heatsinking is mandatory: junction temperature rise is dominated by case-to-heatsink interface, not ambient convection. For thermal design, the AOY423's R_θJC value must be combined with heatsink resistance to predict T_J.