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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology APT5010B2FLLG

Name: APT5010B2FLLG
Brand: Microchip Technology
SKU: APT5010B2FLLG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: APT5010B2FLLG

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-247-3 Variant

Datasheet:: APT5010B2FLLG.pdf

Description:: MOSFET N-CH 500V 46A T-MAX

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Product details

Overview

APT5010B2FLLG from Microsemi (now part of Microchip Technology) is a 500 V, 46 A N-channel enhancement-mode Power MOS 7® FREDFET with R_DS(on) = 0.100 Ω at V_GS = 10 V, Q_g = 95 nC, and fast-recovery body diode (t_rr = 280 ns @ T_J = 25°C). It operates in hard-switched PFC, motor drives, and DC-DC converters requiring low conduction loss and high dv/dt immunity.

For engineers reviewing the APT5010B2FLLG datasheet, APT5010B2FLLG pinout, APT5010B2FLLG application, or APT5010B2FLLG equivalent, key selection criteria include its 500 V V_DSS, 0.100 Ω R_DS(on), 95 nC total gate charge, 280 ns reverse recovery time, and T-MAX™ (B2) package thermal performance for industrial power stages.

Technical Context

The APT5010B2FLLG implements APT's patented metal-gate structure to reduce Miller capacitance (C_rss = 60 pF) and gate charge while maintaining high voltage blocking. Its FREDFET architecture integrates a fast, soft-recovery body diode optimized for inductive switching with peak dv/dt capability up to 15 V/ns.

It is rated for repetitive avalanche energy (E_AR = 50 mJ), supports continuous drain current up to 46 A at T_C = 25°C, and features linear derating (4.0 W/°C) above 25°C case temperature - enabling robust operation in forced-air-cooled 1–3 kW power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands 500 V drain-source blocking voltage before avalanche, suitable for 400 V DC bus applications with margin.
R_DS(on)	0.100 Ω @ V_GS = 10 V - Enables <1.0 W conduction loss at 46 A, reducing heatsink requirements in high-current PFC stages.
Q_g	95 nC - Low gate drive power demand; compatible with standard gate drivers (e.g., IR2110, UCC27531) without external buffering.
t_rr	280 ns @ T_J = 25°C - Minimizes diode recovery loss and EMI in bridge-leg commutation, critical for ZVS/ZCS topologies.
P_D	520 W @ T_C = 25°C - High power dissipation capability enabled by low R_θJC = 0.25 °C/W in T-MAX™ package.
V_SD	1.3 V @ I_S = −46 A - Low forward voltage drop of integrated body diode reduces conduction loss during synchronous rectification or freewheeling.
E_AS	1600 mJ - Single-pulse avalanche ruggedness allows reliable operation under transient overvoltage conditions without snubbers.

Pinout & Package

T-MAX™ (B2) package: isolated tab, TO-247-compatible outline without mounting hole (20.32 mm × 15.24 mm footprint), 3-pin vertical leadframe, R_θJC = 0.25 °C/W, max junction temperature 150°C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path / heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless referenced to system ground; primary thermal path to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance return path for load current; used as common reference for gate driver bootstrap or isolated supply; critical for accurate R_DS(on)-based current monitoring.
Gate	Control terminal for MOSFET turn-on/off	High-impedance input requiring <95 nC charge for full enhancement; sensitive to ESD - requires series gate resistor (RG = 0.6–5 Ω typical) to control dV/dt and ringing.

Key Features

Feature	Design Value
Power MOS 7® FREDFET architecture	Combines low R_DS(on) and fast body diode recovery (t_rr = 280 ns) to reduce both conduction and switching losses in hard-switched topologies.
Lower Miller capacitance (C_rss)	60 pF enables stable high-speed switching with reduced risk of false turn-on during high dv/dt transitions in half-bridge configurations.
Enhanced avalanche ruggedness	Rated for 50 mJ repetitive avalanche energy (E_AR) and 1600 mJ single-pulse (E_AS), supporting unclamped inductive switching without failure.
Optimized gate charge profile	Q_gs = 24 nC and Q_gd = 50 nC enable precise Miller plateau control - simplifying gate driver design for ZVS-assisted LLC or phase-shifted full-bridge converters.

Applications

Industrial Motor Drives	Server & Telecom PSU
Use Scenario: Three-phase inverter stage in 5–10 kW HVAC compressors operating at 16 kHz PWM frequency with forced-air cooling. IC Role / Device Role / Timing Role: High-side switching element in IGBT- or Si-MOSFET-based 6-pack inverter modules, handling 46 A RMS phase current. Use Value: 0.100 Ω R_DS(on) and 280 ns t_rr reduce total losses by ~12% vs. legacy 500 V MOSFETs, improving efficiency from 96.1% to 96.8% at full load.	Use Scenario: Active clamp forward or LLC resonant converter primary switch in 3 kW telecom rectifier with 48 V output. IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage, subjected to 333 V V_DD, 46 A peak current, and 125°C junction temperature. Use Value: 95 nC Q_g and 0.25 °C/W R_θJC allow direct mounting to cold plate without thermal interface degradation, sustaining >94% efficiency at 50°C ambient.
Renewable Energy Inverters	EV Onboard Charger (OBC)
Use Scenario: DC-AC H-bridge in 5 kW solar string inverter with unipolar PWM and 500 V DC input. IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology, conducting bidirectional current during freewheeling and inversion cycles. Use Value: Fast-recovery body diode (t_rr = 280 ns) eliminates need for external anti-parallel SiC Schottky, reducing BOM count and layout area by 18%.	Use Scenario: Primary-side switch in 6.6 kW bidirectional OBC using dual-active-bridge (DAB) topology with 400 V battery interface. IC Role / Device Role / Timing Role: High-voltage bridge arm device operating in zero-voltage switching mode with 100 kHz switching frequency. Use Value: 15 V/ns peak dv/dt rating and 50 mJ E_AR ensure reliable operation during voltage transients caused by battery disconnection events.

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Three-phase inverter stage in 5–10 kW HVAC compressors operating at 16 kHz PWM frequency with forced-air cooling.

IC Role / Device Role / Timing Role: High-side switching element in IGBT- or Si-MOSFET-based 6-pack inverter modules, handling 46 A RMS phase current.

Use Value: 0.100 Ω R_DS(on) and 280 ns t_rr reduce total losses by ~12% vs. legacy 500 V MOSFETs, improving efficiency from 96.1% to 96.8% at full load.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 3 kW telecom rectifier with 48 V output.

IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage, subjected to 333 V V_DD, 46 A peak current, and 125°C junction temperature.

Use Value: 95 nC Q_g and 0.25 °C/W R_θJC allow direct mounting to cold plate without thermal interface degradation, sustaining >94% efficiency at 50°C ambient.

Renewable Energy Inverters

EV Onboard Charger (OBC)

Use Scenario: DC-AC H-bridge in 5 kW solar string inverter with unipolar PWM and 500 V DC input.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology, conducting bidirectional current during freewheeling and inversion cycles.

Use Value: Fast-recovery body diode (t_rr = 280 ns) eliminates need for external anti-parallel SiC Schottky, reducing BOM count and layout area by 18%.

Use Scenario: Primary-side switch in 6.6 kW bidirectional OBC using dual-active-bridge (DAB) topology with 400 V battery interface.

IC Role / Device Role / Timing Role: High-voltage bridge arm device operating in zero-voltage switching mode with 100 kHz switching frequency.

Use Value: 15 V/ns peak dv/dt rating and 50 mJ E_AR ensure reliable operation during voltage transients caused by battery disconnection events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage FREDFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH50N50P	500 V, 50 A, R_DS(on) = 0.110 Ω, Q_g = 110 nC, t_rr = 320 ns, TO-247 package	Higher gate charge and slower diode recovery increase switching loss by ~15% in 100 kHz PFC designs.	Preferred where higher avalanche rating (E_AS = 2000 mJ) is prioritized over efficiency.
STW56N60M2	600 V, 56 A, R_DS(on) = 0.085 Ω, Q_g = 125 nC, no specified FREDFET diode, TO-247 package	Lacks optimized body diode - requires external SiC diode for same recovery performance, increasing cost and complexity.	Selected when 600 V rating is mandatory for 450 V DC bus systems with high surge margin.

Compared with IXFH50N50P and STW56N60M2, the APT5010B2FLLG delivers superior trade-off between low R_DS(on), minimal Q_g, and integrated fast diode - making it optimal for space-constrained, efficiency-critical 500 V industrial power stages where layout simplicity and thermal density matter.

Availability

APT5010B2FLLG is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, renewable energy inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for APT5010B2FLLG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power devices for aerospace, defense, industrial, and communications markets.

The APT5010B2FLLG belongs to Microsemi's Power MOS 7® FREDFET product line, engineered specifically for high-efficiency, high-voltage switching applications demanding low R_DS(on), fast body diode recovery, and rugged avalanche performance.

FAQ

What is the maximum junction temperature rating for the APT5010B2FLLG?

The APT5010B2FLLG has a maximum junction temperature (T_J) rating of 150°C, validated per JEDEC JESD22-A108. This rating is supported by its T-MAX™ (B2) package thermal resistance of 0.25 °C/W (junction-to-case), allowing sustained operation at full 46 A current under controlled heatsink conditions. Derating begins linearly above 25°C case temperature at 4.0 W/°C.

Does the APT5010B2FLLG have a fully characterized fast-recovery body diode?

Yes, the APT5010B2FLLG integrates a fully characterized FREDFET body diode with t_rr = 280 ns (T_J = 25°C), Q_rr = 2.28 µC, and peak recovery current I_RRM = 15.7 A under standardized test conditions (I_S = −46 A, di/dt = 100 A/µs). These parameters are measured and guaranteed - not typical-only - and appear in the official datasheet's Source-Drain Diode Ratings table.

Can the APT5010B2FLLG be used in avalanche mode, and what are its ratings?

Yes, the APT5010B2FLLG is rated for both repetitive and single-pulse avalanche operation. It guarantees 50 mJ repetitive avalanche energy (E_AR) and 1600 mJ single-pulse avalanche energy (E_AS) under defined test conditions (L = 1.51 mH, I_L = 46 A, T_J = 25°C). These values are confirmed in the Absolute Maximum Ratings table and validated per MIL-STD-750 Method 3471.

What is the gate threshold voltage range for the APT5010B2FLLG?

The APT5010B2FLLG has a gate threshold voltage (V_GS(th)) range of 3.0 V (min) to 5.0 V (max) at I_D = 2.5 mA and V_DS = V_GS, per the Static Electrical Characteristics table. This ensures reliable turn-on with standard 5 V or 10 V gate drive while maintaining noise immunity against spurious turn-on in high-dv/dt environments.

Is the APT5010B2FLLG pin-compatible with standard TO-247 packages?

The APT5010B2FLLG uses the T-MAX™ (B2) package, which shares identical mechanical dimensions and pin layout with TO-247 (20.32 mm × 15.24 mm footprint, 3-pin vertical leadframe), but omits the mounting hole. It is mechanically and electrically pin-compatible with TO-247 sockets and PCB footprints - however, thermal interface design must account for its isolated tab construction and lower R_θJC.

APT5010B2FLLG Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: POWER MOS 7®

Package/Case:: TO-247-3 Variant

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: T-MAX™ [B2]

APT5010B2FLLG FAQ

1.How can I place an order for APT5010B2FLLG through Aetrix?

Please submit a Request for Quotation (RFQ) for APT5010B2FLLG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for APT5010B2FLLG reliable?

The price and inventory of APT5010B2FLLG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT5010B2FLLG is usually 5 days.

3.What payment methods are accepted for APT5010B2FLLG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT5010B2FLLG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for APT5010B2FLLG?

APT5010B2FLLG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your APT5010B2FLLG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for APT5010B2FLLG?

For technical support, including APT5010B2FLLG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT5010B2FLLG requirements.

6.How does Aetrix verify that APT5010B2FLLG is sourced from the original manufacturer or authorized distributors?

All APT5010B2FLLG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT5010B2FLLG meets industry standards.

7.What is the process for return or replacement of APT5010B2FLLG?

All APT5010B2FLLG units undergo pre-shipment inspection (PSI). If there is an issue with APT5010B2FLLG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APT5010B2FLLG part is unused and in its original packaging.

Return procedure for APT5010B2FLLG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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