Microchip Technology APT5010LFLLG

Overview

APT5010LFLLG from Microsemi (now part of Microchip Technology) is a 500 V, 46 A N-channel enhancement-mode Power MOS 7® FREDFET with R_DS(on) = 0.100 Ω at V_GS = 10 V and Q_g = 95 nC, optimized for high-efficiency hard-switched and resonant power converters requiring fast body diode recovery. It operates in TO-264 (L) package with integrated fast-recovery body diode (t_rr = 280 ns @ T_J = 25°C).

For engineers reviewing the APT5010LFLLG datasheet, APT5010LFLLG pinout, APT5010LFLLG application, or APT5010LFLLG equivalent, key selection criteria include its low gate charge (95 nC), low Miller capacitance (60 pF), 1.3 V body diode forward voltage at −46 A, 15 V/ns peak dv/dt immunity, and suitability for PFC, LLC resonant, and industrial SMPS designs where reduced switching loss and diode softness are critical.

Technical Context

This device belongs to the Power MOS 7® FREDFET family, featuring APT's patented metal-gate structure enabling lower conduction and switching losses simultaneously. Its design integrates a fast, soft-recovery intrinsic body diode with t_rr = 280 ns (T_J = 25°C) and Q_rr = 2.28 µC - significantly lower than standard MOSFETs - reducing EMI and diode-related switching stress.

The APT5010LFLLG uses a single-ended, vertical DMOS architecture with optimized channel geometry and field plate termination for stable 500 V breakdown. Gate threshold voltage is specified at 3–5 V, supporting standard 10–15 V gate drive, while its R_DS(on) exhibits <1.2× variation from −55°C to +150°C, ensuring predictable thermal performance in wide-temperature industrial operation.

Key Specifications

Pinout & Package

APT5010LFLLG is housed in a TO-264 (L) package - identical in outline to TO-247 but without mounting hole - with isolated tab (Drain-connected), 3-terminal configuration, and 0.25°C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage FREDFET applications.

Compared with IXTH50N50L and STW56N60M2, the APT5010LFLLG offers the lowest combined Q_g/C_rss ratio and fastest body diode among 500 V 46 A devices, making it uniquely suited for high-frequency, high-efficiency resonant and PFC applications where diode softness and gate drive efficiency are co-critical.

Availability

APT5010LFLLG is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, renewable energy inverters, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for APT5010LFLLG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power devices for aerospace, defense, industrial, and communications markets.

The Power MOS 7® FREDFET product line was developed to address simultaneous conduction and switching loss reduction in high-voltage power conversion, targeting PFC, resonant LLC, and motor drive applications demanding soft-recovery capability and robust dv/dt immunity.

FAQ

What is the maximum continuous drain current rating for APT5010LFLLG?

The APT5010LFLLG has a maximum continuous drain current (I_D) of 46 A at case temperature (T_C) = 25°C. At elevated case temperatures, this rating decreases linearly per the 4.0 W/°C derating factor - for example, at T_C = 100°C, the usable I_D drops to approximately 27 A. This rating assumes proper heatsinking and adherence to the SOA curve in Figure 10 of the official APT5010LFLLG datasheet.

Does APT5010LFLLG have a fast-recovery body diode, and what are its key parameters?

Yes, the APT5010LFLLG integrates a fast-recovery, soft-switching body diode as part of its FREDFET structure. Key diode parameters include: forward voltage V_SD = 1.3 V at I_S = −46 A, reverse recovery time t_rr = 280 ns (T_J = 25°C), reverse recovery charge Q_rr = 2.28 µC, and peak dv/dt capability of 15 V/ns. These values are measured under standardized conditions (I_S = −46 A, di/dt = 100 A/µs) and confirm suitability for hard-commutated bridge topologies.

What package type does APT5010LFLLG use, and is the drain electrically connected to the case?

The APT5010LFLLG uses the TO-264 (L) package - a variant of TO-247 without the mounting hole - with dimensions matching industry-standard TO-247 footprints. The metal tab is the Drain terminal and is electrically connected to the internal die's drain region. Therefore, electrical isolation (e.g., insulating pad and shoulder washer) is mandatory when mounting to a grounded heatsink to prevent short-circuiting.

What is the gate threshold voltage range for APT5010LFLLG, and how does it affect drive requirements?

The APT5010LFLLG has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V (measured at I_D = 2.5 mA). This ensures reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise. For robust operation, a minimum V_GS of 10 V is recommended to achieve rated R_DS(on), and gate drive must sustain ≥±30 V transient rating to avoid damage during switching transients.

Can APT5010LFLLG be used in place of APT5010B2FLL, and what is the difference?

No - APT5010LFLLG and APT5010B2FLL are distinct variants: APT5010B2FLL uses the T-MAX™ (B2) package (TO-247 outline with mounting hole), while APT5010LFLLG uses the TO-264 (L) package (TO-247 outline without mounting hole). Though electrically identical in ratings and characteristics, their mechanical footprints differ. PCB layout must match the specific package; direct substitution requires board revision. Both share identical APT5010B2FLL_LFLL datasheet revision.