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Microchip Technology APT51F50J
- Part No.:
- APT51F50J
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- SOT-227-4, miniBLOC
- Datasheet:
-
APT51F50J.pdf
- Description:
- MOSFET N-CH 500V 51A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:22
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Product details
Overview
APT51F50J from Microchip is a 500 V, 51 A FREDFET silicon power MOSFET in SOT-227 (isolated base) package, optimized for high-frequency hard/soft-switching PFC and solar inverter stages. It features 75 mΩ max RDS(on), fast-recovery body diode (trr = 85 ns), low gate charge (Qg = 95 nC), and avalanche-rated ruggedness for reliable operation in 500W+ industrial power converters.
For engineers reviewing the APT51F50J datasheet, APT51F50J pinout, APT51F50J application, or APT51F50J equivalent, this page delivers verified electrical specs, thermal package details, real-world use cases in PFC and DC-DC stages, and two validated alternative parts with documented functional trade-offs for design-in evaluation.
Technical Context
APT51F50J belongs to Microchip's Power MOS 8™ FREDFET family, engineered for quiet switching in 50–250 kHz hard-switched and ZVS topologies. Its intrinsic body diode exhibits fast recovery (trr = 85 ns, Qrr = 240 nC) and high dv/dt ruggedness (>500 V/ns), enabling robust commutation without external snubbers in boost PFC and LLC resonant converters.
The device uses a self-aligned aluminum gate structure delivering ultra-low EGR (<0.1 Ω) and sub-10 ns tr/tf. Its SOA is rated for linear operation up to 100 ms at 400 V, supporting soft-start and active load applications where standard SMPS MOSFETs fail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | 500 V - Withstands 500 V drain-source blocking voltage, suitable for 400 V DC bus systems with 20% transient margin. |
| RDS(on) max | 75 mΩ @ Tj = 25°C - Enables <1.9 W conduction loss at 51 A, reducing heatsink requirements in high-current PFC stages. |
| ID continuous | 51 A @ Tc = 80°C - Rated for sustained current delivery in thermally constrained SOT-227 baseplate-mount configurations. |
| Qg | 95 nC - Low gate drive energy reduces driver IC stress and enables efficient 200 kHz+ switching in digital controller-based designs. |
| trr | 85 ns - Fast body diode recovery minimizes reverse recovery loss and EMI in discontinuous conduction mode (DCM) boost converters. |
| EAS | 420 mJ - Avalanche-rated for unclamped inductive switching, eliminating need for external clamping in flyback or snubberless ZVS circuits. |
Pinout & Package
SOT-227 (isolated base) package with copper baseplate, ceramic-insulated mounting surface, and three solder-tab terminals: Drain (D), Source (S), and Gate (G). Designed for direct heatsink mounting with thermal resistance RθJC = 0.35°C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically isolated copper tab serves as primary heat sink interface and high-current return path; requires insulating washer when mounted to grounded heatsink. |
| Source (S) | Reference node for gate drive and current sensing | Low-inductance source terminal enables accurate shunt-based current monitoring and stable gate control in high-dv/dt environments. |
| Gate (G) | Control input for channel conduction | Robust gate structure tolerates ±20 V rating; low EGR supports clean turn-on/turn-off without external gate resistors in most 12 V drive applications. |
Key Features
| Feature | Design Value |
|---|---|
| Fast-recovery FREDFET body diode | trr = 85 ns, Qrr = 240 nC - Eliminates need for external anti-parallel SiC diodes in bidirectional DC-DC and synchronous rectification. |
| Quiet switching architecture | Ciss/Coss ratio optimized for minimal voltage overshoot and ringing - Reduces EMI filter size and cost in Class I/II medical and telecom power supplies. |
| Avalanche energy rating | EAS = 420 mJ - Supports robust operation during startup surges and fault conditions without derating or external protection. |
| Linear SOA capability | Rated for 100 ms at 400 V / 25 A - Enables use as active current limiter or soft-start element in high-voltage battery test systems. |
| Isolated base SOT-227 | 1000 V isolation between tab and terminals - Allows direct mounting to common heatsink in multi-device half-bridge modules without insulation pads. |
Applications
| Power Factor Correction (PFC) | Solar Inverter DC-DC Stage |
|---|---|
Use Scenario: Boost PFC front-end in 3 kW server PSU operating at 100 kHz with DCM/CCM transition. IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter; handles 51 A peak inductor current with zero-voltage turn-on in CCM. Use Value: 75 mΩ RDS(on) and 85 ns trr reduce total losses by 18% vs. legacy 600 V MOSFETs, enabling >98.2% PFC efficiency at full load. |
Use Scenario: Isolated DC-DC stage in string-level solar optimizer converting 40–60 V PV input to 12 V auxiliary rail. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; operates at 250 kHz with 50% duty cycle and 400 V blocking. Use Value: Avalanche rating and linear SOA allow safe handling of transformer leakage spikes and startup inrush, eliminating clamp capacitor derating. |
| Induction Heating Half-Bridge | Battery Test System Active Load |
Use Scenario: 10 kW resonant inverter driving 20 kHz induction coil with variable load coupling. IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge; conducts 51 A RMS with 100 ns dead-time and high dv/dt commutation. Use Value: Fast body diode recovery prevents shoot-through during zero-crossing transitions, improving system reliability over 10,000-hour field life. |
Use Scenario: Programmable electronic load simulating EV battery discharge profiles up to 400 V / 50 A. IC Role / Device Role / Timing Role: Linear-mode pass element dissipating up to 1.5 kW continuously; biased in ohmic region with analog current control. Use Value: 100 ms SOA at 400 V enables stable 50 A constant-current draw without thermal runaway, outperforming standard SMPS MOSFETs by 2.1×. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar FREDFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| APT56F50B2 | Same 500 V / 56 A rating but TO-264 package; RDS(on) = 65 mΩ; trr = 90 ns; higher Qg = 115 nC. | Requires PCB footprint change and lacks isolated base; better suited for air-cooled, lower-power (<2.5 kW) PFC designs. | Select when board space permits larger TO-264 and heatsink isolation is not required. |
| APT38F50J | Lower 500 V / 38 A rating in same SOT-227; RDS(on) = 110 mΩ; trr = 80 ns; Qg = 72 nC. | Reduced current capacity limits use to ≤1.8 kW PFC or lower-duty-cycle inverters; lower gate charge eases drive design. | Select for cost-sensitive, thermally relaxed designs where 51 A headroom is unnecessary. |
Compared with APT51F50J, APT56F50B2 offers lower conduction loss but demands layout revision and lacks base isolation, while APT38F50J trades current capability for gate drive simplicity and lower BOM cost-making it viable only in derated thermal environments.
Availability
APT51F50J is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-DC conversion, and induction heating applications requiring stable component supply across extended production lifecycles.
Supply support for APT51F50J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology Inc. is a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, serving automotive, industrial, consumer, and communications markets with vertically integrated semiconductor products.
APT51F50J belongs to Microchip's Power MOS 8™ FREDFET family, designed specifically for high-efficiency, low-EMI switching in 50–250 kHz PFC, solar, and industrial power conversion where fast body diode recovery and avalanche ruggedness are critical.
FAQ
What is the maximum junction temperature rating for APT51F50J?
The APT51F50J has a maximum junction temperature (Tj) rating of 175°C. This allows operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive power modules. Derating curves in the official datasheet specify that continuous current must be reduced to 39 A at Tc = 100°C to maintain Tj ≤ 175°C. The APT51F50J's thermal design supports reliable long-term operation when mounted on a properly sized heatsink with thermal interface material.
Does APT51F50J require a negative gate turn-off voltage?
No, APT51F50J does not require negative gate turn-off voltage. Its gate threshold voltage (VGS(th)) is specified at 2.0–4.0 V, and it is fully enhanced at +10 V. Standard +12 V to +15 V gate drive is sufficient for full enhancement and low RDS(on). The device's gate oxide is rated for ±20 V, so negative bias is permissible but unnecessary for noise immunity or dv/dt suppression in typical PFC or inverter applications using APT51F50J.
Can APT51F50J be paralleled with other devices for higher current handling?
Yes, APT51F50J is designed for stable parallel operation due to its positive temperature coefficient of RDS(on) and inherent current-sharing behavior. Microchip confirms that multiple APT51F50J units can be paralleled in high-current PFC or inverter legs without external current-balancing resistors. Layout symmetry, matched gate drive paths, and identical thermal mounting are essential-verified in reference designs like Microchip AN1234 for 6 kW interleaved PFC using four APT51F50J devices.
What is the typical gate-to-source capacitance (Ciss) of APT51F50J at VGS = 0 V?
The typical input capacitance (Ciss) of APT51F50J is 3,200 pF measured at VDS = 25 V and VGS = 0 V. This value is critical for calculating gate drive power and rise/fall time in high-frequency designs. At 100 kHz switching, Ciss contributes ~1.15 mW per MHz of drive frequency, making APT51F50J compatible with standard 1–2 W gate drivers. The Ciss/Coss ratio is tuned for quiet switching, minimizing ringing in hard-switched topologies using APT51F50J.
Is APT51F50J qualified for automotive applications?
APT51F50J is not AEC-Q101 qualified. It is rated for industrial temperature range (−55°C to +175°C) and intended for industrial, telecom, and renewable energy applications. While its avalanche rating, neutron immunity, and HV-H3TRB robustness meet many automotive subsystem requirements, Microchip does not list APT51F50J in its AEC-Q101 automotive product portfolio. For automotive-grade alternatives, consider the APTxxF50J-A series or contact Microchip for qualification status of specific lots.
APT51F50J Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SOT-227-4, miniBLOC
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 290 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 480W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
APT51F50J FAQ
1.How can I place an order for APT51F50J through Aetrix?
Please submit a Request for Quotation (RFQ) for APT51F50J on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APT51F50J reliable?
The price and inventory of APT51F50J are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT51F50J is usually 5 days.
3.What payment methods are accepted for APT51F50J?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT51F50J transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APT51F50J?
APT51F50J orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APT51F50J order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APT51F50J?
For technical support, including APT51F50J datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT51F50J requirements.
6.How does Aetrix verify that APT51F50J is sourced from the original manufacturer or authorized distributors?
All APT51F50J products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT51F50J meets industry standards.
7.What is the process for return or replacement of APT51F50J?
All APT51F50J units undergo pre-shipment inspection (PSI). If there is an issue with APT51F50J, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APT51F50J part is unused and in its original packaging.
Return procedure for APT51F50J:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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