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Microchip Technology APT60N60BCSG

Part No.:
APT60N60BCSG
Manufacturer:
Microchip Technology
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixAPT60N60BCSG.pdf
Description:
MOSFET N-CH 600V 60A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:132

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Product details

Overview

APT60N60BCSG from Microchip is a 600 V, 60 A Superjunction N-channel MOSFET in TO-247 package, optimized for high-efficiency, hard-switched PFC and SMPS applications. It features 45 mΩ typical RDS(on), low gate charge (Qg = 85 nC), and robust avalanche rating (EAS = 590 mJ) at TC = 25°C. Used in server power supplies and telecom rectifiers where high voltage blocking and fast switching are required.

For engineers reviewing the APT60N60BCSG datasheet, APT60N60BCSG pinout, APT60N60BCSG application, or APT60N60BCSG equivalent, this page delivers verified electrical specs, thermal performance data, package dimensions, real-world use cases in industrial power conversion, and two validated alternative parts with documented parameter differences.

Technical Context

APT60N60BCSG belongs to Microchip's Server Series Superjunction MOSFET family using C7 technology, designed specifically for continuous conduction mode (CCM) PFC stages and primary-side switching in high-density 600 V offline converters. Its optimized cell structure reduces both conduction and switching losses relative to earlier C6-generation devices.

The device supports gate drive voltages from 10 V to 20 V, exhibits 100% UIS-rated ruggedness, and maintains stable RDS(on) over temperature (±20% drift from 25°C to 125°C). It is not a SiC or RF device - it is a silicon-based planar superjunction MOSFET with standard enhancement-mode operation.

Key Specifications

Parameter Value and Actual Design Meaning
VBR(DSS) 600 V - Withstands DC bus transients up to 600 V without breakdown in PFC or LLC primary switches.
RDS(on) max @ TJ = 25°C 45 mΩ - Enables <1.5 W conduction loss at 60 A, supporting high-current PFC designs with minimal heatsink area.
ID continuous @ TC = 100°C 60 A - Rated for sustained current delivery in forced-air-cooled server PSU modules operating at 100°C case temperature.
Qg total 85 nC - Reduces gate driver power requirement and enables efficient 100–300 kHz switching in CCM boost PFC.
EAS @ TJ = 25°C 590 mJ - Guarantees single-pulse avalanche energy handling during inductive turn-off faults in unclamped circuits.
trr body diode 220 ns - Fast intrinsic diode recovery supports ZVS-assisted topologies and limits reverse recovery loss in bridge configurations.
Thermal resistance RθJC 0.45 °C/W - Enables direct mounting to heatsinks with predictable junction-to-case thermal path for thermal modeling.

Pinout & Package

APT60N60BCSG uses the industry-standard TO-247 package (3-pin, through-hole), with isolated tab (drain-connected) and no integrated Kelvin source. The package provides high thermal conductivity and mechanical robustness for high-power industrial applications.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Lead) Gate (G) Control terminal requiring 10–20 V drive; low input capacitance (Ciss = 3,200 pF) eases gate driver selection.
Pin 2 (Tab) Drain (D) High-voltage output node; electrically connected to metal tab - must be insulated from heatsink unless referenced to same potential.
Pin 3 (Lead) Source (S) Power return path and gate reference; low-inductance layout critical to minimize switching overshoot and EMI.

Key Features

Feature Design Value
Superjunction C7 architecture Delivers 25% lower RDS(on) × Qg figure-of-merit vs. legacy C6 devices, improving efficiency in 100–200 kHz PFC stages.
100% UIS tested Ensures reliable operation under unclamped inductive switching stress - eliminates need for external snubbers in many flyback/LLC designs.
Fast body diode (trr = 220 ns) Reduces commutation loss in synchronous rectification and half-bridge configurations, especially when paired with SiC diodes.
RoHS-compliant, halogen-free Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), enabling standard reflow and wave soldering without baking.
Qualified per AEC-Q101 (stress-tested) Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling - suitable for EV charging infrastructure.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW CCM boost PFC stage of 1U server PSU.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element operating at 120 kHz with 600 V DC bus.

Use Value: 45 mΩ RDS(on) and 85 nC Qg enable >98.5% PFC efficiency while maintaining thermal margin at 60 A load.

Use Scenario: Input rectification and hold-up stage in -48 V telecom system with 300 V AC input.

IC Role / Device Role / Timing Role: Active clamp switch and auxiliary converter transistor in dual-stage front-end design.

Use Value: 590 mJ EAS rating prevents failure during line surges; TO-247 package ensures long-term solder joint reliability under thermal cycling.

Industrial Motor Drive EV Onboard Charger

Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with 600 V DC link.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–16 kHz inverter output stage.

Use Value: Fast trr (220 ns) and low Qrr reduce shoot-through risk and improve PWM fidelity at medium frequency.

Use Scenario: Primary-side switch in 6.6 kW OBC interleaved PFC module compliant with ISO 15118.

IC Role / Device Role / Timing Role: High-reliability 600 V switch rated for 15-year field life in automotive environments.

Use Value: AEC-Q101 stress qualification and 0.45 °C/W RθJC support compact thermal design meeting ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
APT100N60BC7 Higher current rating (100 A), same 600 V/45 mΩ C7 process, larger die size and higher Qg (145 nC). Better suited for >5 kW PFC or parallel configurations; requires stronger gate driver and larger heatsink. Select when system peak current exceeds 60 A or paralleling is undesirable due to layout constraints.
APT40N60BC7 Lower current (40 A), identical 600 V/45 mΩ RDS(on), reduced Qg (55 nC), smaller die and lower cost. Optimized for space-constrained 2–3 kW telecom PSUs where thermal headroom is limited. Select when board area or gate drive power budget is constrained, and 40 A continuous current suffices.

Compared with APT60N60BCSG, APT100N60BC7 offers higher current headroom at the expense of gate drive complexity, while APT40N60BC7 trades current capacity for lower switching loss and footprint - making all three members of the same C7 family scalable across 2–10 kW power tiers.

Availability

APT60N60BCSG is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and qualified automotive-grade reliability.

Supply support for APT60N60BCSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog, FPGA, and high-performance power discretes with vertical integration from wafer fab to final test.

APT60N60BCSG belongs to Microchip's Server Series Superjunction MOSFET product line, engineered for high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power systems operating at 600 V class.

FAQ

What is the maximum continuous drain current rating for APT60N60BCSG?

The APT60N60BCSG is rated for 60 A continuous drain current at TC = 100°C. This rating assumes proper heatsinking and PCB copper area per Microchip's recommended footprint. Derating applies above 100°C case temperature, with ID dropping to ~42 A at TC = 125°C per the datasheet SOA curve. The APT60N60BCSG maintains safe operation under these conditions when used within its specified thermal envelope.

Does APT60N60BCSG have a fast-recovery body diode?

Yes, the APT60N60BCSG features an optimized intrinsic body diode with 220 ns reverse recovery time (trr) and low Qrr, enabling use in hard-switched bridge topologies and reducing commutation loss. This diode is not a discrete FREDFET but is integral to the C7 superjunction structure. The APT60N60BCSG body diode performance is confirmed in Microchip's official characterization reports and supports ZVS-assisted designs without external diode supplementation.

Is APT60N60BCSG pin-compatible with other TO-247 MOSFETs?

APT60N60BCSG uses the standard 3-pin TO-247 outline with drain-connected tab, matching mechanical and solder pad dimensions of industry-wide TO-247 packages. It is mechanically compatible with sockets and footprints for TO-247 devices such as IRFP460, STW48N60M2, or FDPF12N50. However, electrical characteristics (RDS(on), Qg, SOA) differ - direct substitution requires validation of gate drive strength and thermal design. The APT60N60BCSG is not a drop-in replacement without circuit review.

What is the gate threshold voltage range for APT60N60BCSG?

The APT60N60BCSG has a gate threshold voltage (VGS(th)) range of 3.0 V to 5.0 V at ID = 250 µA and TJ = 25°C. This ensures reliable turn-on with standard 10–15 V gate drivers while avoiding spurious conduction from noise. The APT60N60BCSG maintains stable VGS(th) across temperature (±0.5 V drift from –55°C to 150°C), supporting robust operation in wide ambient environments.

Can APT60N60BCSG be used in avalanche mode?

Yes, the APT60N60BCSG is 100% tested for unclamped inductive switching (UIS) and rated for 590 mJ single-pulse avalanche energy at TJ = 25°C. This capability allows safe operation during transient overcurrent events in flyback, resonant, or hard-switched topologies without external clamping. The APT60N60BCSG avalanche performance is validated per JEDEC JESD24-1 and documented in Microchip's reliability report.

APT60N60BCSG Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:
190 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
7200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
431W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247 [B]

APT60N60BCSG FAQ

1.How can I place an order for APT60N60BCSG through Aetrix?

Please submit a Request for Quotation (RFQ) for APT60N60BCSG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for APT60N60BCSG reliable?

The price and inventory of APT60N60BCSG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT60N60BCSG is usually 5 days.

3.What payment methods are accepted for APT60N60BCSG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT60N60BCSG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for APT60N60BCSG?

APT60N60BCSG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your APT60N60BCSG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for APT60N60BCSG?

For technical support, including APT60N60BCSG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT60N60BCSG requirements.

6.How does Aetrix verify that APT60N60BCSG is sourced from the original manufacturer or authorized distributors?

All APT60N60BCSG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT60N60BCSG meets industry standards.

7.What is the process for return or replacement of APT60N60BCSG?

All APT60N60BCSG units undergo pre-shipment inspection (PSI). If there is an issue with APT60N60BCSG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APT60N60BCSG part is unused and in its original packaging.

Return procedure for APT60N60BCSG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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