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Infineon Technologies AUIRF7103QTR
- Part No.:
- AUIRF7103QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7103QTR.pdf
- Description:
- MOSFET 2N-CH 50V 3A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:8,335
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Product details
Overview
AUIRF7103QTR from Infineon is a dual-channel N-channel automotive-grade power MOSFET in SO-8 package, rated for 50 V VDS, 130 mΩ RDS(on) at VGS = 10 V and 3.0 A continuous drain current at TA = 25°C. It features logic-level gate drive (VGS(th) = 1.0–3.0 V), 175°C junction operation, and repetitive avalanche capability-designed for high-reliability DC motor control and load switching in engine management and body electronics.
For engineers reviewing the AUIRF7103QTR datasheet, AUIRF7103QTR pinout, AUIRF7103QTR application, or AUIRF7103QTR equivalent, key selection criteria include its dual-N-channel configuration, SO-8 thermal performance (RθJA = 62.5°C/W), 10 nC typical gate charge, 12 V/ns dv/dt rating, and automotive qualification per AEC-Q101.
Technical Context
This device integrates two independent N-channel HEXFET® MOSFETs in a single SO-8 package with shared drain leads (D1/D2) and isolated source/gate terminals (S1/G1, S2/G2). Its planar silicon process delivers low on-resistance per die area while maintaining robust unclamped inductive switching performance up to Tjmax = 175°C.
The dual topology supports synchronous half-bridge or independent high-side/low-side switching without cross-conduction risk. Gate threshold voltage (1.0–3.0 V) ensures compatibility with 3.3 V and 5 V microcontroller outputs, and dynamic parameters-including 5.1 ns turn-on delay, 2.3 ns fall time, and 255 pF input capacitance-are optimized for <1 MHz PWM operation in automotive power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 50 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with load dump margin. |
| RDS(on) max | 130 mΩ @ VGS = 10 V, ID = 3.0 A - Enables ≤0.39 W conduction loss at full rated current. |
| ID cont | 3.0 A @ TA = 25°C - Supports medium-power solenoid, fan, and lamp drivers without heatsinking. |
| Qg | 10 nC typ - Reduces gate driver power demand and enables fast 100 ns–1 µs switching transitions. |
| Tj max | 175°C - Meets under-hood temperature requirements for engine bay placement per AEC-Q101. |
| EAS | 22 mJ - Withstands single-pulse inductive energy from relay or motor coil de-energization. |
| dv/dt | 12 V/ns - Resists false turn-on during high-slew-rate transients in noisy automotive environments. |
Pinout & Package
Package: SO-8 surface-mount, thermally enhanced with exposed drain pad (pins 1–4 = G1/S1/G2/S2; pins 5–8 = D1/D1/D2/D2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Logic-level input controlling first N-MOSFET; requires no level-shifting for MCU GPIO. |
| 2 (S1) | Source of Channel 1 | Low-side return path for Channel 1; electrically isolated from S2 for dual independent loads. |
| 3 (G2) | Gate of Channel 2 | Independent gate input enabling asynchronous control of second load or half-bridge leg. |
| 4 (S2) | Source of Channel 2 | Separate source node allows floating or referenced biasing of Channel 2's load. |
| 5,6 (D1) | Drain of Channel 1 | Internally paralleled pins for low-inductance, high-current connection to power rail. |
| 7,8 (D2) | Drain of Channel 2 | Electrically isolated from D1; supports dual independent high-side or low-side switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two fully isolated MOSFETs in one SO-8 footprint reduce PCB area by ~40% vs. discrete pairs. |
| Logic-level gate drive | VGS(th) range (1.0–3.0 V) ensures reliable turn-on with 3.3 V microcontrollers without external drivers. |
| Repetitive avalanche rated | Rated for unlimited unclamped inductive switching events as long as Tj ≤ 175°C per Fig. 16b/c. |
| Automotive qualification | AEC-Q101 qualified with 100% production test coverage for HTOL, TC, UHAST, and ESD. |
| Thermal robustness | RθJA = 62.5°C/W on 1″² Cu board enables 2.4 W dissipation at 25°C ambient without forced cooling. |
Applications
| Engine Control Module (ECM) Solenoid Drive | Body Control Module (BCM) Lamp Dimming |
|---|---|
Use Scenario: Driving fuel injector or idle air control solenoids in closed-loop engine management systems. IC Role / Device Role / Timing Role: Low-side switch delivering precise 1–10 ms pulse-width modulated current pulses to inductive loads. Use Value: 130 mΩ RDS(on) minimizes I²R heating during sustained duty cycles; 175°C rating ensures reliability near hot exhaust manifolds. | Use Scenario: PWM dimming of LED headlamps and interior lighting via constant-current regulation. IC Role / Device Role / Timing Role: High-frequency (1–20 kHz) low-side switch enabling flicker-free brightness control. Use Value: 10 nC Qg and 2.3 ns fall time support clean edge transitions, reducing EMI and improving dimming linearity. |
| Transmission Control Unit (TCU) Valve Actuation | Advanced Driver Assistance Systems (ADAS) Camera Power Sequencing |
Use Scenario: Controlling hydraulic pressure valves in automatic transmission shift solenoids. IC Role / Device Role / Timing Role: Robust load switch handling repeated 5–15 A inrush currents during gear engagement. Use Value: Repetitive avalanche rating absorbs energy from valve coil back-EMF without snubber circuits, simplifying BOM. | Use Scenario: Controlled power-up/down sequencing of CMOS image sensors and ISP processors in rear-view cameras. IC Role / Device Role / Timing Role: Dual-channel soft-start switch enabling staggered rail enablement to limit inrush current. Use Value: Independent G1/S1 and G2/S2 terminals allow precise timing separation between sensor core and interface power domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF8AG | 60 V VDS, 2.2 mΩ RDS(on), 220 A ID, PowerFLAT 5x6 package | Higher current, lower RDS(on), but single-channel only and requires external gate drivers for dual control | Select when higher efficiency and thermal headroom are needed for >10 A loads; not drop-in compatible due to package and channel count. |
| ON Semiconductor NTMFS5C675NL | 60 V VDS, 5.2 mΩ RDS(on), SO-8 dual-N, but only AEC-Q100 qualified (not Q101) | Lacks full AEC-Q101 stress testing; lower thermal resistance (RθJA = 50°C/W) but unverified for under-hood 175°C operation | Acceptable for cabin-mounted modules where ambient temperature stays below 105°C; verify qualification scope before use in ECM/TCU. |
Compared with STL220N6LF8AG and NTMFS5C675NL, the AUIRF7103QTR uniquely combines AEC-Q101 certification, dual-channel SO-8 integration, and validated 175°C operation-making it optimal for space-constrained, high-reliability engine and transmission control nodes where qualification rigor and layout simplicity are critical.
Availability
AUIRF7103QTR is available at Aetrix Electronics and suitable for engine control modules, body control units, transmission control units, and ADAS camera power systems requiring stable component supply across extended automotive product lifecycles.
Supply support for AUIRF7103QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.
The AUIRF7103QTR belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in engine, transmission, and chassis control systems operating under harsh thermal and electrical conditions.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
Each channel supports 2.5 A continuous drain current at TA = 70°C and VGS = 4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under natural convection on standard FR4 PCBs with 1″² copper pour.
Does the AUIRF7103QTR require external gate resistors for automotive PWM operation?
No external gate resistor is required for basic PWM switching up to 20 kHz, given its 10 nC total gate charge and 6.0 Ω internal gate resistance. However, a 5–10 Ω series resistor is recommended to damp ringing and reduce EMI in high-di/dt applications such as solenoid driving.
Can both channels be used in parallel to increase current capacity?
Parallel operation is not recommended due to mismatch in RDS(on) (±20%) and gate threshold voltage (1.0–3.0 V), which causes unequal current sharing and thermal runaway. Use dedicated high-current single-die devices like the AUIRL3303 instead for >3 A loads.
Is the SO-8 package lead (pin) 5–8 electrically common between both channels?
No-pins 5 and 6 are internally connected to D1 (Channel 1 drain), while pins 7 and 8 connect to D2 (Channel 2 drain). These drain nodes are electrically isolated, enabling independent high-side or low-side configurations without shared power paths.
AUIRF7103QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 3A
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 255pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7103QTR FAQ
1.How can I place an order for AUIRF7103QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7103QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7103QTR reliable?
The price and inventory of AUIRF7103QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7103QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7103QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7103QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7103QTR?
AUIRF7103QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7103QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7103QTR?
For technical support, including AUIRF7103QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7103QTR requirements.
6.How does Aetrix verify that AUIRF7103QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7103QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7103QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7103QTR?
All AUIRF7103QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7103QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7103QTR part is unused and in its original packaging.
Return procedure for AUIRF7103QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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